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Japanese Journal of Applied Physics

Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-Well Structures

Atsushi Tackeuchi, Shunichi Muto, Tsuguo Inata, Toshio Fujii

Published Nov 1, 1991• 3 citations
Publisher

Abstract

We report the time evolution of excitonic absorption bleaching in resonant tunneling bi-quantum-well (TBQ) structures, in which the ground electron level in a narrow well has the same energy as the second electron level in a wide well. In resonant TBQ structure, we observed a reduction in the absorption recovery time and an increase in the tail-to-peak ratio of the absorption change. By comparing the absorption change of resonant TBQ with the e2-hh2 excitonic absorption change of conventional multiple quantum wells (MQW), we show that the increase in the tail-to-peak ratio of a resonant TBQ can be attributed to the thermally remaining holes in the first excited subband of heavy holes.

DOI
10.1143/jjap.30.2730

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We report the time evolution of excitonic absorption bleaching in resonant tunneling bi-quantum-well (TBQ) structures, in which the ground electron level in a narrow well has the same energy as the second electron level in a wide well. In resonant TBQ structure, we observed a reduction in the absorption recovery time and an increase in the tail-to-peak ratio of the absorption change. By comparing the absorption change of resonant TBQ with the e2-hh2 excitonic absorption change of conventional multiple quantum wells (MQW), we show that the increase in the tail-to-peak ratio of a resonant TBQ can be attributed to the thermally remaining holes in the first excited subband of heavy holes.
The optical Stark effect of excitons in semiconductors, where the exciton resonance is blue shifted by an off-resonance light beam, has been actively studied. Here we report on the observation of a very fast recovery of the exciton bleaching for an off-resonance excitation condition in a quantum well sample at room temperature. The good agreement between the experimental results and our numerical calculations of the time-resolved absorption spectra suggests a coherent transient population buildup and decay occurring on the time scale of the pump pulse.
I report on the effect of a moderate excess electron population on nonlinearities in modulation-doped CdTe quantum wells. I show that the electron population does not qualitatively affect the nature of correlations between excitons. In this respect, I bring strong evidence of the existence of unbound and bound (stable) two-exciton states in the presence of electrons and charged excitons (trions). In time-resolved pump and probe experiment, they lead to the observation of electromagnetically induced transparency and optical Stark shift of the exciton resonance. Rabi flopping of excitons within a sea of electrons is also clearly evidenced through ac Stark splitting and gain without inversion. The quantum coherence is more robust to electron induced dephasing than what would have been expected. I demonstrate third and higher-order exciton correlations in the presence of electrons, which manifest, for increasing exciton densities, through the blue-shift of counter-polarized exciton resonance, the red-shift of the biexciton resonance and the exciton to biexciton crossover. I also evidence correlated behavior of excitons and trions under excitation which manifests itself by crossed trion-exciton effects. I observe a wealth of phenomena encompassing bleaching, crossed bleaching, induced-absorption and energy shifts of the resonances. Significant differences are found between the nonlinear optical effects induced by an exciton and a trion population. Electron scattering with electron and exciton is shown to strongly broaden the high energy tail of exciton and trion resonance lineshapes. Variations of electron density result in a clear modification of both resonance lineshapes. The dynamics of the formation of trions is also studied. I propose a two-channel mechanism for their formation; they are formed through bi- and tri-molecular processes. This implies that both negatively and positively charged excitons coexist in a quantum well, even in the absence of excess carriers. The model is applied to a time-resolved photoluminescence experiment performed on a very high quality InGaAs quantum well sample, in which the photoluminescence contributions at the energy of the trion, exciton and at the band edge can be clearly separated and traced over a broad range of times and densities. The unresolved discrepancy between the theoretical and experimental radiative decay time of the exciton in a doped semiconductor is explained.
The bleaching of the n=1 and n=2 heavy-hole exciton absorption has been observed at room temperature in ternary alloy Al0.37Ga0.63As/AlAs multiple-quantum-well structures by nanoseconds pump-and-probe spectroscopy. The relative variation of the absorption coefficient [(−Δα)/α0] are about 15% and 8%, respectively. The nonlinear absorption coefficient (α2) and the nonlinear absorption cross section has been deduced. The value of the saturation density deduced from our spectra is in good agreement with the theoretical predictions. The influence of the staggered band alignment on the observed process is also discussed.
Recent studies of the transient behavior of absorption saturation in low temperature Multiple Quantum Wells (MQW) samples have revealed a surprisingly fast recovery of absorption (within 10 ps at 15 K) after excitation by intense ultrashort light pulses1. This has been attributed to the effect of the large stimulated recombination rate caused by amplified spontaneous luminescence guided along the MQW structure, as confirmed by streak camera observations of the edge-emitted luminescence1, and by measurements of time-resolved luminescence spectra with subpicosecond resolution2. This effect could be used to increase the speed of optical gates based on absorption saturation or carrier-induced nonlinear refraction, but a more complete understanding of the mechanisms involved is clearly needed in order to evaluate the interest of this approach.