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Applied Superconductivity

Coherent response of two nearly identical stacked Josephson junctions to mm wave irradiation

Ivan P. Nevirkovets

Published Jul 1, 1997• 3 citations
Publisher
DOI
10.1016/s0964-1807(98)00002-7

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We investigate the response of a stack of intrinsic Josephson junctions (IJJs) to terahertz (THz) electromagnetic (EM) irradiation. A significant amplification of the EM wave can be achieved by the IJJs stack when the incident frequency equals to one of the cavity frequencies. The irradiation excites $\ensuremath{\pi}$-phase kinks in the junctions, which stimulate the cavity resonance when the bias voltage is tuned. A large amount of dc energy is then pumped into the Josephson plasma oscillation and the incident wave gets amplified. From the profound current step in IVIVIV characteristics induced at the cavity resonance, the system can also be used for detection of the THz wave.
Single crystals of layered high-temperature superconductors intrinsically behave as stacks of Josephson junctions. We analyze response of current-biased stack of intrinsic junctions to irradiation by the external electromagnetic (em) wave. In addition to well-known Shapiro steps in the current-voltage characteristics, irradiation promotes stimulated radiation which adds with spontaneous Josephson radiation from the crystal. Such enhancement of radiation from current-biased crystal may be used for amplification of em waves. Irradiation also facilitates synchronization of Josephson oscillations in all intrinsic Josephson junctions of a single crystal as well as oscillations in intrinsic junctions of different crystals.
We propose a design for two-dimensional arrays of stacked Josephson junctions and study their properties as coherent sources of radiation in the mm and sub-mm wavelength range. This design can be implemented by using either mesas of intrinsic Josephson junctions, from crystals of high TC superconductors, or artificial stacks of low TC junctions. We outline a possible Nb/AlOx/Nb trilayer fabrication process for such devices. Our model for the dynamics of the system predicts the range of parameters over which the junctions synchronize.