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Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

Aluminium free active region 780nm tapered semiconductor optical amplifiers for Rubidium pumping

A. Jammot, J. Bébé Manga Lobé, Marco Lamponi, Y. Robert, E. Vinet, M. Lecomte, M. Garcia, O. Parillaud, M. Krakowski

Published May 1, 2013• 1 citation
Publisher

Abstract

Here we present a new tapered semiconductor optical amplifier (SOA) structure that exhibits more than 600 mW output power at a wavelength of 780 nm.
DOI
10.1109/cleoe-iqec.2013.6800735

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In this paper,we report an optical power amplifier operating at 780 nm.The optical power amplifier is a semiconductor tapered amplifier(Eagleyard,EYP-TPA-0780-01000);the output power from the optical power amplifier is up to about 600 mW when a seeding laser beam with a power of 25 mW is injected into the amplifier.After beam shaping by lens,frequency shifting by an acousto-optical modulator(AOM) and spatial filtering by a single-mode fiber,the output power is up to 110 mW.The presented optical power amplifier may be applied into the MOT for achieving a larger number of trapped atoms.
We present a novel design of a compact, stable, and easy-adjustable semiconductor optical amplifier (SOA) system.This SOA system is capable of providing up to 560-mW laser power at the wavelength of 852 nm.For the continuous-wave (CW) seeding laser, the amplification gain can reach 18 dB.We add amplitude modulation onto the CW laser and measure the modulation amplification between seeding and output laser.The amplification gain remains constant within the frequency range from 10 Hz to 1 MHz.The whole system could work in ultra-stable condition: for CW seeding laser, the fluctuation of output power is less than 0.33% in several hours.
Two methods using a laser-diode tapered amplifier to produce high-power, high-efficiency optical frequency sidebands over a wide tunable frequency range are studied and compared. For a total output of 500 mW at 811 nm, 20% of the power can be placed in each of the first-order sidebands. Functionality and characterization are presented within the sideband frequency region of 0.8-2.3 GHz, and it is shown that both methods can be applied beyond this frequency range. These methods provide a versatile and effective tool for atomic physics experiments.
In contrast to absorbers, where the delay time via wave mixing saturates to its maximum with increasing device length due to decay of pump power along the device, in semiconductor optical amplifiers (SOAs) the delay time increases with the device length and is limited by the corresponding growth of the SOA gain, which can lead to unacceptable amplified stimulated emission in the SOA. The number of pulses which can be stored in an SOA, defined by the gain and group velocity dispersion, also is given ultimately by this SOA gain limitation, and is estimated between one and two.