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Physical review. B, Condensed matter

Effects of trapped states on spectra of four-wave mixing and differential transmission

Eiichi Hanamura

Published Aug 15, 1992• 9 citations
Publisher

Abstract

Excitons are sometimes trapped at impurities in crystals and at defects on interfaces in the confined systems, such as quantum wells and microcrystallites embedded in a host matrix. We discuss these trapping effects on the third-order optical polarization under nearly resonant pumping of the exciton. First we predict an enhancement of ${\mathrm{\ensuremath{\chi}}}^{(3)}$(\ensuremath{\Omega};\ensuremath{\Omega},-\ensuremath{\Omega},\ensuremath{\Omega}) by a factor ${\mathrm{\ensuremath{\Gamma}}}_{\mathit{n}\ensuremath{\rightarrow}\mathit{T}}$/${\mathrm{\ensuremath{\Gamma}}}_{\mathit{T}\ensuremath{\rightarrow}\mathit{g}}$ multiplicatively on that enhanced by the large excitonic dipole moments. Here ${\mathrm{\ensuremath{\Gamma}}}_{\mathit{n}\ensuremath{\rightarrow}\mathit{T}}$ and ${\mathrm{\ensuremath{\Gamma}}}_{\mathit{T}\ensuremath{\rightarrow}\mathit{g}}$ are, respectively, the rate at which the exciton is trapped and the decay rate of the trapped electron into the ground state. In many cases, ${\mathrm{\ensuremath{\Gamma}}}_{\mathit{n}\ensuremath{\rightarrow}\mathit{T}}$ is much larger than ${\mathrm{\ensuremath{\Gamma}}}_{\mathit{T}\ensuremath{\rightarrow}\mathit{g}}$ so that a large enhancement of ${\mathrm{\ensuremath{\chi}}}^{(3)}$ is expected. Second, the four-wave mixing spectrum \ensuremath{\Vert}${\mathrm{\ensuremath{\chi}}}^{(3)}$(2${\mathrm{\ensuremath{\Omega}}}_{1}$-${\mathrm{\ensuremath{\Omega}}}_{2}$;${\mathrm{\ensuremath{\Omega}}}_{1}$,-${\mathrm{\ensuremath{\Omega}}}_{2}$,${\mathrm{\ensuremath{\Omega}}}_{1}$)\ensuremath{\Vert} under two beams ${\mathrm{\ensuremath{\Omega}}}_{1}$ and ${\mathrm{\ensuremath{\Omega}}}_{2}$ is shown to consist of three hierarchical structures as a function of ${\mathrm{\ensuremath{\Omega}}}_{1}$-${\mathrm{\ensuremath{\Omega}}}_{2}$, i.e., the sharpest spike around ${\mathrm{\ensuremath{\Omega}}}_{1}$-${\mathrm{\ensuremath{\Omega}}}_{2}$=0 with the linewidth \ensuremath{\Vert}${\mathrm{\ensuremath{\Omega}}}_{1}$-${\mathrm{\ensuremath{\Omega}}}_{2}$\ensuremath{\Vert}=${\mathrm{\ensuremath{\Gamma}}}_{\mathit{T}\ensuremath{\rightarrow}\mathit{g}}$, the steep shoulder with the center also at ${\mathrm{\ensuremath{\Omega}}}_{1}$-${\mathrm{\ensuremath{\Omega}}}_{2}$=0 and the width ${\mathrm{\ensuremath{\Gamma}}}_{\mathit{n}}$ (the exciton decay rate), and the wide structure with the width ${\mathrm{\ensuremath{\Gamma}}}_{\mathit{n}\mathit{g}}$ around ${\mathrm{\ensuremath{\Omega}}}_{1}$=${\mathrm{\ensuremath{\omega}}}_{1\mathit{s}}$ and ${\mathrm{\ensuremath{\Omega}}}_{2}$=${\mathrm{\ensuremath{\omega}}}_{1\mathit{s}}$. Here ${\mathrm{\ensuremath{\Gamma}}}_{\mathit{n}\mathit{g}}$ is the relaxation rate of the exciton polarization and \ensuremath{\Elzxh}${\mathrm{\ensuremath{\omega}}}_{1\mathit{s}}$ the lowest exciton energy. Third, the differential transmission spectrum is found to show the strong absorption saturation peak or the sharp induced absorption dip as a function of pump-probe detuning ${\mathrm{\ensuremath{\Omega}}}_{2}$-${\mathrm{\ensuremath{\Omega}}}_{1}$, depending upon the pump frequency ${\mathrm{\ensuremath{\Omega}}}_{1}$ relative to the exciton peak ${\mathrm{\ensuremath{\omega}}}_{1\mathit{s}}$.

