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Journal of Applied Physics

IF impedance and mixer gain of NbN hot electron bolometers

J. Kooi, J. J. A. Baselmans, Merlijn Hajenius, J. R. Gao, T. M. Klapwijk, Pieter Dieleman, Andrey M. Baryshev, Gert J. de Lange

Published Feb 15, 2007• 36 citations
Publisher

Abstract

The intermediate frequency (IF) characteristics, the frequency dependent IF impedance, and the mixer conversion gain of a small area hot electron bolometer (HEB) have been measured and modeled. The device used is a twin slot antenna coupled NbN HEB mixer with a bridge area of 1×0.15μm2, and a critical temperature of 8.3K. In the experiment the local oscillator frequency was 1.300THz, and the (IF) 0.05–10GHz. We find that the measured data can be described in a self-consistent manner with a thin film model presented by Nebosis et al. [Proceedings of the Seventh International Symposium on Space Terahertz Technology, Charlottesville, VA, 1996 (unpublished), pp. 601–613], that is based on the two temperature electron-phonon heat balance equations of Perrin-Vanneste [J. Phys. (Paris) 48, 1311 (1987)]. From these results the thermal time constant, governing the gain bandwidth of HEB mixers, is observed to be a function of the electron-phonon scattering time, phonon escape time, and the electron temperature. From the developed theory the maximum predicted gain bandwidth for a NbN HEB is found to be 5.5–6GHz. In contrast, the gain bandwidth of the device under discussion was measured to be ∼2.3GHz which, consistent with the outlined theory, is attributed to a somewhat low critical temperature and nonoptimal film thickness (6nm).

DOI
10.1063/1.2400086

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NbN hot electron bolometer (HEB) mixers are at this moment the best heterodyne detectors for frequencies above 1 THz. However, the fabrication procedure of these devices is such that the quality of the interface between the NbN superconducting film and the contact structure is not under good control. This results in a contact resistance between the NbN bolometer and the contact pad. We compare identical bolometers, with different NbN - contact pad interfaces, coupled with a spiral antenna. We find that cleaning the NbN interface and adding a thin additional superconductor prior to the gold contact deposition improves the noise temperature and the bandwidth of the HEB mixers with more than a factor of 2. We obtain a DSB noise temperature of 950 K at 2.5 THz and a Gain bandwidth of 5-6 GHz. For use in real receiver systems we design small volume (0.15x1 micron) HEB mixers with a twin slot antenna. We find that these mixers combine good sensitivity (900 K at 1.6 THz) with low LO power requirement, which is 160 - 240 nW at the Si lens of the mixer. This value is larger than expected from the isothermal technique and the known losses in the lens by a factor of 3-3.5.

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We report the results of the bandwidth measurements of NbN hot-electron bolometers, perfomied in the terahertz frequency domain at 140 GHz and 660 GHz and in time domain in the optical range at the wavelength of 395 nm.. Our studies were done on 3.5-nm-thick NbN films evaporated on sapphire substrates and patterned into ilin-size microbridges. In order to measure the gain bandwidth, we used two identical BWOs (140 or 660 GHz), one functioning as a local oscillator and the other as a signal source. The bandwidth we achieved was 3.5-4 GHz at 4.2 K with the optimal LO and DC biases. Time-domain measurements with a resolution below 300 fs were performed using an electro-optic sampling system, in the temperature range between 4.2 K to 9 K at various values of the bias current and optical power. The obtained response time of the NbN hot-electron bolometer to —100fs-wide Ti:sapphire laser pulses was about 27 ps, what corresponds to the 5.9 GHz gain bandwidth. Introduction The bandwidth of hot-electron bolometer (HEB) mixers has reached values which are record for bolometers. The gain bandwidth for phonon-cooled NbN HEB mixers of 4 GHz for 140 GHz and 650 GHz frequencies [1, 2] and the noise bandwidth of 8 GHz for 650 GHz [2] have been demonstrated. For diffusion-cooled Nb HEB mixers, the bandwidth has reached 6 GHz, when measured at 20--40 GHz [3]. However, there is a definite practical interest to even further extend the bandwidth of these devices. The possibilities of the HEB mixer technology in this direction are far from being exhausted. For example, the future of the NbN HEB technology requires that critical temperature Tc > 10 K and critical current density j c > 10 6 Akm at 4.2 K are simultaneously obtained for d < 3 nm-thick films M. The reduction of the optimal power of the local oscillator PLID below 100 nW leads to the decrease of the device length down to L < 0.2 pm, which, in turn, should bring an additional cooling channel for hot electrons—diffusion into metal contacts and a further bandwidth extension.

