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Physica B Condensed Matter

Laser effects in semiconductor heterostructures within an extended dressed-atom approach

Humberto Siqueira Brandi, Andrea Latge, L. E. Oliveira

Published Jan 1, 2001• 14 citations
Publisher
DOI
10.1016/s0921-4526(01)00407-0

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Laser effects in semiconductor heterostructures within an extended dressed-atom approach

Humberto Siqueira Brandi, Andrea Latge, L. E. Oliveira

We extend the dressed-atom approach to treat the interaction of a laser field with a semiconductor system. The semiconductor is modeled via a simple Kane band-structure scheme and the interaction with the laser field is incorporate through the renormalization of the semiconductor energy gap and conduction/valence effective masses. Far from resonances, such one-body approach allows the study of the effects of laser fields on a variety of optoelectronic phenomena in semiconductor systems for which the effective-mass approximation provides a good physical description. We calculate the effects originated by the laser-dressing on the donor and exciton peack energies in quantum-well heterostructures, and show that they may be quite considerable and observable.

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Dressed-band approach and Coulomb corrections to the light-induced exciton Stark shift

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In the present work, we perform a comparison of theoretical approaches involving Coulomb-interaction corrections within the Hartree–Fock approximation and the renormalized dressed-band scheme in the large detuning limit. We focus on the well-studied optical Stark shift of the exciton peak in bulk and GaAs–(Ga,Al)As semiconductor quantum wells. It is argued that the Hartree–Fock scheme has severe limitations concerning its application to real experimental situations, even in the simplest laser field–perturbative regime. It is also shown, through a comparison between experiments and a three-band Kane-dressed GaAs–(Ga,Al)As quantum well calculation, that a proper treatment of band structure and confinement effects due to the quantum well is of fundamental importance in a theoretical understanding of Stark shift experimental measurements, and that the renormalized dressed-band approach is a very convenient tool to treat, in the large detuning limit, processes involving the laser–semiconductor interaction in low-dimensional heterostructures.

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We study the effects of a laser on the splitting of the lowest electronic states of a pair of two-dimensional (2D) GaAs-(Ga,Al)As coupled quantum dots, in the presence of a homogeneous external magnetic field. The interaction of light with the 2D quantum dots is treated within a dressed-band approach in which a two-band scheme is used to model the GaAs bulk semiconductor whereas the interaction with the laser field is treated through the renormalization of the semiconductor energy gap and conduction/valence effective masses. This approach is valid far from resonances and has been successfully used to treat other confined semiconductor heterostructures. We focus our attention on the splitting of the lowest singlet and triplet states and on their double occupation probability. We analyze the exchange coupling (J) in the effective Heisenberg model as a function of the laser field and its detuning, as well as of the magnetic field (B) within the Heitler-London approximation of molecular physics. We find that due to the electronic confinement the laser may play a role similar to the external magnetic field in the qualitative behavior of the exchange parameter J. Furthermore, the presence of the laser may assure both the sizable exchange coupling and the vanishingly small double occupation probability required for efficient quantum computer operations, even in the absence of an external magnetic field. Besides being of fundamental interest, these features may be used as an efficient two-qubit gate control.

Journal of Applied Physics•Aug 1, 2003•8 citations
We extend the dressed-atom approach to treat the interaction of a laser field with a semiconductor system. The semiconductor is modeled via a simple Kane band-structure scheme and the interaction with the laser field is incorporate through the renormalization of the semiconductor energy gap and conduction/valence effective masses. Far from resonances, such one-body approach allows the study of the effects of laser fields on a variety of optoelectronic phenomena in semiconductor systems for which the effective-mass approximation provides a good physical description. We calculate the effects originated by the laser-dressing on the donor and exciton peack energies in quantum-well heterostructures, and show that they may be quite considerable and observable.
In the present work, we perform a comparison of theoretical approaches involving Coulomb-interaction corrections within the Hartree–Fock approximation and the renormalized dressed-band scheme in the large detuning limit. We focus on the well-studied optical Stark shift of the exciton peak in bulk and GaAs–(Ga,Al)As semiconductor quantum wells. It is argued that the Hartree–Fock scheme has severe limitations concerning its application to real experimental situations, even in the simplest laser field–perturbative regime. It is also shown, through a comparison between experiments and a three-band Kane-dressed GaAs–(Ga,Al)As quantum well calculation, that a proper treatment of band structure and confinement effects due to the quantum well is of fundamental importance in a theoretical understanding of Stark shift experimental measurements, and that the renormalized dressed-band approach is a very convenient tool to treat, in the large detuning limit, processes involving the laser–semiconductor interaction in low-dimensional heterostructures.
We study the effects of a laser on the splitting of the lowest electronic states of a pair of two-dimensional (2D) GaAs-(Ga,Al)As coupled quantum dots, in the presence of a homogeneous external magnetic field. The interaction of light with the 2D quantum dots is treated within a dressed-band approach in which a two-band scheme is used to model the GaAs bulk semiconductor whereas the interaction with the laser field is treated through the renormalization of the semiconductor energy gap and conduction/valence effective masses. This approach is valid far from resonances and has been successfully used to treat other confined semiconductor heterostructures. We focus our attention on the splitting of the lowest singlet and triplet states and on their double occupation probability. We analyze the exchange coupling (J) in the effective Heisenberg model as a function of the laser field and its detuning, as well as of the magnetic field (B) within the Heitler-London approximation of molecular physics. We find that due to the electronic confinement the laser may play a role similar to the external magnetic field in the qualitative behavior of the exchange parameter J. Furthermore, the presence of the laser may assure both the sizable exchange coupling and the vanishingly small double occupation probability required for efficient quantum computer operations, even in the absence of an external magnetic field. Besides being of fundamental interest, these features may be used as an efficient two-qubit gate control.