We study parity violating states of strongly correlated two-dimensional electronic systems. On the basis of mean field theory for the SU(2N)-symmetric generalization of the system involved we give the arguments supporting the existence of these states at a filling number different from one-half. We derive an effective Lagrangian describing the long wavelength dynamics of magnetic excitations and their interaction with charged spinless holes. We establish that the ground state of a doped system is superconducting and discuss the phenomenological manifestations of the parity violation.We study parity violating states of strongly correlated two-dimensional electronic systems. On the basis of mean field theory for the SU(2N)-symmetric generalization of the system involved we give the arguments supporting the existence of these states at a filling number different from one-half. We derive an effective Lagrangian describing the long wavelength dynamics of magnetic excitations and their interaction with charged spinless holes. We establish that the ground state of a doped system is superconducting and discuss the phenomenological manifestations of the parity violation.

Dec 1, 19890 citations

Doped carrier formulation and mean-field theory of the tt′t″J model

Tiago C. Ribeiro, Xiao-Gang Wen

In the generalized- $tJ$ model the effect of a large local Coulomb repulsion is accounted for by restricting the Hilbert space to states with at most one electron per site. In this case the electronic system can be viewed in terms of holes hopping in a lattice of correlated spins, where holes are the carriers doped into the half-filled Mott insulator. To explicitly capture the interplay between the hole dynamics and local spin correlations we derive a formulation of the generalized- $tJ$ model where doped carrier operators are used instead of the original electron operators. This ``doped carrier'' formulation provides a starting point to address doped spin systems, and we use it to develop a fully fermionic, mean-field description of doped Mott insulators. This mean-field approach reveals a mechanism for superconductivity---namely, spinon-dopon mixing---and we apply it to the $t{t}^{\ensuremath{'}}{t}^{\ensuremath{''}}J$ model as of interest to high-temperature superconductors. In particular, we use model parameters borrowed from band calculations and from fitting angle-resolved photoemission spectroscopy data to obtain a mean-field phase diagram that reproduces semiquantitatively that of hole- and electron-doped cuprates. The mean-field approach hereby presented accounts for the local antiferromagnetic and $d$ -wave superconducting correlations which, we show, provide a rational for the role of ${t}^{\ensuremath{'}}$ and ${t}^{\ensuremath{''}}$ in strengthening superconductivity as expected by experiments and other theoretical approaches. As we discuss how $t$ , ${t}^{\ensuremath{'}}$, and ${t}^{\ensuremath{''}}$ affect the phase diagram, we also comment on possible scenarios to understand the differences between as-grown and oxygen-reduced electron-doped samples.In the generalized-$tJ$ model the effect of a large local Coulomb repulsion is accounted for by restricting the Hilbert space to states with at most one electron per site. In this case the electronic system can be viewed in terms of holes hopping in a lattice of correlated spins, where holes are the carriers doped into the half-filled Mott insulator. To explicitly capture the interplay between the hole dynamics and local spin correlations we derive a formulation of the generalized-$tJ$ model where doped carrier operators are used instead of the original electron operators. This ``doped carrier'' formulation provides a starting point to address doped spin systems, and we use it to develop a fully fermionic, mean-field description of doped Mott insulators. This mean-field approach reveals a mechanism for superconductivity---namely, spinon-dopon mixing---and we apply it to the $t{t}^{\ensuremath{'}}{t}^{\ensuremath{''}}J$ model as of interest to high-temperature superconductors. In particular, we use model parameters borrowed from band calculations and from fitting angle-resolved photoemission spectroscopy data to obtain a mean-field phase diagram that reproduces semiquantitatively that of hole- and electron-doped cuprates. The mean-field approach hereby presented accounts for the local antiferromagnetic and $d$-wave superconducting correlations which, we show, provide a rational for the role of ${t}^{\ensuremath{'}}$ and ${t}^{\ensuremath{''}}$ in strengthening superconductivity as expected by experiments and other theoretical approaches. As we discuss how $t$, ${t}^{\ensuremath{'}}$, and ${t}^{\ensuremath{''}}$ affect the phase diagram, we also comment on possible scenarios to understand the differences between as-grown and oxygen-reduced electron-doped samples.

