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Physical review. B, Condensed matter

Persistent and transient spectral hole burning in Pr3+ - and Eu3+ -doped silicate glasses

Thomas Schmidt, R. M. Macfarlane, Silvia Volker

Published Dec 1, 1994• 57 citations
Publisher

Abstract

Persistent and time-resolved transient holes were burnt into the $^{1}\mathrm{D}_{2}$${\ensuremath{\leftarrow}}^{3}$${\mathrm{H}}_{4}$ transition of ${\mathrm{Pr}}^{3+}$ and the $^{5}\mathrm{D}_{0}$${\ensuremath{\leftarrow}}^{7}$${\mathrm{F}}_{0}$ transition of ${\mathrm{Eu}}^{3+}$ in silicate glasses. The holewidths were studied as a function of burning-fluence density, wavelength, and temperature between 0.4 and 12 K. Transient holes arising from optical pumping of ground-state nuclear hyperfine levels were found for both ions at T3 K. Their lifetime decreases with increasing temperature. They are accompanied by symmetrically placed antiholes. For ${\mathrm{Eu}}^{3+}$, two pairs of antiholes were found which are attributed to the two europium isotopes, $^{151}\mathrm{Eu}$ and $^{153}\mathrm{Eu}$. For ${\mathrm{Pr}}^{3+}$, an additional mechanism leading to persistent hole burning dominates above 3 K. The holewidth follows a ${\mathit{T}}^{(1.3\ifmmode\pm\else\textpm\fi{}0.1)}$ dependence for ${\mathrm{Pr}}^{3+}$ and a ${\mathit{T}}^{(1.0\ifmmode\pm\else\textpm\fi{}0.1)}$ dependence for ${\mathrm{Eu}}^{3+}$. The temperature dependence is the same as that of the contribution of the two-level systems to the specific heat measured on the same samples and in the same temperature range. The quadrupole splittings of the $^{7}\mathrm{F}_{0}$ ground state and the crystal-field splittings of the $^{7}\mathrm{F}_{1}$ and $^{7}\mathrm{F}_{2}$ levels of ${\mathrm{Eu}}^{3+}$ as a function of excitation wavelength indicate that the strength of the noncubic component of the crystal field varies monotonically for excitation across the $^{5}\mathrm{D}_{0}$${\ensuremath{\leftarrow}}^{7}$${\mathrm{F}}_{0}$ absorption band, falling to zero at the long-wavelength edge. The hole width shows a similar variation with excitation frequency. No influence of the experimental time scale on the hole width was detected for either sample between ${10}^{\mathrm{\ensuremath{-}}2}$ and ${10}^{2}$ s.

