Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

International Conference on Progress in Nonequilibrium Green's Functions (PNGF)

EXCITONIC QUANTUM COHERENCES AND CORRELATIONS IN SEMICONDUCTOR QUANTUM WELLS

Rolf H. Binder, N. H. Kwong, I. Rumyantsev, Zhenshan S. Yang, Ryu Takayama

Published May 1, 2003• 0 citations
Publisher
DOI
10.1142/9789812705129_0026

Related papers

THEORY OF EXCITONIC OPTICAL NONLINEARITY IN BIASED SEMICONDUCTOR QUANTUM WELLS

Tohya Hiroshima

•Jul 18, 1988•0 citations

Excitonic Optical Nonlinearities in Semiconductor Quantum Wells

D. S. Chemla

Springer eBooks•Jan 1, 1988•1 citation

Nonlinear Interactions and Excitonic Effects in Semiconductor Quantum Wells

D. S. Chemla

Springer proceedings in physics•Jan 1, 1986•13 citations

EXCITONIC STIMULATED RECOMBINATION IN LOW TEMPERATURE GaAs/AlGaAs MULTIPLE QUANTUM WELLS

J. L. Oudar, Juan Ariel Levenson

Recent studies of the transient behavior of absorption saturation in low temperature Multiple Quantum Wells (MQW) samples have revealed a surprisingly fast recovery of absorption (within 10 ps at 15 K) after excitation by intense ultrashort light pulses1. This has been attributed to the effect of the large stimulated recombination rate caused by amplified spontaneous luminescence guided along the MQW structure, as confirmed by streak camera observations of the edge-emitted luminescence1, and by measurements of time-resolved luminescence spectra with subpicosecond resolution2. This effect could be used to increase the speed of optical gates based on absorption saturation or carrier-induced nonlinear refraction, but a more complete understanding of the mechanisms involved is clearly needed in order to evaluate the interest of this approach.

•Jul 18, 1988•0 citations

Coherence and correlation in laser excitation of semiconductor quantum wells

Lu Jeu Sham, M. Z. Maialle, Th. Östreich +1 more

Il Nuovo Cimento D•Nov 1, 1995•1 citation

THE STRENGTH OF FANO INTERFERENCE EFFECTS ON THE PROBE ABSORPTION IN ASYMMETRIC SEMICONDUCTOR QUANTUM WELLS

Zhiping Wang

We investigate the strength of Fano interference effects on the probe absorption spectra in asymmetric semiconductor quantum wells driven coherently by a probe laser field. We find that the probe absorption can be dramatically reduced due to the strength of the Fano interference, and the effect of the energy splitting on the probe absorption is also discussed. Our study is much more practical than its atomic counterpart due to its flexible design and the controllable interference strength. Thus it may provide some possibilities for technological applications in optoelectronics and solid-state quantum information science.

Modern Physics Letters B•Nov 10, 2009•1 citation
Recent studies of the transient behavior of absorption saturation in low temperature Multiple Quantum Wells (MQW) samples have revealed a surprisingly fast recovery of absorption (within 10 ps at 15 K) after excitation by intense ultrashort light pulses1. This has been attributed to the effect of the large stimulated recombination rate caused by amplified spontaneous luminescence guided along the MQW structure, as confirmed by streak camera observations of the edge-emitted luminescence1, and by measurements of time-resolved luminescence spectra with subpicosecond resolution2. This effect could be used to increase the speed of optical gates based on absorption saturation or carrier-induced nonlinear refraction, but a more complete understanding of the mechanisms involved is clearly needed in order to evaluate the interest of this approach.
We investigate the strength of Fano interference effects on the probe absorption spectra in asymmetric semiconductor quantum wells driven coherently by a probe laser field. We find that the probe absorption can be dramatically reduced due to the strength of the Fano interference, and the effect of the energy splitting on the probe absorption is also discussed. Our study is much more practical than its atomic counterpart due to its flexible design and the controllable interference strength. Thus it may provide some possibilities for technological applications in optoelectronics and solid-state quantum information science.