arXiv:cond-mat/0601174Physical Review BOct 17, 200642 citations

Doping induced spinless collective excitations of charge 2e in doped Mott insulators

W. Vincent Liu

Based on the Hubbard model description of the doped Mott insulator, we prove that there must exist a spinless collective excitation of charge $2e$ and of energy $U-2μ$ peaked at momentum $(π/a,π/a)$ in the non-superconducting state due to doping. Such a collective excitation arises from the electron pair correlation. Its existence is related to the breakdown of an approximate SU(2) particle-hole symmetry, from which an effective field theory of the new excitations is constructed.Based on the Hubbard model description of the doped Mott insulator, we prove that there must exist a spinless collective excitation of charge $2e$ and of energy $U-2μ$ peaked at momentum $(π/a,π/a)$ in the non-superconducting state due to doping. Such a collective excitation arises from the electron pair correlation. Its existence is related to the breakdown of an approximate SU(2) particle-hole symmetry, from which an effective field theory of the new excitations is constructed.

arXiv:cond-mat/0010470Oct 29, 20000 citations

ELECTROMAGNETIC RESPONSE AND TRANSPORT PROPERTIES OF GENERALIZED FLUX STATES OF THE DOPED MOTT INSULATOR

Dmitri V. Khveshchenko

We consider electromagnetic response and kinetic properties of a strongly correlated two-dimensional electron system having parity- and time-reversal symmetry violating ground state. An important example of such a state is presented by a generalized flux phase of the doped Mott insulator with a fictitious magnetic field commensurate with filling. We observe that electromagnetic response functions of the compressible flux states exhibit no superconducting behaviour. Processes of spinon and holon scattering by fluctuations of a fictitious magnetic field produce a relaxation of the system. On the basis of the quantum kinetic equation we find frequency- and momentum-dependent electrical and thermal conductivities and thermopower of a generalized flux phase.We consider electromagnetic response and kinetic properties of a strongly correlated two-dimensional electron system having parity- and time-reversal symmetry violating ground state. An important example of such a state is presented by a generalized flux phase of the doped Mott insulator with a fictitious magnetic field commensurate with filling. We observe that electromagnetic response functions of the compressible flux states exhibit no superconducting behaviour. Processes of spinon and holon scattering by fluctuations of a fictitious magnetic field produce a relaxation of the system. On the basis of the quantum kinetic equation we find frequency- and momentum-dependent electrical and thermal conductivities and thermopower of a generalized flux phase.

International Journal of Modern Physics BFeb 28, 19930 citations

Stripes and spin-density waves in the doped two-dimensional Hubbard model: Ground state phase diagram

