Single photon detection technology is a frontier in the field of photon detection. As a newly developed technique, superconductor single photon detector (SSPD) has many attractive advantages such as wide response bandwidth, low noise, and fast speed. In this paper, we experimentally demonstrate a high performance SSPD with large system efficiency and low dark count rate at infrared wavelengths. The devices structure, fabrication process and system performance are presented in details. For our SSPD, we achieve a system efficiency of 60% at 1550 nm with a dark count rate of 100 cps. The time jitter and the maximum repetition rate are also measured to be 46 ps and 50 MHz respectively.
Single photon detection technology is a frontier in the field of photon detection. As a newly developed technique, superconductor single photon detector (SSPD) has many attractive advantages such as wide response bandwidth, low noise, and fast speed. In this paper, we experimentally demonstrate a high performance SSPD with large system efficiency and low dark count rate at infrared wavelengths. The devices structure, fabrication process and system performance are presented in details. For our SSPD, we achieve a system efficiency of 60% at 1550 nm with a dark count rate of 100 cps. The time jitter and the maximum repetition rate are also measured to be 46 ps and 50 MHz respectively.
Superconducting single-photon detector (SSPD) is a planar nanostructure patterned from 4-nm-thick NbN film deposited on sapphire substrate. The sensitive element of the SSPD is 100-nm-wide NbN strip. The device is operated at liquid helium temperature. Absorption of a photon leads to a local suppression of superconductivity producing subnanosecond-long voltage pulse. In infrared (at 1550 nm and longer wavelengths) SSPD outperforms avalanche photodiodes in terms of detection efficiency (DE), dark counts rate, maximum counting rate and timing jitter. Efficient single-mode fibre coupling of the SSPD enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. Recently we managed to improve the SSPD performance and measured 25% detection efficiency at 1550 nm wavelength and dark counts rate of 10 s-1. We also improved photon-number resolving SSPD (PNR-SSPD) which realizes a spatial multiplexing of incident photons enabling resolving of up to 4 simultaneously absorbed photons. Another improvement is the increase of the photon absorption using a λ/4 microcavity integrated with the SSPD. And finally in our strive to increase the DE at longer wavelengths we fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm and demonstrated that in middle infrared (about 3 μm wavelength) these devices have DE several times higher compared to the traditional SSPDs.
Superconducting single-photon detectors (SSPDs) are nanostructured devices made from ultrathin superconducting films. They are typically operated at liquid helium temperature and exhibit high detection efficiency, in combination with very low dark counts, fast response time, and extremely low timing jitter, within a broad wavelength range from ultraviolet to mid-infrared (up to 6mum). SSPDs are very attractive for applications such as fiber-based telecommunication, where single-photon sensitivity and high photon-counting rates are required. We review the current state-of-the-art in the SSPD research and development, and compare the SSPD performance to the best semiconducting avalanche photodiodes and other superconducting photon detectors. Furthermore, we demonstrate that SSPDs can also be successfully implemented in photon-energy-resolving experiments. Our approach is based on the fact that the size of the hotspot, a nonsuperconducting region generated upon photon absorption, is linearly dependent on the photon energy. We introduce a statistical method, where, by measuring the SSPD system detection efficiency at different bias currents, we are able to resolve the wavelength of the incident photons with a resolution of 50 nm.
We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography.
Superconducting single photons detectors (SSPDs) have emerged in recent years as a promising alternative for
fast and sensitive infrared detectors working in the photon counting mode. In particular, those detectors combine
very low dark count rates (below 1 Hz), high speed (above 1 GHz), photon number resolution and reasonable
quantum efficiency (10% at telecom wavelengths). They already found applications in quantum cryptography
systems and integrated circuit failure analysis, but could also be used as ultimate sensors in matrix configurations.
We show here the optimization of SSPD fabrication and their optical metrology at CEA. SSPD are fabricated
by patterning a 80 nm wide nanowire in a very thin (4 nm) NbN film on sapphire, forming a pixel of several
microns size. A cryogenic all-fibered optoelectronic system has been developed and allows precise metrology of
the optical performances of SSPD. When biasing near the critical current of the nanowire, we demonstrate a
detection quantum efficiency of 8% at 1.55 µm, which is also found to be strongly polarization dependent. This
quantum efficiency being limited by optical absorption, we propose a prism coupling based absorption enhancing
structure that allows reaching 100% quantum efficiency.
We present an overview of the state-of-the-art of NbN superconducting single-photon detectors (SSPDs). Our devices exhibit quantum efficiency (QE) of up to 30% in near-infrared wavelength and 0.4% at 5 mum, with a dark-count rate that can be as low as 10-4s-1. The SSPD structures integrated with lambda/4 microcavities achieve a QE of 60% at telecommunication, 1550-nm wavelength. We have also developed a new generation of SSPDs that possess the QE of large-active-area devices, but, simultaneously, are characterized by low kinetic inductance that allows achieving short response times and the GHz-counting rate with picosecond timing jitter. The improvements presented in the SSPD development, such as fiber-coupled SSPDs, make our detectors most attractive for high-speed quantum communications and quantum computing.
Single photon detection advanced rapidly in the last decade. The superconducting nanowire single-photon detector (SNSPD) is an emerging technology, which offers low dark count rates, broadband sensitivity from visible to mid-infrared wavelengths and very high quantum efficiency. All these features are appealing for future emerging applications in remote gas sensing, quantum key distribution and quantum information processing. By enclosing the detector in an optical cavity, tuned to the operating wavelength, the total system detection of the SNSPD is improved. Based on the cavity design, the detector absorption is boosted at the desired experimental wavelength. Devices have been fabricated and tested, in this thesis, with enhanced detection efficiency at near-infrared, infrared and mid-infrared wavelengths. NbTiN detectors fabricated on Ta2O5 / SiO2 distributed Bragg reflectors (DBR) for front-side coupling exhibit a system detection efficiency of ≈ 90% at λ = 940 nm for the best device measured. SNSPDs were also fabricated in NbTiN on metallic mirrors for back-side coupling for 1550 and 2333 nm experimental wavelengths. The first design exhibited a system detection efficiency of ≈ 84.5%, at λ = 1550 nm for the best device measured. The second exhibited low system detection efficiency since the device suffered from unexpectedly high dark count rate mainly due to blackbody radiation at 2.2 K. However, it was possible to measure the timing jitter of this device at 350 mK indicating a FWHM of 84 ps. Another technique to improve the total system detection efficiency of the SNSPD, is by fabricating a hairpin-shaped nanowire atop a single mode waveguide. In this design, photons travel through the waveguide and via evanescent coupling are absorbed in the nanowire. These SNSPD devices have been designed to thread along single mode Si ridge waveguides using a hairpin-shaped nanowire structure, which offers enhanced coupling and absorption efficiency via evanescent coupling. These ultra-thin superconducting MoSi detectors are precisely patterned on top of a single mode Si waveguide (600 nm) with alignment error less than 40 nm. Low temperature electrical and nano-optical characterization was carried out using a two-stage pulse tube (PT) coldhead, using an additional 4He / 3He sorption pump, low vibration characterization of SNSPD devices at 350 mK was carried out. Characterised devices exhibit low dark count rate <5 counts per second and timing jitter of ≈ 83 ps full width half maximum (FWHM) at wavelength (λ) = 1550 nm and at critical current ≈ 30 µA.