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Journal of Applied Physics

Electromagnetic properties of thin-film transformer-coupled superconducting tunnel junctions

Thomas F. Finnegan, V. Lacquaniti, R. Vaglio

Published Sep 1, 1981• 0 citations
Publisher

Abstract

Multisection superconducting microstrip transformers with designed output impedances below 0.1 Ω have been fabricated via precise photolithographic techniques to investigate the electromagnetic properties of Nb-Nb oxide-Pb tunnel junctions. The low-impedance transformer sections incorporate a rf sputtered thin-film Ta-oxide dielectric, and the reproducible external coupling achievable with this type of geometry makes possible the systematic investigation of electromagnetic device parameters as a function of tunneling oxide thickness.

DOI
10.1063/1.329487

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Multisection superconducting microstrip transformers with designed output impedances below 0.1 Ω have been fabricated via precise photolithographic techniques to investigate the electromagnetic properties of Nb-Nb oxide-Pb tunnel junctions. The low-impedance transformer sections incorporate a rf sputtered thin-film Ta-oxide dielectric, and the reproducible external coupling achievable with this type of geometry makes possible the systematic investigation of electromagnetic device parameters as a function of tunneling oxide thickness.
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A certain way of coupling to the thin-film Josephson tunneling junction has been studied. The coupling structure comprises a superconducting stripline which is terminated to the edge of the Nb-oxide-Pb junction. A mismatch of 23 dB has been obtained so far between the signal source and the junction at X-band compared to the earlier estimates of 40 dB between conventional size outer circuits and the junction. Prospects for improving the coupling are good. Methods of estimating the voltage and power which are coupled to the junction are given.
A procedure is described for fabricating thin film Nb/Nb oxide/Pb-alloy Josephson tunnel junctions that satisfies the principal requirements for integrated circuit design and fabrication. A deposited Nb film, evaporated from an e-gun heated source, was patterned by chemical etching to form a base electrode. A junction was completed by plasma etching and plasma oxidizing the Nb junction area to form a tunnel barrier and by depositing a Pb alloy counterelectrode. Josephson tunnel junctions with Nb/Nb oxide/Pb-Au-In structures were prepared with low excess subgap currents in the current-voltage (I-V) curve and with reproducible and stable I-V characteristics. Variations in junction current density from run-run were ± 15%. Seven 3-junction interferomeeters out of a population of 50,000 were shorted (99.99% yield) for causes not immediately attributable to photoresist-related defects. No changes in Josephson current were detected after thermal cycling 17,000 interferometers 1,800 × between room temperature and 4.2°K, after storing them for 2 years at 5°C, or after annealing 5,000 interferometers for 4.5 hours at 70°C.
We report on fabrication and photon detection experiments of Nb/Al and Ta/Al superconducting tunnel junctions (STJs). 5-layer STJ thin-films were fabricated using UV photolithography, DC magnetron sputtering, reactive ion etching, and chemical vapor deposition techniques. STJs with 4 different sizes (20, 40, 60 and 80 μm) were deposited on sapphire substrates and tested in a two stage adiabatic demagnetization refrigerator with an operating temperature ~ 50 mK. Photons from different light sources are injected into the junctions via an optical fiber in combination with a monochromator which can produce photons from 30 nm to 550 nm with 0.1 nm resolution. The junction is read out through a charge-sensitive preamplifier followed by a shaping stage. We have measured some performance indicators and quality factors of the junctions from resultant I-V curves.