Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Applied Physics Letters

Optical studies of erbium excited states in Ga0.55Al0.45As

T. Benyattou, D. Seghier, G. Guillot, R. Moncorgé, Pierre Galtier, M. N. Charasse

Published Jan 20, 1992• 23 citations
Publisher

Abstract

Photoluminescence experiments have been carried out on erbium doped Ga0.55Al0.45As under continuous wave and pulsed laser excitation. For the first time the emissions arising from the two first Er3+ excited states 4I11/2, 4I13/2 and their temperature dependence have been systematically studied. From these results the nature and the excitation-deexcitation processes of these photoluminescences are discussed. With the help of these spectroscopic data we give an estimate of the stimulated emission cross section and the laser applications of such rare-earth doped III-V materials are examined.

DOI
10.1063/1.106653

Related papers

Enhanced absorption by stimulated emission in three excited states of Er3+ in yttrium aluminum garnet

Yoshinobu Maeda, Masatoshi Migitaka

Using a laser diode modulated at 250 and 500 MHz, dependence of enhanced absorption on both sample length and temperature was investigated in an erbium doped yttrium aluminum garnet crystal. The transmitted laser intensity decreased with a decay time of 300 ps for sample lengths greater than 3.0 mm and temperatures higher than 50 K when the incident laser intensity increased. In addition, an emission peak was observed near 835 nm corresponding to the transition from the S3/24 level to the I13/24 in Er3+. It was suggested that the enhanced absorption was caused by stimulated emission in three excited states.

Applied Physics Letters•Jan 6, 1997•31 citations

Intracenter transitions in triply ionized erbium ions diffused into III-V compound semiconductors

Xinwei Zhao, Kazuhiko Hirakawa, Toshiaki Ikoma

The rare-earth element, erbium (Er), was successfully diffused into GaAs and InP for the first time. Two intense and three weak sharp photoluminescence (PL) lines related with Er were observed at a wavelength of ∼1.55 μm both in GaAs and InP. It was found, for the first time, that the emission energy and the linewidth of the two intense Er-related PL lines do not depend on temperatures up to 220 K. This clearly indicates that these sharp emission lines are due to 4f-intracenter transitions in triply ionized erbium (Er3+) ions, and that the 4f orbitals are well shielded from a crystal field by the outer closed orbitals. Furthermore, it was found that the intensity ratio of the five emission lines from Er3+ is independent of the excitation power density. The results reveal that the Er3+ ion substitutes a cation site both in GaAs and InP, and that the five PL lines correspond to the transitions from the first excited state to the five crystal-field-split ground states of Er3+ ion with a tetrahedral (Td) symmetry.

Applied Physics Letters•Feb 20, 1989•27 citations

Spectroscopic characteristics of the erbium ions and laser action at the transition4S3/2 →4I9/2 (λe ≍ 1.66 μm) in the crystals of gadolinium, yttrium, and lutecium orthoaluminates

I. V. Mochalov

The Czochralski method is employed to synthesize crystals of compound orthoaluminates: GdAlO3, YAlO3, and LuAlO3 doped with erbium (Er3+). The crystal splitting schemes of 4S3/2, 4F9/2, 4IJ levels of Er3+ at 77 K are plotted based on an analysis of optical spectra. Stimulated emission due to a 4S3/2 → 4I9/2 transition is observed from Er3+ ions GdAlO3, YAlO3 at 77 K. Pulsed laser action at room temperature is only observed from Er3+ ions in YAlO3.

physica status solidi (a)•Sep 16, 1979•7 citations

Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation

B. A. Andreev, Z. F. Krasil’nik, D. I. Kryzhkov +2 more

Dependences of the erbium photoluminescence intensity in Si:Er/Si structures have been studied in cases of homogeneous (over the sample surface) and inhomogeneous optical excitation. It is shown that the excitation mode strongly affects the type of the dependences obtained. A method for determining the excitation cross section of the Er ion under both continuous and pulsed optical pumping is discussed. The value obtained for the effective excitation cross section of erbium ions in silicon, σ = 5 × 10 −14 cm 2 at a temperature of 8 K, is an order of magnitude larger than the values known from published material.

Semiconductors•Nov 1, 2012•6 citations

Direct evidence of trap-mediated excitation in GaN:Er3+ with a two-color experiment

Loïc Bodiou, Alain Braud

We report a direct confirmation of the generally proposed rare-earth excitation model in GaN. The intermediate step involving the formation of excitons bound to rare-earth ions prior to the rare-earth excitation is demonstrated. Using a two-color experiment, we show that the erbium photoluminescence decay following a pulsed laser excitation is quenched when an additional continuous-wave (cw) laser is applied. As the two beams excite the sample, the cw beam perturbs the intermediate step of the Er excitation mechanism either by photoionization of Er-related trapped carriers or by inducing an Auger effect between the trapped carriers and free carriers.

Applied Physics Letters•Oct 13, 2008•11 citations

Excitation cross section of erbium in semiconductor matrices under optical pumping

