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Journal of Physics D Applied Physics

First-order free induction decay in narrow direct-gap semiconductors

Pratima Sen, Kanta Singh, Pratima Sen

Published Dec 14, 1990• 4 citations
Publisher

Abstract

Using the time-dependent perturbation treatment of the density matrix, the authors report the occurrence of first-order free induction decay (FID) in narrow direct-gap semiconductors. The analysis deals with the interaction of a near resonant, ultrashort, moderate power laser pulse with the bulk semiconductor sample. Numerical estimates have been made for intrinsic InSb of micrometre size at 77 K irradiated by a frequency doubled 10.6 mu m CO 2 laser with pulse duration in the picosecond domain. The results reveal oscillations, around the background values, in the decay profiles of both the refractive index as well as the absorption coefficient. The transient transmitted intensity has been found to decay in a time comparable to the inhomogeneous Doppler broadening time, which is much shorter that the dephasing time. The analytical behaviour reported here is in very good agreement with the experimental observations of first-order FID in the atomic caesium vapour systems.

DOI
10.1088/0022-3727/23/12/019

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Using the time-dependent perturbation treatment of the density matrix, the authors report the occurrence of first-order free induction decay (FID) in narrow direct-gap semiconductors. The analysis deals with the interaction of a near resonant, ultrashort, moderate power laser pulse with the bulk semiconductor sample. Numerical estimates have been made for intrinsic InSb of micrometre size at 77 K irradiated by a frequency doubled 10.6 mu m CO 2 laser with pulse duration in the picosecond domain. The results reveal oscillations, around the background values, in the decay profiles of both the refractive index as well as the absorption coefficient. The transient transmitted intensity has been found to decay in a time comparable to the inhomogeneous Doppler broadening time, which is much shorter that the dephasing time. The analytical behaviour reported here is in very good agreement with the experimental observations of first-order FID in the atomic caesium vapour systems.
Using the density matrix approach, the effect of magnetic field on optical nutation and free induction decay (FID) has been investigated analytically in direct gap semiconductors. The numerical estimations made for a thin sample of bulk InSb duly irradiated by a Lead salt (PbEuSeTe) diode laser exhibit an enhancement in the beat signal intensity of the nutating output at large magnetic fields. The numerical analysis of free induction decay in InSb crystal–laser interacting system yield the results that both the decay time as well as transmitted field amplitude increase with increasing magnetic field.
A novel form of laser frequency switching is devised that extends coherent optical transient studies to a 100-picosecond time scale, the measurements being performed in real time. Free-induction decay (FID) on a subnanosecond time scale reveals new features, such as a first-order FID that dephases with the inhomogeneous dephasing time T2* and interferes with the well-known nonlinear FID. A complete analytical expression for optical FID is derived and supports our FID observations for the sodium D1transition.
Based upon the time-dependent perturbation treatment of coherent radiation-semiconductor resonant interaction, the effect of an externally applied magnetic field on pulse propagation in bulk III-V semiconductors has been investigated analytically. Numerical estimations are made for a sample of InSb crystal duly irradiated by ultrafast infrared dye laser operating in the 3.9–9.4 μm wavelength range. The transmitted intensity profiles manifest the occurrence of pulse chirping and spectral broadening of the input pulse while propagating through the semiconducting crystal under the nonlinear dispersion regime. Although the mechanisms are different, similar characteristics were observed experimentally in atomic rubidium vapour in the presence of a strong magnetic field.
Based upon the time dependent perturbation theory for coherent radiation-semiconductor interaction, the possibility of occurrence of the phenomenon of two-pulse photon echo has been investigated analytically in a bulk direct-gap semiconductor under near resonant transition regime below the absorption edge of the crystal. The excitation intensity is chosen to be in the low-to-moderate power regime such that the photoinduced electron-hole pair density remains below the Mott transition limit and the weakly bound Wannier-Mott excitonic structure of the crystal absorption edge is manifested. The band gap renormalization effect is also taken into account. Numerical estimation of the transmitted intensity has been made for electron-hole transition to the 1s excitonic states in the bulk CdS crystal. The analytical results demonstrate the occurrence of photon echo in direct-gap semiconductors.
Optical phase conjugation processes via degenerate four-wave mixing mechanisms have been investigated analytically in narrow direct-gap semiconductors duly irradiated by low-power near resonant lasers. The role of linear absorption phenomena is introduced intrinsically into the electromagnetic equations through complex first-order optical susceptibility of the crystal. A coherent radiation-exciton interaction model is employed to obtain the intensity-dependent crystal optical susceptibility. The band-to-band optical transitions into the true continuum above the fundamental absorption edge are considered. We have estimated qualitatively the conversion efficiency η for important III-V crystals like InSb, GaSb, and GaAs. The nature of variation of η with respect to detuning as well as excitation intensity are found to be in very good agreement with the experimental observations in ammonia, and in semiconductors like Si, Ge, and Hg1−xCdxTe. The analyses also reveal that large η can be derived by using submicrometer sized crystals. InSb is established as the most promising III-V semiconductor for optical phase conjugation device technology at very low cw resonant laser irradiation.
A novel form of laser frequency switching is devised which extends coherent optical transient studies to a 100-psec time scale. The technique incorporates a traveling-wave electro-optic element which imposes with unit efficiency a uniform time-varying phase and thus a frequency shift on a cw laser beam. In contrast to earlier optical traveling-wave modulators which are driven by a microwave oscillator, here the optical phase change is induced rapidly and easily by a dc electric field pulse that propagates in a microwave guide either parallel or antiparallel to the light wave. This advance enables optical free-induction decay (FID) studies on a subnanosecond time scale and reveals such new features as a rapid first-order FID that dephases with the inhomogeneous dephasing time T2∗{T}_{2}^{*}T2∗​. The well-known nonlinear FID can interfere with the first-order component at short times and decays over the much longer period $\frac{{T}_{2}}{[1+{(1+{\ensuremath{\chi}}^{2}{T}_{1}{T}_{2})}^{\frac{1}{2}}]}$, where $\ensuremath{\chi}$ is the Rabi frequency. A complete analytical expression is derived for optical FID of a transition subject to homogeneous and inhomogeneous broadening and supports detailed observations of the sodium D1{D}_{1}D1​ line.