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Journal of Applied Physics

Store–restore operation of flux quanta in coplanar type high Tc superconductive quantum interference devices

Hiroyuki Fuke, Kazuo Saitoh, Tadashi Utagawa, Youichi Enomoto

Published Sep 1, 1998• 2 citations
Publisher

Abstract

For a superconductive quantum interference device (SQUID) with rather large loop inductance for a single flux quantum, store–restore operation of flux quanta has been examined by external current pulses. To sense the stored flux quanta, the device includes another directly coupled SQUID as a magnetometer. Both of the coplanar type dc SQUIDs have been composed of Josephson junctions made by the narrow-focused ion beam irradiation technique in single-layer NdBa2Cu3O7−δ superconducting films. The SQUID has a critical current of 375 μA and an inductive parameter (βL) of 32. The number of stored flux quanta is controlled by the pulse signal height and the input terminal, but not by the number of pulses.

DOI
10.1063/1.368400

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For a superconductive quantum interference device (SQUID) with rather large loop inductance for a single flux quantum, store–restore operation of flux quanta has been examined by external current pulses. To sense the stored flux quanta, the device includes another directly coupled SQUID as a magnetometer. Both of the coplanar type dc SQUIDs have been composed of Josephson junctions made by the narrow-focused ion beam irradiation technique in single-layer NdBa2Cu3O7−δ superconducting films. The SQUID has a critical current of 375 μA and an inductive parameter (βL) of 32. The number of stored flux quanta is controlled by the pulse signal height and the input terminal, but not by the number of pulses.
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We have investigated the electrical properties of high-T c dc-SQUID's formed in a coplanar waveguide, and discussed their applicability to single flux quantum (SFQ) circuits. The planar type Josephson junctions were fabricated in NdBa2Cu3O y (NBCO) superconducting thin films by a narrow-focused ion beam (FIB) irradiation technique. The critical current and normal resistance values of the Josephson junction at 4.2 K were 115 µA and 8 Ω, respectively. The inductance was estimated by applying a direct injection of the control current into the dc-SQUID loop and measuring the periodic voltage response. A loop inductance of 47 pH was obtained for a 25 µm-wide and 20 µm-long dc-SQUID at 4.2 K. It has been clarified that for a stable operation of SFQ logic circuits, a 10 µm-square dc-SQUID's are required.
Operation principle of AND/OR logic has been realized in a coupled high-T c Superconducting QUantum Interference Device (SQUID). The device consists of rf- and dc-SQUID's. The logic operation is based on the nonlinear characteristics of the internal and external magnetic flux in the rf-SQUID. Results of the logic operation can be read out by the dc-SQUID. The device is made of NdBa2Cu3O7-δ superconducting thin film with superconducting weak links fabricated using a narrow-focused Ga-ion beam technology.
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The voltage modulation depths, ΔV of high-Tc direct current superconducting quantum interference devices (SQUIDs) with resistors connected in parallel with their inductances were investigated. Both the junctions and resistors in the SQUIDs were fabricated using focused electron-beam irradiation. The effect of varying the resistor value (using focused ion-beam trimming) and the screening parameter βL (by varying the temperature and hence the junction critical current) were studied. Significant enhancement of ΔV relative to an equivalent unshunted SQUID for βL values up to 50 was observed, and the most effective shunt resistor value was found to be approximately equal to the junction resistance.
We measured the static error rate of a high-Tc superconductor dc superconducting quantum interference device (SQUID), which, in the form as a storage loop for single flux quanta, is a basic element of rapid single flux quantum circuits. Using high-Tc multilayer bicrystal technology, we fabricated a stacked dc SQUID pair, one SQUID serving as the storage loop, the other one as the readout device. The escape rate of a stored flux quantum was measured as a function of the bias current at a temperature of 28 K. The measured error rates were in good agreement with a model calculation based on thermally activated barrier crossing.