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The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB.

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The intermediate frequency (IF) characteristics, the frequency dependent IF impedance, and the mixer conversion gain of a small area hot electron bolometer (HEB) have been measured and modeled. The device used is a twin slot antenna coupled NbN HEB mixer with a bridge area of 1×0.15μm2, and a critical temperature of 8.3K. In the experiment the local oscillator frequency was 1.300THz, and the (IF) 0.05–10GHz. We find that the measured data can be described in a self-consistent manner with a thin film model presented by Nebosis et al. [Proceedings of the Seventh International Symposium on Space Terahertz Technology, Charlottesville, VA, 1996 (unpublished), pp. 601–613], that is based on the two temperature electron-phonon heat balance equations of Perrin-Vanneste [J. Phys. (Paris) 48, 1311 (1987)]. From these results the thermal time constant, governing the gain bandwidth of HEB mixers, is observed to be a function of the electron-phonon scattering time, phonon escape time, and the electron temperature. From the developed theory the maximum predicted gain bandwidth for a NbN HEB is found to be 5.5–6GHz. In contrast, the gain bandwidth of the device under discussion was measured to be ∼2.3GHz which, consistent with the outlined theory, is attributed to a somewhat low critical temperature and nonoptimal film thickness (6nm).
NbN hot electron bolometer (HEB) mixers are at this moment the best heterodyne detectors for frequencies above 1 THz. However, the fabrication procedure of these devices is such that the quality of the interface between the NbN superconducting film and the contact structure is not under good control. This results in a contact resistance between the NbN bolometer and the contact pad. We compare identical bolometers, with different NbN - contact pad interfaces, coupled with a spiral antenna. We find that cleaning the NbN interface and adding a thin additional superconductor prior to the gold contact deposition improves the noise temperature and the bandwidth of the HEB mixers with more than a factor of 2. We obtain a DSB noise temperature of 950 K at 2.5 THz and a Gain bandwidth of 5-6 GHz. For use in real receiver systems we design small volume (0.15x1 micron) HEB mixers with a twin slot antenna. We find that these mixers combine good sensitivity (900 K at 1.6 THz) with low LO power requirement, which is 160 - 240 nW at the Si lens of the mixer. This value is larger than expected from the isothermal technique and the known losses in the lens by a factor of 3-3.5.
We report the results of the bandwidth measurements of NbN hot-electron bolometers, perfomied in the terahertz frequency domain at 140 GHz and 660 GHz and in time domain in the optical range at the wavelength of 395 nm.. Our studies were done on 3.5-nm-thick NbN films evaporated on sapphire substrates and patterned into ilin-size microbridges. In order to measure the gain bandwidth, we used two identical BWOs (140 or 660 GHz), one functioning as a local oscillator and the other as a signal source. The bandwidth we achieved was 3.5-4 GHz at 4.2 K with the optimal LO and DC biases. Time-domain measurements with a resolution below 300 fs were performed using an electro-optic sampling system, in the temperature range between 4.2 K to 9 K at various values of the bias current and optical power. The obtained response time of the NbN hot-electron bolometer to —100fs-wide Ti:sapphire laser pulses was about 27 ps, what corresponds to the 5.9 GHz gain bandwidth. Introduction The bandwidth of hot-electron bolometer (HEB) mixers has reached values which are record for bolometers. The gain bandwidth for phonon-cooled NbN HEB mixers of 4 GHz for 140 GHz and 650 GHz frequencies [1, 2] and the noise bandwidth of 8 GHz for 650 GHz [2] have been demonstrated. For diffusion-cooled Nb HEB mixers, the bandwidth has reached 6 GHz, when measured at 20--40 GHz [3]. However, there is a definite practical interest to even further extend the bandwidth of these devices. The possibilities of the HEB mixer technology in this direction are far from being exhausted. For example, the future of the NbN HEB technology requires that critical temperature Tc > 10 K and critical current density j c > 10 6 Akm at 4.2 K are simultaneously obtained for d < 3 nm-thick films M. The reduction of the optimal power of the local oscillator PLID below 100 nW leads to the decrease of the device length down to L < 0.2 pm, which, in turn, should bring an additional cooling channel for hot electrons—diffusion into metal contacts and a further bandwidth extension.
The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 μ wide and 2 μ long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB.
The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB.
The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.