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Optics Communications

Optical bistability due to local-field effects in a single semiconductor quantum well

Ansheng Liu, Ole Keller

Published Oct 1, 1995• 8 citations
Publisher
DOI
10.1016/0030-4018(95)00485-q

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The effects of optical field on the phenomenon of optical bistability (OB) are investigated in a K-type semiconductor double quantum well (SDQW) under various parametric conditions. It is shown that the OB threshold can be manipulated by increasing the intensity of coupling field. The dependence of the shift of OB hysteresis curve on probe wavelength detuning is then explored. In order to demonstrate controllability of the OB in this SDQW, we compare the OB features of three different configurations which could arise in this SDQW scheme, i.e., K-type, Y-type, and inverted Y-type systems. The controllability of this semiconductor nanostructure medium makes the presented OB scheme more valuable for applications in all-optical switches, information storage, and logic circuits of all optical information processing.
Abstract Equations of motion for the excitation rate of electron‐hole pairs in semiconductor microcrystals are derived for excitation with picosecond pulses. The inhomogeneous and nonlocal character of the polarization is taken into account. The result are equations describing the macroscopic susceptibility of a semiconductor‐doped glass. On this basis different possibilities for resonatorless optical bistability due to local field effects are discussed and necessary conditions for its appearence are derived.