We have observed in natural diamond samples single-photon emission from individual colour centres based on Nickel-Nitrogen impurities. We report a detailed study of the photophysical properties of these single emitters, measured under CW excitation.
We report on the observation of optically active colour centres based on Nickel-Nitrogen impurities in natural diamond samples. These emitters can efficiently generate single photons in the near infrared. Their photoluminescence is perfectly stable at room temperature and has several striking features, such as a narrow band emission around 780 nm and a short photon emission lifetime around 2 ns. We present a detailed study of their photophysical properties measured under continuous-wave excitation.
Single-photon sources are a fundamental element for developing quantum technologies, and sources based on colour centres in diamonds are among the most promising candidates. The well-known nitrogen vacancy centres are characterized by several limitations, and thus few other defects have recently been considered. In the present work, we characterize, in detail, native efficient single colour centres emitting in the near infra-red ( λ = 740–780 nm) in both standard IIa single-crystal and electronic-grade polycrystalline commercial chemical vapour deposited (CVD) diamond samples. In the former case, a high-temperature ( T > 1000 °C) annealing process in vacuum is necessary to induce the formation/activation of luminescent centres with good emission properties, while in the latter case the annealing process has marginally beneficial effects on the number and performance of native centres in commercially available samples. Although displaying significant variability in several photo-physical properties (emission wavelength, emission rate instabilities, saturation behaviours), these centres generally display appealing photophysical properties for applications as single photon sources: short lifetimes (0.7–3 ns), high emission rates (∼50–500 × 10 3 photons s −1 ) and strongly (>95%) polarized light. The native centres are tentatively attributed to impurities incorporated in the diamond crystal during the CVD growth of high-quality type-IIa samples, and offer promising perspectives in diamond-based photonics.
Quantum communication and quantum metrology established a demand for an accessible solid state systems which can generate a stream of single photons on demand [1]. Although single photon emission has been demonstrated from quantum dots (QD)[1,2], single molecules [3] and nanowires [4], their practical operation is limited by the temperature or photostability. Diamond crystals, however, are the most promising platform for generation of robust, photo-stable, single photons at room temperature [5,6]. Nevertheless, out of more than 500 existing optical centers in diamond only three known centers demonstrated a clear single photon emission: the nitrogen-vacancy complex [6,7], the silicon-vacancy complex [8] and the nickel-nitrogen complex [9,10]. Recent progress in materials science and fabrication techniques of diamond color centers unveiled novel quantum emitters with photo-physical properties surpassing the current mainstream [11,12,13]. Consequently, the versatility of the diamond lattice to host various impurities which give luminescence signals lead to a dramatic discovery of ultra bright single photon emitters operating in the MHz regime [14]. These new centers, comparable with QD in terms of brightness [1], but have the tremendous advantage of their room temperature operation and photo-stability. Furthermore, it opened a new avenue to investigate essentially an unknown group of single photon emitters. A brief description of the fabrication methods and a detailed quantum optical characterization of this class of diamond emitters is the subject of this presentation. In particular we will present the photo-physical properties of a novel family of single photon emitters, most likely originated from Cr impurities within the chemical vapor deposition grown nano-diamond crystals. We concentrate on the typical emission lines in the range of 740 - 790 nm, which exhibit single photon emission with count rate in the range of 0.8-3.2 106 counts/s at the limit of infinite optical excitation power, and life time as short as 1 ns. Even more, some of the emitters exhibit a photon statistics without any photon bunching, indicating a two-level system with unitary quantum efficiency. We will also show preliminary results of a resonant excitation at 4 K. We will highlight future directions to optimize these sources and avenues to investigate the fundamental properties of these centers.
We present a detailed study of photophysical properties of single color centers in natural diamond samples emitting in the near infrared under optical excitation. Photoluminescence of these single emitters has several striking features, including narrow-band (FWHM 2 nm) fully polarized emission around 780 nm, a short excited-state lifetime of about 2 ns, and perfect photostability at room temperature under our excitation conditions. Development of a triggered single-photon source relying on this single color center is discussed for application to quantum key distribution.
A huge variety of optical colour centres can be found in diamond, emitting in its whole wide transparency range. Although several of these centres have been demonstrated as single-photon emitters, none of them meets all of the requirements of an ideal single-photon source. In this view, we discuss the properties of prominent optical centres, such as the nitrogen vacancy, the silicon vacancy or the so-called NE8 centre, as well as recently found centres ascribed to defects containing Ni, Si, Cr and Xe. Besides suitable intrinsic properties, it is necessary for practical applications that optical centres can be created artificially on demand. Of all known methods, only ion implantation allows for the most controlled creation of such defect centres. In this paper, we discuss how nanoscalability, that is, the nanometre placement and the deterministic creation of optical centres, can, could or cannot be achieved by the available ion implantation techniques. A fine analysis of individual optical centres is now possible, thanks to the recently developed subdiffraction optical microscopy methods.