Hao Xu, Hao Shi, Ettore Vitali +2 more

We determine the spin and charge orders in the ground state of the doped two-dimensional (2D) Hubbard model in its simplest form, namely with only nearest-neighbor hopping and on-site repulsion. At half-filling, the ground state is known to be an antiferromagnetic Mott insulator. Doping Mott insulators is believed to be relevant to the superconductivity observed in cuprates. A variety of candidates have been proposed for the ground state of the doped 2D Hubbard model. A recent work employing a combination of several state-of-the-art numerical many-body methods established the stripe order as the ground state near $1/8$ doping at strong interactions. In this paper, we apply one of these methods, the cutting-edge constrained-path auxiliary field quantum Monte Carlo (AFQMC) method with self-consistently optimized gauge constraints, to systematically study the model as a function of doping and interaction strength. With careful finite size scaling based on large-scale computations, we map out the ground state phase diagram in terms of its spin and charge order. We find that modulated antiferromagnetic order persists from near half-filling to about $1/5$ doping. At lower interaction strengths or larger doping, these ordered states are best described as spin-density waves, with essentially delocalized holes and modest oscillations in charge correlations. When the charge correlations are stronger (large interaction or small doping), they are best described as stripe states, with the holes more localized near the node in the antiferromagnetic spin order. In both cases, we find that the wavelength in the charge correlations is consistent with so-called filled stripes.We determine the spin and charge orders in the ground state of the doped two-dimensional (2D) Hubbard model in its simplest form, namely with only nearest-neighbor hopping and on-site repulsion. At half-filling, the ground state is known to be an antiferromagnetic Mott insulator. Doping Mott insulators is believed to be relevant to the superconductivity observed in cuprates. A variety of candidates have been proposed for the ground state of the doped 2D Hubbard model. A recent work employing a combination of several state-of-the-art numerical many-body methods established the stripe order as the ground state near $1/8$ doping at strong interactions. In this paper, we apply one of these methods, the cutting-edge constrained-path auxiliary field quantum Monte Carlo (AFQMC) method with self-consistently optimized gauge constraints, to systematically study the model as a function of doping and interaction strength. With careful finite size scaling based on large-scale computations, we map out the ground state phase diagram in terms of its spin and charge order. We find that modulated antiferromagnetic order persists from near half-filling to about $1/5$ doping. At lower interaction strengths or larger doping, these ordered states are best described as spin-density waves, with essentially delocalized holes and modest oscillations in charge correlations. When the charge correlations are stronger (large interaction or small doping), they are best described as stripe states, with the holes more localized near the node in the antiferromagnetic spin order. In both cases, we find that the wavelength in the charge correlations is consistent with so-called filled stripes.

arXiv:2112.02187Physical Review ResearchMar 28, 202274 citations

Pseudogap and superconductivity in two-dimensional doped charge-transfer insulators

Lorenzo Fratino, P. Sémon, G. Sordi +1 more

High-temperature superconductivity emerges upon doping a state of matter that is insulating because of interactions. A widely studied model considers one orbital per ${\mathrm{CuO}}_{2}$ unit cell on a square lattice with a strong intraorbital repulsion that leads to a so-called Mott-Hubbard insulator. Here we solve a model that takes into account, within each unit cell, two oxygen orbitals where there is no electron-electron repulsion and a copper orbital with strong electron-electron repulsion. The insulating phase is a so-called charge-transfer insulator, not a Mott-Hubbard insulator. Using cluster dynamical mean-field theory with continuous-time quantum Monte Carlo as an impurity solver and 12 atoms per cluster, we report the normal and superconducting phase diagram of this model as a function of doping, interaction strength, and temperature. As expected, the three-orbital model is consistent with the experimental observation that doped holes are located predominantly on oxygens, a result that goes beyond the one-orbital model. Nevertheless, the phase boundary between pseudogap and correlated metal, the Widom line, and the origin of the pairing energy (kinetic vs potential) are similar to the one-orbital model, demonstrating that these are emergent phenomena characteristic of doped Mott insulators, independently of many microscopic details. Broader implications are discussed.High-temperature superconductivity emerges upon doping a state of matter that is insulating because of interactions. A widely studied model considers one orbital per ${\mathrm{CuO}}_{2}$ unit cell on a square lattice with a strong intraorbital repulsion that leads to a so-called Mott-Hubbard insulator. Here we solve a model that takes into account, within each unit cell, two oxygen orbitals where there is no electron-electron repulsion and a copper orbital with strong electron-electron repulsion. The insulating phase is a so-called charge-transfer insulator, not a Mott-Hubbard insulator. Using cluster dynamical mean-field theory with continuous-time quantum Monte Carlo as an impurity solver and 12 atoms per cluster, we report the normal and superconducting phase diagram of this model as a function of doping, interaction strength, and temperature. As expected, the three-orbital model is consistent with the experimental observation that doped holes are located predominantly on oxygens, a result that goes beyond the one-orbital model. Nevertheless, the phase boundary between pseudogap and correlated metal, the Widom line, and the origin of the pairing energy (kinetic vs potential) are similar to the one-orbital model, demonstrating that these are emergent phenomena characteristic of doped Mott insulators, independently of many microscopic details. Broader implications are discussed.