DOI
10.1103/physrevb.46.4718

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Excitons are sometimes trapped at impurities in crystals and at defects on interfaces in the confined systems, such as quantum wells and microcrystallites embedded in a host matrix. We discuss these trapping effects on the third-order optical polarization under nearly resonant pumping of the exciton. First we predict an enhancement of \ensuremathχ(3){\mathrm{\ensuremath{\chi}}}^{(3)}\ensuremathχ(3)(\ensuremath{\Omega};\ensuremath{\Omega},-\ensuremath{\Omega},\ensuremath{\Omega}) by a factor \ensuremathΓn\ensuremath→T{\mathrm{\ensuremath{\Gamma}}}_{\mathit{n}\ensuremath{\rightarrow}\mathit{T}}\ensuremathΓn\ensuremath→T​/\ensuremathΓT\ensuremath→g{\mathrm{\ensuremath{\Gamma}}}_{\mathit{T}\ensuremath{\rightarrow}\mathit{g}}\ensuremathΓT\ensuremath→g​ multiplicatively on that enhanced by the large excitonic dipole moments. Here \ensuremathΓn\ensuremath→T{\mathrm{\ensuremath{\Gamma}}}_{\mathit{n}\ensuremath{\rightarrow}\mathit{T}}\ensuremathΓn\ensuremath→T​ and \ensuremathΓT\ensuremath→g{\mathrm{\ensuremath{\Gamma}}}_{\mathit{T}\ensuremath{\rightarrow}\mathit{g}}\ensuremathΓT\ensuremath→g​ are, respectively, the rate at which the exciton is trapped and the decay rate of the trapped electron into the ground state. In many cases, \ensuremathΓn\ensuremath→T{\mathrm{\ensuremath{\Gamma}}}_{\mathit{n}\ensuremath{\rightarrow}\mathit{T}}\ensuremathΓn\ensuremath→T​ is much larger than \ensuremathΓT\ensuremath→g{\mathrm{\ensuremath{\Gamma}}}_{\mathit{T}\ensuremath{\rightarrow}\mathit{g}}\ensuremathΓT\ensuremath→g​ so that a large enhancement of \ensuremathχ(3){\mathrm{\ensuremath{\chi}}}^{(3)}\ensuremathχ(3) is expected. Second, the four-wave mixing spectrum \ensuremath{\Vert}\ensuremathχ(3){\mathrm{\ensuremath{\chi}}}^{(3)}\ensuremathχ(3)(2\ensuremathΩ1{\mathrm{\ensuremath{\Omega}}}_{1}\ensuremathΩ1​-\ensuremathΩ2{\mathrm{\ensuremath{\Omega}}}_{2}\ensuremathΩ2​;\ensuremathΩ1{\mathrm{\ensuremath{\Omega}}}_{1}\ensuremathΩ1​,-\ensuremathΩ2{\mathrm{\ensuremath{\Omega}}}_{2}\ensuremathΩ2​,\ensuremathΩ1{\mathrm{\ensuremath{\Omega}}}_{1}\ensuremathΩ1​)\ensuremath{\Vert} under two beams \ensuremathΩ1{\mathrm{\ensuremath{\Omega}}}_{1}\ensuremathΩ1​ and \ensuremathΩ2{\mathrm{\ensuremath{\Omega}}}_{2}\ensuremathΩ2​ is shown to consist of three hierarchical structures as a function of \ensuremathΩ1{\mathrm{\ensuremath{\Omega}}}_{1}\ensuremathΩ1​-\ensuremathΩ2{\mathrm{\ensuremath{\Omega}}}_{2}\ensuremathΩ2​, i.e., the sharpest spike around \ensuremathΩ1{\mathrm{\ensuremath{\Omega}}}_{1}\ensuremathΩ1​-\ensuremathΩ2{\mathrm{\ensuremath{\Omega}}}_{2}\ensuremathΩ2​=0 with the linewidth \ensuremath{\Vert}\ensuremathΩ1{\mathrm{\ensuremath{\Omega}}}_{1}\ensuremathΩ1​-\ensuremathΩ2{\mathrm{\ensuremath{\Omega}}}_{2}\ensuremathΩ2​\ensuremath{\Vert}=\ensuremathΓT\ensuremath→g{\mathrm{\ensuremath{\Gamma}}}_{\mathit{T}\ensuremath{\rightarrow}\mathit{g}}\ensuremathΓT\ensuremath→g​, the steep shoulder with the center also at \ensuremathΩ1{\mathrm{\ensuremath{\Omega}}}_{1}\ensuremathΩ1​-\ensuremathΩ2{\mathrm{\ensuremath{\Omega}}}_{2}\ensuremathΩ2​=0 and the width \ensuremathΓn{\mathrm{\ensuremath{\Gamma}}}_{\mathit{n}}\ensuremathΓn​ (the exciton decay rate), and the wide structure with the width \ensuremathΓng{\mathrm{\ensuremath{\Gamma}}}_{\mathit{n}\mathit{g}}\ensuremathΓng​ around \ensuremathΩ1{\mathrm{\ensuremath{\Omega}}}_{1}\ensuremathΩ1​=\ensuremathω1s{\mathrm{\ensuremath{\omega}}}_{1\mathit{s}}\ensuremathω1s​ and \ensuremathΩ2{\mathrm{\ensuremath{\Omega}}}_{2}\ensuremathΩ2​=\ensuremathω1s{\mathrm{\ensuremath{\omega}}}_{1\mathit{s}}\ensuremathω1s​. Here \ensuremathΓng{\mathrm{\ensuremath{\Gamma}}}_{\mathit{n}\mathit{g}}\ensuremathΓng​ is the relaxation rate of the exciton polarization and \ensuremath{\Elzxh}\ensuremathω1s{\mathrm{\ensuremath{\omega}}}_{1\mathit{s}}\ensuremathω1s​ the lowest exciton energy. Third, the differential transmission spectrum is found to show the strong absorption saturation peak or the sharp induced absorption dip as a function of pump-probe detuning \ensuremathΩ2{\mathrm{\ensuremath{\Omega}}}_{2}\ensuremathΩ2​-\ensuremathΩ1{\mathrm{\ensuremath{\Omega}}}_{1}\ensuremathΩ1​, depending upon the pump frequency \ensuremathΩ1{\mathrm{\ensuremath{\Omega}}}_{1}\ensuremathΩ1​ relative to the exciton peak \ensuremathω1s{\mathrm{\ensuremath{\omega}}}_{1\mathit{s}}\ensuremathω1s​.
