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Hybrid single-electron turnstile - Towards a quantum standard of electric current

Jukka P Pekola, D. V. Averin, Sergey G. Kafanov, A. Kemppinen, S. V. Lotkhov, V. F. Maisi, M. Meschke, Mikko Möttönen, Yu. A. Pashkin, O.-P. Saira, J. S. Tsai, Alexander B Zorin

Published Jun 1, 2010• 1 citation
Publisher

Abstract

First I discuss various candidates of single-electron current pumps for quantum metrology. Then I focus on the hybrid normal-metal-superconductor turnstile in the form of a one-island single-electron transistor with one gate. The device demonstrates robust current plateaus at multiple levels of ef at frequency f. I discuss the various error mechanisms, based on our experiments and theoretical considerations. Ultimately the quantization accuracy is expected to be limited by either two-electron tunneling or by Cooper-pair-electron co-tunneling. We predict that it should be possible to achieve the metrological accuracy of 10-8, while maintaining the quantized current on the level of more than 10 pA, just by one turnstile with realistic parameters using aluminium as a superconductor. Recently we have managed to run ten turnstiles in parallel increasing the current level to above 100 pA. Work on suppressing the harmful sub-gap leakage current is in progress with encouraging experimental results.

DOI
10.1109/cpem.2010.5544502

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First I discuss various candidates of single-electron current pumps for quantum metrology. Then I focus on the hybrid normal-metal-superconductor turnstile in the form of a one-island single-electron transistor with one gate. The device demonstrates robust current plateaus at multiple levels of ef at frequency f. I discuss the various error mechanisms, based on our experiments and theoretical considerations. Ultimately the quantization accuracy is expected to be limited by either two-electron tunneling or by Cooper-pair-electron co-tunneling. We predict that it should be possible to achieve the metrological accuracy of 10-8, while maintaining the quantized current on the level of more than 10 pA, just by one turnstile with realistic parameters using aluminium as a superconductor. Recently we have managed to run ten turnstiles in parallel increasing the current level to above 100 pA. Work on suppressing the harmful sub-gap leakage current is in progress with encouraging experimental results.
We study theoretically current quantization in the charge turnstile based on the superconductor-normal-metal single-electron transistor. The quantization accuracy is limited by either Andreev reflection or by Cooper-pair-electron cotunneling. The rates of these processes are calculated in the "above-the-threshold" regime when they compete directly with the lowest-order tunneling. By shaping the ac gate voltage drive it should be possible to achieve the metrological accuracy of 10;{-8}, while maintaining the quantized current on the level of 30 pA, just by one turnstile with realistic parameters using aluminum as a superconductor.
This Thesis studies opportunities to create a quantum standard for the electric current with the help of tunnel junctions. We use two types of tunnel junctions: superconducting Josephson junctions, and NIS junctions where one of the electrodes is normal (N) and the other one superconducting (S). In both cases, tunnel junctions are employed in a single-electron transistor (SET) structure, which is used to transfer a controlled number k of electrons (e) with the repetition frequency f. The magnitude of the resulting current is thus I = kef. First, we study the Cooper pair sluice, where Josephson junctions are connected as two superconducting quantum interference devices (SQUID). A gate electrode is used to control the charge state of the superconducting island formed between the SQUIDs. The sluice is based on tuning the tunneling rates through the SQUIDs with local magnetic fluxes, which allows to control the direction of the charge transfer. Weak traces of current quantization can be observed up to above 1 nA, which is large enough current for many metrological purposes. However, the accuracy of the current is still far from what is required in metrology. We study also a new type of SQUID structure, the balanced SQUID, which could be used to improve the accuracy of the sluice or in, e.g., some quantum computing applications. Second, we employ NIS junctions in the hybrid (SINIS) single-electron transistor with superconducting leads and a normal-metal island. This structure can be used as the SINIS turnstile which lets electrons to flow one by one in the direction determined by the bias voltage. We report the first experimental results on the SINIS turnstile and two methods to improve the accuracy of the current: increasing the charging energy of the island or connecting the turnstile in a resistive environment. We also show that the SINIS turnstile can be used as an electronic radio-frequency refrigerator where tunneling processes cool the electron temperature of the normal-metal island.
In a superconducting single-electron transistor (SSET), we demonstrate a charge turnstile regime based on higher-order tunneling as a major transport mechanism. In this regime, the quantized current appears as a sequence of Cooper pair-electron cotunneling events cycled by a periodic gate signal and transferring a discrete three-electron charge per cycle. Operating as a relatively slow, higher-order tunneling system, the 3e-turnstile exhibits stable current plateaus in the sub-pA range. The device could be useful for generating precise ultralow currents as well as for experimental evaluation of cotunneling error rates in electron turnstiles.
We present an experimental study of hybrid turnstiles with high charging energies in comparison to the superconducting gap. The device is modeled with the sequential tunneling approximation. The backtunneling effect is shown to limit the amplitude of the gate drive and thereby the maximum pumped current of the turnstile. We compare results obtained with sine and square wave drive and show how a fast rise time can suppress errors due to leakage current. Quantized current plateaus up to 160 pA are demonstrated.
We present an experimental study of hybrid turnstiles with high charging energies in comparison to the superconducting gap. The device is modeled with the sequential tunneling approximation. The backtunneling effect is shown to limit the amplitude of the gate drive and thereby the maximum pumped current of the turnstile. We compare results obtained with sine and square wave drive and show how a fast rise time can suppress errors due to leakage current. Quantized current plateaus up to 160 pA are demonstrated.