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Physical Review Letters

Multiphoton Plasma Production and Stimulated Recombination Radiation in Semiconductors

C. K. N. Patel, Paul A. Fleury, Richard E. Slusher, H. L. Frisch

Published May 30, 1966• 55 citations
Publisher
DOI
10.1103/physrevlett.16.971

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The theory of spontaneous emission in dielectric media is extended to take proper account of dispersion and local field corrections. For the case of spontaneous emission in a plasma or radiative electron-hole recombination in a semiconductor, there are effectively no local field corrections. A shift of emission lines due to a dispersive host medium is predicted and interpreted. The corrections to spontaneous and stimulated emission due to dielectric interfaces in microcavity lasers are discussed.
Stimulated radiative recombination has been demonstrated experimentally in and collisions using a merged electron - ion beams apparatus with field ionization detection of the excited neutral products. Enhancement of the recombination over spontaneous recombination to form the n=11, 12 and 13 levels of atomic hydrogen and the n = 11 and 12 levels of atomic helium by factors of between 1000 and 3000 have been found using a laser power of 8 W. Evidence for the resolution of fine-structure levels has been seen for the case of helium.