van der Waals interactions between atoms and dielectric surfaces are reinvestigated. To describe the nonretarded interaction potential between a dispersive dielectric surface and an atom in an arbitrary internal energy state, we derive a general expression in terms of an integral, over real frequency, of the combined atom and surface polarizabilities. It is shown that, for excited atoms, the expression is equivalent to the one obtained by Wylie and Sipe [Phys. Rev. A 32, 2030 (1985)]. We thus demonstrate how to extend this approach to excited atoms interacting with birefringent dielectrics. For isotropic dielectrics, a method of integration in closed form allows us to derive an approximate formula for the van der Waals interaction constant in terms of resonance frequencies and oscillator strengths of both the atom and the dielectric. Frequency-dependent ``dielectric reflection'' coefficients are introduced for virtual atomic dipole couplings either in absorption or in emission. In absorption, the reflection coefficient is always positive and smaller than unity. In emission, it may take arbitrary values, positive or negative (corresponding to van der Waals repulsion). Such a behavior is shown to be related to resonant excitation exchange between the atomic system and the dielectric medium, when an atomic transition frequency gets in resonance with a dielectric absorption band. Numerical calculations performed for the cesium-sapphire system are shown to be in good agreement with data obtained by selective-reflection spectroscopy. Finally, experimental tests of the birefringent character of the sapphire response are discussed.
Selective reflection spectroscopy at an interface with a low-density resonant vapor, especially when combined with a frequency modulation technique, is a high-resolution Doppler-free tool for probing atoms interacting with a surface. We analyze different types of relevant surface interaction, emphasizing the spectral consequences of a van der Waals surface attraction associated to a
z−3 potential dependence (
z: distance to the wall). We present detailed results of two series of experiments at a Cs vapor/dielectric window interface on the 6S
1/2-6P
3/2 (
λ=852 nm) resonance line and on the 6S
1/2-7P second resonance line (
λ=455 nm and 459 nm). Lineshape analysis at various pressures consistently shows that a van der Waals-type surface attraction has to be considered to interpret strong lineshape distortions and resonance shift. The attractive strengths are found to be equal respectively to
≈2 kHz
μm
3 and
≈20 kHz
μm
3, independently of the considered hyperfine component, within the experimental accuracy. It yields also typical parameters of pressure broadening and shift, which are shown to originate in collisional processes, at densities where the medium is opaque. Theoretical expectations for the VW strength are discussed on the basis of the results of atomic theory. The predicted values are smaller, by a typical factor of 2, than those deduced from the experiments. The validity of the theory, when applied to a dielectric interface, is discussed and seems questionable when the frequency of virtual atomic transitions involved in the van der Waals attraction potential lies in the dielectric window absorption range.