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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Laser spectroscopy of atoms approaching a surface of ionic crystalline material: evidence of pure dephasing due to stochastic near fields

V. V. Khromov, Nikita B. Leonov, Sergey G. Przhibel'skii, Valentin N. Smirnov, E. V. Vaschenko, T. A. Vartanyan

Published Jun 15, 2007• 0 citations
Publisher

Abstract

The shape of the luminescence spectrum of Cs atoms flying near a sapphire surface is explored experimentally and described phenomenologically for the detuning range of 5 to 50 cm-1 on both sides of D2 line. The numerical fitting of one theoretical parameter and a small variation of another parameter ensure a satisfactory agreement with the experimental spectrum. The experimentally determined abnormally high intensity of the antistatic wing is explained by the effect of phase relaxation of the atomic transition, caused by fluctuations of the electric field of oscillating ions of the sapphire crystal lattice.

DOI
10.1117/12.752372

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Abstract The influence of interaction of Cs atoms with a dielectric surface on position and shape of the hyperfine components of the D2 line in the case of nanometer-scale distance between the atom and the surface is investigated. Using a wedged nanocell enabled investigating the dependence of shift of all hyperfine components of the D2 line corresponding to Fg = 3 → Fe = 2, 3, 4 and Fg = 4 → Fe = 3, 4, 5 transitions on distance L between the atoms and the surface of a sapphire window in the interval from 50 to 400 nm. At L smaller than 100 nm, atomic transitions experience strong broadening due to van der Waals interaction and shift to lower frequencies (the red shift). Calculation of the second derivative (SD) of the absorption spectra of vapors in a nanocell allows spectrally resolving the hyperfine components of an atomic transition down to L ~ 50 nm and determining the van der Waals interaction coefficient C3. It is demonstrated that the spectrum experiences an additional red shift with increase in the density of atoms at L < 100 nm. In contrast, a blue shift occurs with increase in the density of atoms at relatively large distances between the atoms and the surface (L ~ 400 nm). The above results are important for development of miniature submicron-size devices containing alkali metals.