DOI
10.1103/physrevb.50.15707

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Persistent and time-resolved transient holes were burnt into the ^{1}\mathrm{D}_{2}$${\ensuremath{\leftarrow}}^{3}$${\mathrm{H}}_{4} transition of Pr3+{\mathrm{Pr}}^{3+}Pr3+ and the ^{5}\mathrm{D}_{0}$${\ensuremath{\leftarrow}}^{7}$${\mathrm{F}}_{0} transition of Eu3+{\mathrm{Eu}}^{3+}Eu3+ in silicate glasses. The holewidths were studied as a function of burning-fluence density, wavelength, and temperature between 0.4 and 12 K. Transient holes arising from optical pumping of ground-state nuclear hyperfine levels were found for both ions at T3 K. Their lifetime decreases with increasing temperature. They are accompanied by symmetrically placed antiholes. For Eu3+{\mathrm{Eu}}^{3+}Eu3+, two pairs of antiholes were found which are attributed to the two europium isotopes, 151Eu^{151}\mathrm{Eu}151Eu and 153Eu^{153}\mathrm{Eu}153Eu. For Pr3+{\mathrm{Pr}}^{3+}Pr3+, an additional mechanism leading to persistent hole burning dominates above 3 K. The holewidth follows a T(1.3\ifmmode±\else\textpm\fi0.1){\mathit{T}}^{(1.3\ifmmode\pm\else\textpm\fi{}0.1)}T(1.3\ifmmode±\else\textpm\fi0.1) dependence for Pr3+{\mathrm{Pr}}^{3+}Pr3+ and a T(1.0\ifmmode±\else\textpm\fi0.1){\mathit{T}}^{(1.0\ifmmode\pm\else\textpm\fi{}0.1)}T(1.0\ifmmode±\else\textpm\fi0.1) dependence for Eu3+{\mathrm{Eu}}^{3+}Eu3+. The temperature dependence is the same as that of the contribution of the two-level systems to the specific heat measured on the same samples and in the same temperature range. The quadrupole splittings of the 7F0^{7}\mathrm{F}_{0}7F0​ ground state and the crystal-field splittings of the 7F1^{7}\mathrm{F}_{1}7F1​ and 7F2^{7}\mathrm{F}_{2}7F2​ levels of Eu3+{\mathrm{Eu}}^{3+}Eu3+ as a function of excitation wavelength indicate that the strength of the noncubic component of the crystal field varies monotonically for excitation across the ^{5}\mathrm{D}_{0}$${\ensuremath{\leftarrow}}^{7}$${\mathrm{F}}_{0} absorption band, falling to zero at the long-wavelength edge. The hole width shows a similar variation with excitation frequency. No influence of the experimental time scale on the hole width was detected for either sample between 10\ensuremath−2{10}^{\mathrm{\ensuremath{-}}2}10\ensuremath−2 and 102{10}^{2}102 s.
We report what is, to the best of our knowledge, the first observation of transient spectral hole burning in erbium-doped fluorozirconate glass around 1.53 μm. Holes deeper than 12% were burnt. A study of the hole width as a function of power density, wavelength, temperature, and erbium concentration has been performed and underlines the role of spectral diffusion. Dynamics of refilling of the holes, involving optical pumping of the long-lived 4I13/2 excited state, was also investigated. The nearly linear temperature dependence of the hole width behaves as reported for other rare-earth ions and is interpreted within the framework of the two-level systems theory. Hole-refilling dynamics has been studied for three different erbium concentrations and is used to interpret the origin of the saturation.
Spectral hole burning on the $4{f}^{7}(^{8}S_{\frac{7}{2}})\ensuremath{\rightarrow}4{f}^{6}5d$ transition of Eu2+{\mathrm{Eu}}^{2+}Eu2+ is observed to occur by two mechanisms in CaF2{\mathrm{F}}_{2}F2​:Eu2+{\mathrm{Eu}}^{2+}Eu2+. At zero magnetic field, persistent spectral hole burning occurs by two-step photoionization where the hole burning survives cycling to room temperature. The observed hole spectrum is compared with a calculation which considers the small Eu2+{\mathrm{Eu}}^{2+}Eu2+ ground-state splitting and both the ground- and excited-state hyperfine interactions. In a magnetic field above 1 T, transient spectral hole burning occurs by population redistribution among the ground-state hyperfine levels. Long-lived (minutes) holes are observed for a half integral spin system. The resulting hole spectrum consists of holes, antiholes, and a nuclear spin-flip sideband and can be explained from the hyperfine interactions in the ground and excited states. The dominant hole decay occurs by phonon-induced transitions among hyperfine levels of the ${M}_{S}=\ensuremath{-}\frac{7}{2}$ and ${M}_{S}=\ensuremath{-}\frac{5}{2}$ electron-spin sublevels. Central hole linewidths of 200 MHz are observed at zero magnetic field. Hole linewidths at high magnetic fields are as narrow as 40 MHz but these are inhomogenously broadened by superhyperfine interactions with the FFF nuclear spins. Estimates of hole-burning quantum efficiency are also obtained.
Laser induced hole burning in optical absorption bands of low temperature solids has been investigated with emphasis on mechanisms for population hole burning, the interactions with the environment which limit the hole widths and the use of hole burning for ultra high resolution spectroscopy. Hole burning was observed in a wide range of solids including organic and organometallic molecules in crystals and rare earth ions in crystals and glasses. The mechanisms for hole burning also varied widely and a new mechanism involving optically induced nuclear spin flips of near neighbor nuclei was discovered. Examples of hole burning in new classes of materials are presented here for the first time, namely inorganic glasses (silicate glasses containing Nd(3+), Pr(3+) or Eu(3+)) and undoped stoichiometric compounds (e.g., EuP5O14). Hole recovery was used to determine nuclear spin lattice relaxation rates in praseodymium doped crystals. For allowed optical transitions (e.g., singlet states of zinc porphyrin, dibromoindigo and color centers in alkali halides) the hole widths at 2K are limited by population decay to approximately 50 MHz. For longer lived optical levels in crystalline materials, e.g., those containing rare earth ions, the hole widths are narrower (less than 10 MHz) and are limited by dynamical interactions with surrounding nuclei. In amorphous materials such as europium doped silicate glass, hole widths are much broader, being limited by low frequency tunneling motions. Hole burning measurements were complemented by time domain coherent transient (photon echo, and optical free decay) measurements of homogeneous linewidths which enabled us to measure optical resonances as narrow as 760 Hz in Eu(3+):Y2O3.
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Persistent spectral hole burning (PSHB) in the ${}^{7}{F}_{0}{\ensuremath{-}}^{5}{D}_{0}$ transition and the electron excitation in the ${}^{7}{F}_{0}\ensuremath{-}4f5d$ transition of Sm2+{\mathrm{Sm}}^{2+}Sm2+ doped in ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}{\ensuremath{-}\mathrm{S}\mathrm{i}\mathrm{O}}_{2}$ glasses were studied from the measurements of hole burning efficiency and the refilling of the burnt hole. The PSHB at low temperature is attributed to the optically activated rearrangement of OH bonds surrounding Sm2+{\mathrm{Sm}}^{2+}Sm2+ ions. On the other hand, the PSHB at high temperature is attributed to one-step electron tunneling in the excitation state. The barrier heights for hole filling corresponding to the two mechanisms were determined to be \ensuremath{\sim}0.27 and \ensuremath{\sim}0.90 eV, respectively. Thermal depth of the trap that captures electrons by two-step ionization via the 4f5d4f5d4f5d state was determined to be \ensuremath{\sim}0.35 eV below the conduction band. A model was proposed for describing the PSHB and electron excitation of Sm2+{\mathrm{Sm}}^{2+}Sm2+ doped in ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}{\ensuremath{-}\mathrm{S}\mathrm{i}\mathrm{O}}_{2}$ glasses. In addition, the dependence of hole burning efficiency on the Al2O3{\mathrm{Al}}_{2}{\mathrm{O}}_{3}Al2​O3​ concentration, temperature, and burning wavelength was also studied.
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