We want to make the best use of the mesoscopic or macroscopic transition dipolemornent of excitons by controling the size and dimension of the materials. First, the semiconductor microcrystallites embedded in insulators or glasses are shown to have the mesoscopic transition dipolemoment of excitons1 . As a result, the exciton in CuC1 microcrystallite with the radius 80 A superradiatively decays in 100 pico-second2. Futhermore, the exciton-exciton interaction and the decay and relaxation of the exciton work effectively in deviating the excitons in the microcrystallite from ideal bosons and this system shows the large third-order optical susceptibility"3 of an order of iO esu when we assume the 0.1% packing of the CuC1 microcrystallites. These predictions have been confirmed expriment ally4'5. Second, the two-dimensional excitons in quantum wells can superradiatively decay in the direction perpendicular to the surfaces2 . This brings about the quick response and the deviation of the excitons from ideal bosons at the same time. The latter effect as well as the two-dimensional macroscopic enhancement of the exction transition dipolemoment enhance the third-order optical susceptibility3. Both the superradiative decay rate and increase as does the coherent length, which is inversely proportional to the square root of the exciton line width6.
The coherent response of excitons in semiconductor nanostructures measured in four-wave mixing (FWM) depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs/Al0.3Ga0.7As single quantum wells (SQW) and AlxGa1-xAs mixed crystals. Additional to the usual phase-space filling nonlinearity, excitation-induced dephasing (EID) and biexciton formation (BIF) are important. EID leads to a strong dependence of the signal on the angle between the linear input polarizations. We find that EID persists in inhomogeneous systems, showing that the mutual density-dependent dephasing rate difference between two subsystems within the inhomogeneous distribution is strongly dependent on their energy difference. BIF is strongly affecting the cross-linear polarized FWM response. The signal for positive delay is dominated by the transitions from the one-exciton state X to the two-exciton states. Here, the third-order polarization at X-XX is not at the same resonance as the first-order polarization at 0-X. Consequently, the rephasing of the microscopic third-order polarization to the macroscopic FWM photon echo is blurred by the non-perfect correlation of X and XX energies, leading to a fast and non-exponential signal decay in delay time. For inhomogeneous broadenings larger than the biexciton binding energy, we find an enhanced biexciton binding energy, and a quenching of the oscillator strength of the unbound biexciton.
We report on the results of optical-pumping experiments in GaP doped with the isoelectronic impurity nitrogen. In the first experiment we have measured the saturation of absorption at the AAA bound exciton as a function of pump intensity, using as the pump a pulsed dye laser tuned to the AAA line. The observed saturation behavior is in quantitative accord with a simple three-level system involving the AAA and BBB bound-exciton level and the N ground state. The second experiment involves measuring the absorption at the AAA line with a weak probe (a tunable dye laser) while the crystal is being pumped with an intense pump dye laser tuned above the indirect gap. In this case also the absorption saturates with increasing pump power and we can infer approximately 10% efficiency for the capture of excitons at N impurities. In this second experiment, a simple model predicts an amplification by a factor of 8.5 but none is observed. We conclude from these measurements that, when pumped above the indirect gap, the dominant excited state of N impurities in our crystal is a single electron trapped at N. We believe that this is caused by the presence of other impurities in the crystal and is not an intrinsic limitation of the system.
