We study the quantum-well magnetoexcitons by the variational method in the strong coupling regime of excitons with microcavity photons. In such strong coupling regime, we find that the coupling between the exciton internal state and center of mass motion can be neglected. Through the calculations, we find that the magnetic field can reduce the exciton exchange interaction to 30% as Lw=30 nm with Lw being the quantum well width. This is in contrast to the magnetic-field enhancement in the exciton Rabi splitting. In this work, we obtain that a magnetic field can enhance the exciton Rabi splitting up to 1.6 times in the case of Lw=30 nm. They both originate from the local enhancement in the exciton internal state due to the magnetic field. In addition, we analyze the behavior of the magnetic response of the exciton energy, Rabi splitting, and exchange interaction in manipulating the polariton parametric scattering, and widening the microcavity applications.We study the quantum-well magnetoexcitons by the variational method in the strong coupling regime of excitons with microcavity photons. In such strong coupling regime, we find that the coupling between the exciton internal state and center of mass motion can be neglected. Through the calculations, we find that the magnetic field can reduce the exciton exchange interaction to 30% as Lw=30 nm with Lw being the quantum well width. This is in contrast to the magnetic-field enhancement in the exciton Rabi splitting. In this work, we obtain that a magnetic field can enhance the exciton Rabi splitting up to 1.6 times in the case of Lw=30 nm. They both originate from the local enhancement in the exciton internal state due to the magnetic field. In addition, we analyze the behavior of the magnetic response of the exciton energy, Rabi splitting, and exchange interaction in manipulating the polariton parametric scattering, and widening the microcavity applications.

Journal of Applied PhysicsMar 1, 201029 citations

Collective states of excitons in semiconductors

Михаил Михайлович Глазов, Robert A. Suris

Uspekhi Fizicheskih NaukOct 1, 20195 citations

Renormalized frequency shift of superradiant excitons in thin semiconductor films

Yung-Chang Lee, Der-San Chuu, Wai‐Ning Mei

The radiative frequency shift of an exciton in a thin semiconductor film, like its radiative level width, is shown to be superradiatively enhanced. Unlike the latter, however, a finite frequency shift can only be obtained after proper renormalization for the correlated system. The shift is found to be inversely proportional to the square of the factor ${\mathit{k}}_{0}$ d and proportional to the film thickness T, ${\mathit{k}}_{0}$ = ${\mathit{E}}_{\mathbf{q}\mathit{n}}$ /\ensuremath{\Elzxh}c, ${\mathit{E}}_{\mathbf{q}\mathit{n}}$ being the exciton energy gap and d the lattice constant of the semiconductor. Therefore, the coherent frequency shift can be observed experimentally if one varies the thickness, or the exciton energy gap ${\mathit{E}}_{\mathbf{q}\mathit{n}}$ by imposing high pressure.The radiative frequency shift of an exciton in a thin semiconductor film, like its radiative level width, is shown to be superradiatively enhanced. Unlike the latter, however, a finite frequency shift can only be obtained after proper renormalization for the correlated system. The shift is found to be inversely proportional to the square of the factor ${\mathit{k}}_{0}$d and proportional to the film thickness T, ${\mathit{k}}_{0}$=${\mathit{E}}_{\mathbf{q}\mathit{n}}$/\ensuremath{\Elzxh}c, ${\mathit{E}}_{\mathbf{q}\mathit{n}}$ being the exciton energy gap and d the lattice constant of the semiconductor. Therefore, the coherent frequency shift can be observed experimentally if one varies the thickness, or the exciton energy gap ${\mathit{E}}_{\mathbf{q}\mathit{n}}$ by imposing high pressure.

Physical Review LettersAug 17, 19929 citations

Magnetic Excitons

Jean-Louis Basdevant, Jean Dalibard

Advanced texts in physicsJan 1, 20000 citations

{\mathit{k}}_{0}

d and proportional to the film thickness T,

{\mathit{k}}_{0}

{\mathit{E}}_{\mathbf{q}\mathit{n}}

/\ensuremath{\Elzxh}c,

{\mathit{E}}_{\mathbf{q}\mathit{n}}

being the exciton energy gap and d the lattice constant of the semiconductor. Therefore, the coherent frequency shift can be observed experimentally if one varies the thickness, or the exciton energy gap

{\mathit{E}}_{\mathbf{q}\mathit{n}}

by imposing high pressure.