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The European Physical Journal D

Third harmonic enhancement due to Fano interference in semiconductor quantum well

J. L. Luo, Yueping Niu, Hui Sun, N. Cui, Shiqi Jin, Shuang Gong, H. J. Zhang

Published Oct 27, 2008• 2 citations
Publisher
DOI
10.1140/epjd/e2008-00198-7

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Enhanced fifth-order nonlinearity with Fano interference is theoretically studied in asymmetric double quantum wells. The resonant tunneling induces constructive interference for third- and fifth-order nonlinearities. Their competition causes a transparency window at some frequency detuning, where the fifth-order refractive index can be simultaneously enhanced by Fano interference. Simulation results show that fifth-order nonlinearity can be enhanced by about 10 times compared to that without the Fano effect. Also, the influence of different strengths of resonant tunneling coupling and Fano interference on enhanced high-order nonlinearity is discussed.