arXiv:1602.02280Physical review. B./Physical review. BJun 24, 201631 citations

In the generalized-

tJ

model the effect of a large local Coulomb repulsion is accounted for by restricting the Hilbert space to states with at most one electron per site. In this case the electronic system can be viewed in terms of holes hopping in a lattice of correlated spins, where holes are the carriers doped into the half-filled Mott insulator. To explicitly capture the interplay between the hole dynamics and local spin correlations we derive a formulation of the generalized-

tJ

model where doped carrier operators are used instead of the original electron operators. This ``doped carrier'' formulation provides a starting point to address doped spin systems, and we use it to develop a fully fermionic, mean-field description of doped Mott insulators. This mean-field approach reveals a mechanism for superconductivity---namely, spinon-dopon mixing---and we apply it to the $t{t}^{\ensuremath{'}}{t}^{\ensuremath{''}}J$ model as of interest to high-temperature superconductors. In particular, we use model parameters borrowed from band calculations and from fitting angle-resolved photoemission spectroscopy data to obtain a mean-field phase diagram that reproduces semiquantitatively that of hole- and electron-doped cuprates. The mean-field approach hereby presented accounts for the local antiferromagnetic and

d

-wave superconducting correlations which, we show, provide a rational for the role of ${t}^{\ensuremath{'}}$ and ${t}^{\ensuremath{''}}$ in strengthening superconductivity as expected by experiments and other theoretical approaches. As we discuss how

t

, ${t}^{\ensuremath{'}}$, and ${t}^{\ensuremath{''}}$ affect the phase diagram, we also comment on possible scenarios to understand the differences between as-grown and oxygen-reduced electron-doped samples.

Based on the Hubbard model description of the doped Mott insulator, we prove that there must exist a spinless collective excitation of charge

2e

and of energy

U-2μ

peaked at momentum

(π/a,π/a)

in the non-superconducting state due to doping. Such a collective excitation arises from the electron pair correlation. Its existence is related to the breakdown of an approximate SU(2) particle-hole symmetry, from which an effective field theory of the new excitations is constructed.

1/8

doping at strong interactions. In this paper, we apply one of these methods, the cutting-edge constrained-path auxiliary field quantum Monte Carlo (AFQMC) method with self-consistently optimized gauge constraints, to systematically study the model as a function of doping and interaction strength. With careful finite size scaling based on large-scale computations, we map out the ground state phase diagram in terms of its spin and charge order. We find that modulated antiferromagnetic order persists from near half-filling to about

1/5

doping. At lower interaction strengths or larger doping, these ordered states are best described as spin-density waves, with essentially delocalized holes and modest oscillations in charge correlations. When the charge correlations are stronger (large interaction or small doping), they are best described as stripe states, with the holes more localized near the node in the antiferromagnetic spin order. In both cases, we find that the wavelength in the charge correlations is consistent with so-called filled stripes.

High-temperature superconductivity emerges upon doping a state of matter that is insulating because of interactions. A widely studied model considers one orbital per

{\mathrm{CuO}}_{2}

unit cell on a square lattice with a strong intraorbital repulsion that leads to a so-called Mott-Hubbard insulator. Here we solve a model that takes into account, within each unit cell, two oxygen orbitals where there is no electron-electron repulsion and a copper orbital with strong electron-electron repulsion. The insulating phase is a so-called charge-transfer insulator, not a Mott-Hubbard insulator. Using cluster dynamical mean-field theory with continuous-time quantum Monte Carlo as an impurity solver and 12 atoms per cluster, we report the normal and superconducting phase diagram of this model as a function of doping, interaction strength, and temperature. As expected, the three-orbital model is consistent with the experimental observation that doped holes are located predominantly on oxygens, a result that goes beyond the one-orbital model. Nevertheless, the phase boundary between pseudogap and correlated metal, the Widom line, and the origin of the pairing energy (kinetic vs potential) are similar to the one-orbital model, demonstrating that these are emergent phenomena characteristic of doped Mott insulators, independently of many microscopic details. Broader implications are discussed.