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Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

Narrow-bandwidth high-brightness single photon emission from silicon-vacancy colour centres in CVD-nano-diamonds

Elke Neu, David Steinmetz, Carsten Arend, Janine Riedrich‐Möller, M. Fischer, S. Gsell, M. Schreck, Christoph Becher

Published May 1, 2011• 0 citations
Publisher

Abstract

This paper reports the fabrication of bright silicon vacancy (SiV) centres in an advanced material system. The authors use substrates consisting of a layer system of iridium on yttria-stabilized zirconia on silicon . Low density nanodiamond seeding is achieved via spin-coating. The seeded substrates are subjected to a microwave assisted CVD growth, yielding high-quality, spatially isolated nano-diamonds of approximately 100-150 nm in size.

DOI
10.1109/cleoe.2011.5943585

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This paper reports the fabrication of bright silicon vacancy (SiV) centres in an advanced material system. The authors use substrates consisting of a layer system of iridium on yttria-stabilized zirconia on silicon . Low density nanodiamond seeding is achieved via spin-coating. The seeded substrates are subjected to a microwave assisted CVD growth, yielding high-quality, spatially isolated nano-diamonds of approximately 100-150 nm in size.
We introduce a process for the fabrication of high-quality, spatially isolated nano-diamonds on iridium via microwave-plasma-assisted chemical vapour deposition (CVD) growth. We perform spectroscopy of single silicon-vacancy (SiV) centres produced during the growth of the nano-diamonds. The colour centres exhibit extraordinary narrow zero-phonon-lines down to 0.7 nm at room temperature. Single photon count rates up to 4.8 Mcps at saturation make these SiV centres the brightest diamond-based single photon sources to date. We measure for the first time the fine structure of a single SiV centre, thus confirming the atomic composition of the investigated colour centres.
Nanodiamonds containing color centers have been attracting attention as a hybrid system with nanophotonic devices to realize photonic quantum information devices such as highly efficient single photon sources. In various color centers, silicon vacancy (SiV) centers are especially interesting because of high photo-stability, high brightness, high Debye-Waller factor (about 70%), and lifetime-limited fluorescence linewidth. The nanodiamonds containing SiV centers have been usually fabricated by milling large nanodiamonds with SiV centers, which are synthesized by chemical vapor deposition (CVD). However, this milling method has an issue with the production yield. Here, we report on the fabrication of SiV centers inside nanodiamonds by direct implantation of Si ions, which allows the creation at a high production yield due to no requirement of the milling process. By implanting Si ions into nanodiamonds (median size of 25 nm), we fabricate SiV centers exhibiting a narrow linewidth of about 7 nm at room temperature. This linewidth is more than twice as narrow as previous reports on the implantation of Si ions into nanodiamonds.
We introduce an advanced material system for the production and spectroscopy of single silicon vacancy (SiV) color centers in diamond. We use microwave plasma chemical vapor deposition to synthesize heteroepitaxial nanodiamonds of approximately 160 nm in lateral size with a thickness of approximately 75 nm. These oriented ``nanoislands'' combine the enhanced fluorescence extraction from subwavelength-sized nanodiamonds with defined crystal orientation. The investigated SiV centers display narrow zero-phonon lines down to 0.7 nm in the wavelength range 730--750 nm. We investigate in detail the phonon coupling and vibronic sidebands of single SiV centers, revealing significant inhomogeneous effects. Polarization measurements reveal polarized luminescence and preferential absorption of linearly polarized light.
Single silicon vacancy (SiV) color centers in diamond have recently shown the ability for high brightness, narrow bandwidth, room temperature single photon emission. This work develops a model describing the three level population dynamics of single SiV centers in diamond nanocrystals on iridium surfaces including an intensity dependent de-shelving process. Furthermore, we investigate the brightness and photostability of single centers and find maximum single photon rates of 6.2 Mcps under continuous excitation. We investigate the collection efficiency of the fluorescence and estimate quantum efficiencies of the SiV centers.
Ultrasmall (about 10 nm), low-strain, artificially produced diamonds with an internal, active color center have substantial potential for quantum information processing and biomedical applications. Thus, it is of great importance to be able to artificially produce such diamonds. Here, we report on the high-pressure, high-temperature synthesis of such nanodiamonds about 10 nm in size and containing an optically active, single silicon-vacancy color center. Using special sample preparation technique, we were able to prepare samples containing single nanodiamonds on the surface. By correlating atomic-force microscope images and confocal optical images, we verified the presence of optically active color centers in single nanocrystals, and using second-order correlation measurements, we proved the single-photon emission statistics of these nanodiamonds. These color centers have nonblinking, spectrally narrow emission with narrow distribution of spectral width and positions of zero-phonon line, thus proving the high quality of the nanodiamonds produced.