We want to make the best use of the mesoscopic or macroscopic transition dipolemornent of excitons by controling the size and dimension of the materials. First, the semiconductor microcrystallites embedded in insulators or glasses are shown to have the mesoscopic transition dipolemoment of excitons1 . As a result, the exciton in CuC1 microcrystallite with the radius 80 A superradiatively decays in 100 pico-second2. Futhermore, the exciton-exciton interaction and the decay and relaxation of the exciton work effectively in deviating the excitons in the microcrystallite from ideal bosons and this system shows the large third-order optical susceptibility3 of an order of iO esu when we assume the 0.1% packing of the CuC1 microcrystallites. These predictions have been confirmed expriment ally4'5. Second, the two-dimensional excitons in quantum wells can superradiatively decay in the direction perpendicular to the surfaces2 . This brings about the quick response and the deviation of the excitons from ideal bosons at the same time. The latter effect as well as the two-dimensional macroscopic enhancement of the exction transition dipolemoment enhance the third-order optical susceptibility3. Both the superradiative decay rate and increase as does the coherent length, which is inversely proportional to the square root of the exciton line width6.© (1990) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
The study of the nonlinear optical response of excitons in semiconductors is important for both scientific and technological applications. Although the nonlinear optical properties of bulk semiconductors and heterostructures have been studied for almost three decades, with most of the research focusing on heterostructures, the mechanisms leading to the nonlinearities in these systems are not completely understood. Determining these mechanisms and developing a theoretical picture which describes the most dominant effects remains a challenge and an active area of study. Although optical interactions in semiconductors is a genuine many-body problem, a description of this system similar to the optical Bloch equations used in atomic studies has shown some success, but more work is needed to make this model complete. Experimental work, particularly in the bulk system uncomplicated by the interface disorder present in heterostructures, will provide the guidance to extend this formalism. In this dissertation, the frequency domain resonant nonlinear optical response of excitons in bulk gallium arsenide at low density is studied to gain insight into the dominant mechanisms leading to the response, as well as the dynamics of the nominally three-dimensional excitonic system. Specifically, the nonlinear response was probed with differential transmission (DT) and four-wave mixing (FWM) experiments, which measure to lowest order the third-order susceptibility, $\chi\sp{(3)}.$ Using these various tools, three specific areas were studied and the results will be presented. First, the role of the biexciton, the state of two bound excitons, in determining the bulk nonlinear response was explored. The observation of a red-shifted nonlinear resonance suggests the importance of this state at moderate densities. Second, a new response, characterized by a resonant increase in exciton absorption induced by optical pumping with initial superlinear growth and a transition to behavior described by simple line broadening with increased pump intensity, was studied in detail. A model considering increased polariton absorption with increased exciton-exciton interactions explains these effects. Finally, nonlinear optical spectroscopy was used to study exciton transport, where near-ballistic behavior was revealed. The effect of exciton transport, thermalization and radiative recombination on the nonlinear optical response was explored.