Oleg B. Gusev, Mikhail S. Bresler, Petr E. Pak +4 more

Based on a detailed consideration of excitation mechanisms of erbium in crystalline and amorphous matrix we present an analysis of the physical meaning of the Auger excitation cross section of ${\mathrm{Er}}^{3+}$ ions in semiconductor. It is demonstrated that large values of Auger excitation cross sections under optical pumping in semiconductor matrices are due to large values of band-to-band absorption coefficient exceeding by several orders of magnitude the absorption coefficient of erbium in dielectric ${\mathrm{SiO}}_{2}$ and ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}$ matrix. The Auger excitation cross section of ${\mathrm{Er}}^{3+}$ in semiconductor matrices is roughly given by the ratio of the matrix absorption coefficient to concentration of ${\mathrm{Er}}^{3+}$ ions. While the analysis of the excitation cross section is carried out for Er-doped crystalline and amorphous silicon, the results are expected to be applicable to the other rare-earth doped semiconductors. Based on low-temperature experimental results for crystalline silicon we get the Auger excitation coefficient of ${c}_{A}^{\mathrm{cryst}}\ensuremath{\approx}7\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}10} {\mathrm{cm}}^{3}{\mathrm{s}}^{\ensuremath{-}1}$ and the effective excitation cross section ${\ensuremath{\sigma}}_{\mathrm{eff}}^{\mathrm{cryst}}=(2\ensuremath{-}8)\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}12} {\mathrm{cm}}^{2}.$ For amorphous silicon at 100 K we obtain ${\ensuremath{\sigma}}_{\mathrm{eff}}^{\mathrm{amorph}}\ensuremath{\approx}1.4\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}14} {\mathrm{cm}}^{2}.$

Physical review. B, Condensed matter•Jul 5, 2001•52 citations
Photoluminescence experiments have been carried out on erbium doped Ga0.55Al0.45As under continuous wave and pulsed laser excitation. For the first time the emissions arising from the two first Er3+ excited states 4I11/2, 4I13/2 and their temperature dependence have been systematically studied. From these results the nature and the excitation-deexcitation processes of these photoluminescences are discussed. With the help of these spectroscopic data we give an estimate of the stimulated emission cross section and the laser applications of such rare-earth doped III-V materials are examined.
Using a laser diode modulated at 250 and 500 MHz, dependence of enhanced absorption on both sample length and temperature was investigated in an erbium doped yttrium aluminum garnet crystal. The transmitted laser intensity decreased with a decay time of 300 ps for sample lengths greater than 3.0 mm and temperatures higher than 50 K when the incident laser intensity increased. In addition, an emission peak was observed near 835 nm corresponding to the transition from the S3/24 level to the I13/24 in Er3+. It was suggested that the enhanced absorption was caused by stimulated emission in three excited states.
The rare-earth element, erbium (Er), was successfully diffused into GaAs and InP for the first time. Two intense and three weak sharp photoluminescence (PL) lines related with Er were observed at a wavelength of ∼1.55 μm both in GaAs and InP. It was found, for the first time, that the emission energy and the linewidth of the two intense Er-related PL lines do not depend on temperatures up to 220 K. This clearly indicates that these sharp emission lines are due to 4f-intracenter transitions in triply ionized erbium (Er3+) ions, and that the 4f orbitals are well shielded from a crystal field by the outer closed orbitals. Furthermore, it was found that the intensity ratio of the five emission lines from Er3+ is independent of the excitation power density. The results reveal that the Er3+ ion substitutes a cation site both in GaAs and InP, and that the five PL lines correspond to the transitions from the first excited state to the five crystal-field-split ground states of Er3+ ion with a tetrahedral (Td) symmetry.
Dependences of the erbium photoluminescence intensity in Si:Er/Si structures have been studied in cases of homogeneous (over the sample surface) and inhomogeneous optical excitation. It is shown that the excitation mode strongly affects the type of the dependences obtained. A method for determining the excitation cross section of the Er ion under both continuous and pulsed optical pumping is discussed. The value obtained for the effective excitation cross section of erbium ions in silicon, σ = 5 × 10 −14 cm 2 at a temperature of 8 K, is an order of magnitude larger than the values known from published material.
We report a direct confirmation of the generally proposed rare-earth excitation model in GaN. The intermediate step involving the formation of excitons bound to rare-earth ions prior to the rare-earth excitation is demonstrated. Using a two-color experiment, we show that the erbium photoluminescence decay following a pulsed laser excitation is quenched when an additional continuous-wave (cw) laser is applied. As the two beams excite the sample, the cw beam perturbs the intermediate step of the Er excitation mechanism either by photoionization of Er-related trapped carriers or by inducing an Auger effect between the trapped carriers and free carriers.
Based on a detailed consideration of excitation mechanisms of erbium in crystalline and amorphous matrix we present an analysis of the physical meaning of the Auger excitation cross section of Er3+{\mathrm{Er}}^{3+}Er3+ ions in semiconductor. It is demonstrated that large values of Auger excitation cross sections under optical pumping in semiconductor matrices are due to large values of band-to-band absorption coefficient exceeding by several orders of magnitude the absorption coefficient of erbium in dielectric SiO2{\mathrm{SiO}}_{2}SiO2​ and Al2O3{\mathrm{Al}}_{2}{\mathrm{O}}_{3}Al2​O3​ matrix. The Auger excitation cross section of Er3+{\mathrm{Er}}^{3+}Er3+ in semiconductor matrices is roughly given by the ratio of the matrix absorption coefficient to concentration of Er3+{\mathrm{Er}}^{3+}Er3+ ions. While the analysis of the excitation cross section is carried out for Er-doped crystalline and amorphous silicon, the results are expected to be applicable to the other rare-earth doped semiconductors. Based on low-temperature experimental results for crystalline silicon we get the Auger excitation coefficient of ${c}_{A}^{\mathrm{cryst}}\ensuremath{\approx}7\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}10} {\mathrm{cm}}^{3}{\mathrm{s}}^{\ensuremath{-}1}$ and the effective excitation cross section ${\ensuremath{\sigma}}_{\mathrm{eff}}^{\mathrm{cryst}}=(2\ensuremath{-}8)\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}12} {\mathrm{cm}}^{2}.$ For amorphous silicon at 100 K we obtain ${\ensuremath{\sigma}}_{\mathrm{eff}}^{\mathrm{amorph}}\ensuremath{\approx}1.4\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}14} {\mathrm{cm}}^{2}.$