Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Journal of Luminescence

Coherent control of electron–phonon scattering and the dephasing process in gallium arsenide multiple quantum wells

Yoshihiro Ogawa, D. Yokoyama, F. Minami, Naokatsu Yamamoto

Published Dec 1, 2007• 0 citations
Publisher
DOI
10.1016/j.jlumin.2007.11.026

Related papers

Suppression of decoherence in gallium arsenide multiple quantum wells by means of bang–bang control

K. Takasago, Yoshihiro Ogawa, F. Minami

Journal of Luminescence•Jan 29, 2008•1 citation

Suppression of decoherence in gallium arsenide multiple quantum wells by means of bang–bang control

和浩 高砂, Yoshihiro Ogawa, FUJIO MINAMI

•May 1, 2008•0 citations

Coherent control of dephasing process and many-body interactions among excitons in GaAs multiple quantum wells

Yoshihiro Ogawa, F. Minami, Naokatsu Yamamoto

Journal of Luminescence•May 14, 2009•3 citations

Coherent control of Non-Markovian Interaction of Exciton-Folded Acoustic Phonon in GaAs Multiple Quantum Wells

南不二雄, F. Minami

•May 1, 2007•0 citations

Spontaneous coherence, kinetics and pattern formation in cold exciton gases in gallium arsenide/aluminum gallium arsenide coupled quantum wells

Sen Yang

•Jan 1, 2009•0 citations

Effects of optically induced coherences and non-radiative coherences in the nonlinear optical response of gallium arsenide.

Kyle B. Ferrio

Optically induced coherences reveal key features of nonlinearities in the optical response of semiconductors and can be employed to obtain information about dynamical processes via such techniques as transient four-wave mixing and differential transmission. This thesis presents experimental observations of three previously unrecognized aspects of coherent nonlinear optical phenomena occurring in gallium arsenide and multiple quantum wells: excitation-induced dephasing, two-photon biexcitonic coherence, and electronic Raman coherence. Results are analyzed using optical Bloch equations, which emphasize the potential generalization to other semiconductor systems. Excitation-induced dephasing is similar to classical line broadening. The work in this thesis shows for the first time that this incoherent effect is directly responsible for the dominant coherent optical nonlinearity in bulk gallium arsenide. Exact analytic models show that excitation-induced dephasing accounts for the previously unexplained polarization and density dependence of four-wave mixing signals obtained at the 1s exciton resonances in gallium arsenide. This thesis also presents the first observation of the two-photon biexcitonic coherence in a gallium arsenide multiple quantum well using a modified Michelson phase-conjugate interferometer to directly observe the 770-Terahertz oscillation of the nonradiative superposition of the electronic ground state and the biexciton state. The contribution of the two-photon coherence to the nonlinear optical response is thereby confirmed, in addition to the well-known stepwise biexcitonic response. Finally, the short-lived electronic Raman coherence between the light- and heavy-hole 1s excitons in gallium arsenide is conclusively demonstrated for the first time. The Raman coherence provides direct access to dephasing processes not detectable in conventional linear spectroscopy. Similar non-radiative coherences are related to population trapping, electromagnetically induced transparency, and lasing without inversion in atomic systems, and the new observations in gallium arsenide suggest that analogous phenomena may occur in semiconductors.

•Jan 1, 1996•0 citations
Optically induced coherences reveal key features of nonlinearities in the optical response of semiconductors and can be employed to obtain information about dynamical processes via such techniques as transient four-wave mixing and differential transmission. This thesis presents experimental observations of three previously unrecognized aspects of coherent nonlinear optical phenomena occurring in gallium arsenide and multiple quantum wells: excitation-induced dephasing, two-photon biexcitonic coherence, and electronic Raman coherence. Results are analyzed using optical Bloch equations, which emphasize the potential generalization to other semiconductor systems. Excitation-induced dephasing is similar to classical line broadening. The work in this thesis shows for the first time that this incoherent effect is directly responsible for the dominant coherent optical nonlinearity in bulk gallium arsenide. Exact analytic models show that excitation-induced dephasing accounts for the previously unexplained polarization and density dependence of four-wave mixing signals obtained at the 1s exciton resonances in gallium arsenide. This thesis also presents the first observation of the two-photon biexcitonic coherence in a gallium arsenide multiple quantum well using a modified Michelson phase-conjugate interferometer to directly observe the 770-Terahertz oscillation of the nonradiative superposition of the electronic ground state and the biexciton state. The contribution of the two-photon coherence to the nonlinear optical response is thereby confirmed, in addition to the well-known stepwise biexcitonic response. Finally, the short-lived electronic Raman coherence between the light- and heavy-hole 1s excitons in gallium arsenide is conclusively demonstrated for the first time. The Raman coherence provides direct access to dephasing processes not detectable in conventional linear spectroscopy. Similar non-radiative coherences are related to population trapping, electromagnetically induced transparency, and lasing without inversion in atomic systems, and the new observations in gallium arsenide suggest that analogous phenomena may occur in semiconductors.