Optics and Spectroscopy•May 1, 2020•5 citations
The shape of the luminescence spectrum of Cs atoms flying near a sapphire surface is explored experimentally and described phenomenologically for the detuning range of 5 to 50 cm-1 on both sides of D2 line. The numerical fitting of one theoretical parameter and a small variation of another parameter ensure a satisfactory agreement with the experimental spectrum. The experimentally determined abnormally high intensity of the antistatic wing is explained by the effect of phase relaxation of the atomic transition, caused by fluctuations of the electric field of oscillating ions of the sapphire crystal lattice.
The shape of the luminescence spectrum of Cs atoms flying near a sapphire surface is described phenomenologically for the detuning from the D 2 line ranging within 5–50 cm −1 . The numerical fitting of one theoretical parameter and a small variation of another parameter ensures a satisfactory agreement with the experimental spectrum. The experimentally determined abnormally high intensity of the antistatic wing is explained by the effect of phase relaxation of the atomic transition, caused by fluctuations of the electric field of oscillating ions of the sapphire crystal lattice.
The spectrum of resonantly excited luminescence of Cs atoms in a microcell with sapphire windows has been studied. Spectral wings of atomic luminescence near the windows have been revealed near (±50 cm−1) the D2 line of the excited 6S 1/2–6P 3/2 transition. At the same time, the radiation of the D1 line has been found. The features of the spectrum of the far wings, namely, the exponential shape and the relatively small difference between the static and the antistatic wings, as well as the radiation of the D1 line, have been explained by the mixing of fine-structure states due to interactions of Cs atoms with the sapphire windows. From the relative intensity of the lines, it has been determined that the probability of luminescence quenching at the window surfaces differs from unity by no less than 1/700.
The spectrum of the luminescence in the far wing of the atomic spectral line due to the atom-surface collisions between cesium atoms and sapphire surface is obtained experimentally. A cw diode laser operating at the wavelength of 852.1 nm resonant to the 6S1/2 - 6P3/2 transition in the free Cs atoms was used to excite the luminescence of atomic vapors. To avoid atom-atom collisions a specially designed spectroscopic cell with two sapphire windows only 3 μm apart was employed. The wings were measured for the detuning up to 200 cm-1 on both sides ofthe atomic spectral line. Besides the wings, luminescence at the wavelength of 894.3 nm corresponding to the 6S1/2 - 6P1/2 transition was observed. Notwithstanding high quenching probability, more than 0.5% of the atoms leave the surface in the state of another fine-structure component.
The changes in the states of excited Rb atoms approaching a single-crystal sapphire surface have been investigated by methods of laser-excitation spectroscopy and luminescence of Rb vapor in a cell with sapphire windows, the gap between which was varied from 250 to 500 nm. Upon resonant excitation of Rb atoms by two semiconductor lasers with powers of 20 and 40 mW, luminescence from optically excited 5D 3/2 and 5D 5/2 states and optically unexcited 6P 1/2 and 6P 3/2 states is observed. It is established that the luminescence intensity from unexcited states is only a few times lower than that from excited states, with allowance for the fact that excited atoms are rapidly and almost completely quenched on the sapphire surface. The found anomalously strong luminescence from optically unexcited 6P J states is explained by their nonradiative occupation near the sapphire surface from optically excited 5P J states, in which atoms fail to reach the sapphire surface because of the repulsion from it. This repulsion is due to the polarization interaction between sapphire and the atoms in the 5P J states near the surface. Nonradiative transition from the 5P J state to the 6P J −1 state is accompanied by excitation of two optical phonons in sapphire.
The influence of the interaction of Cs atoms with a dielectric surface on the position and shape of the hyperfine components of the D2 line at nanometer-order distances between atoms and the surface is studied. The use of a nanocell with a wedge-shaped gap made it possible to study the dependence of the shifts of all the hyperfine components of the D2 line corresponding to the transitions Fg = 3- Fe = 2, 3, 4 and Fg = 4- Fe = 3, 4, 5, on the distance L between the atoms and the sapphire surface windows in the range of 50–400 nm. At L less than 100 nm, due to the van der Waals interaction, there is a strong broadening of atomic transitions and a shift of their frequencies to the low-frequency region of the spectrum (red shift). The calculation of the second derivative (SD) of the vapor absorption spectra in the nanocell allows one to spectrally resolve the hyperfine components of the atomic transition down to L about 50 nm and measure the coefficient of the van der Waals interaction C3. It is shown that, at L <100 nm, an additional red shift occurs with increasing atomic density, while at relatively large distances between atoms and the surface L about 400 nm, an increase in atomic density causes a blue shift of the atomic transition frequencies. The above results are important in the development of miniature submicron devices containing atomic vapor of alkali metal.
Abstract The influence of interaction of Cs atoms with a dielectric surface on position and shape of the hyperfine components of the D2 line in the case of nanometer-scale distance between the atom and the surface is investigated. Using a wedged nanocell enabled investigating the dependence of shift of all hyperfine components of the D2 line corresponding to Fg = 3 → Fe = 2, 3, 4 and Fg = 4 → Fe = 3, 4, 5 transitions on distance L between the atoms and the surface of a sapphire window in the interval from 50 to 400 nm. At L smaller than 100 nm, atomic transitions experience strong broadening due to van der Waals interaction and shift to lower frequencies (the red shift). Calculation of the second derivative (SD) of the absorption spectra of vapors in a nanocell allows spectrally resolving the hyperfine components of an atomic transition down to L ~ 50 nm and determining the van der Waals interaction coefficient C3. It is demonstrated that the spectrum experiences an additional red shift with increase in the density of atoms at L < 100 nm. In contrast, a blue shift occurs with increase in the density of atoms at relatively large distances between the atoms and the surface (L ~ 400 nm). The above results are important for development of miniature submicron-size devices containing alkali metals.