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The Journal of Chemical Physics

Three-dimensional electronic spectroscopy of excitons in GaAs quantum wells

Daniel B. Turner, Katherine W. Stone, Kenan Gündoğdu, Keith Adam Nelson

Published Oct 13, 2009• 98 citations
Publisher

Abstract

We demonstrate three-dimensional (3D) electronic Fourier transform spectroscopy of GaAs quantum wells using four fully phase-coherent, noncollinear optical fields. Since the full complex signal field is measured as a function of all three time intervals, nearly every peak in the resulting 3D spectral solid arises from a distinguishable sequence of transitions represented by a single Feynman pathway. We use the 3D spectral peaks to separate two pathways involving weakly bound mixed biexcitons generated in different time orders. In the process, we reveal a peak that was previously obscured by a correlated but unbound exciton pair coherence. We also demonstrate a calibration procedure for the carrier frequency which yields biexciton binding energy values with high accuracy.

DOI
10.1063/1.3245964

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We demonstrate three-dimensional (3D) electronic Fourier transform spectroscopy of GaAs quantum wells using four fully phase-coherent, noncollinear optical fields. Since the full complex signal field is measured as a function of all three time intervals, nearly every peak in the resulting 3D spectral solid arises from a distinguishable sequence of transitions represented by a single Feynman pathway. We use the 3D spectral peaks to separate two pathways involving weakly bound mixed biexcitons generated in different time orders. In the process, we reveal a peak that was previously obscured by a correlated but unbound exciton pair coherence. We also demonstrate a calibration procedure for the carrier frequency which yields biexciton binding energy values with high accuracy.
Multiple-quantum two-dimensional Fourier transform optical (2D FTOPT) spectroscopy was developed and conducted on GaAs quantum wells. Spatiotemporal femtosecond pulse shaping was used to control the optical phases and time delays of ultrashort pulses in multiple non-collinear beams so that fully coherent four-wave and higher-order mixing measurements could be conducted without delay stages, multiple interferometers, or any active phase control. Coherences of biexcitons, unbound but correlated exciton pairs, and excitons undergoing rephasing were observed directly.
Multiple-quantum two-dimensional Fourier transform optical (2D FTOPT) spectroscopy was developed and conducted on GaAs quantum wells. Spatiotemporal femtosecond pulse shaping was used to control the optical phases and time delays of ultrashort pulses in multiple non-collinear beams so that fully coherent four-wave and higher-order mixing measurements could be conducted without delay stages, multiple interferometers, or any active phase control. Coherences of biexcitons, unbound but correlated exciton pairs, and excitons undergoing rephasing were observed directly.
Transient four-wave mixing studies of bulk GaAs under conditions of broad bandwidth excitation of primarily interband transitions have enabled four-particle correlations tied to degenerate (exciton-exciton) and nondegenerate (exciton-carrier) interactions to be studied. Real two-dimensional Fourier-transform spectroscopy (2DFTS) spectra reveal a complex response at the heavy-hole exciton emission energy that varies with the absorption energy, ranging from dispersive on the diagonal through absorptive for low-energy interband transitions to dispersive with the opposite sign for interband transitions high above band gap. Simulations using a multilevel model augmented by many-body effects provide excellent agreement with the 2DFTS experiments and indicate that excitation-induced dephasing (EID) and excitation-induced shift (EIS) affect degenerate and nondegenerate interactions equivalently, with stronger exciton-carrier coupling relative to exciton-exciton coupling by approximately an order of magnitude. These simulations also indicate that EID effects are three times stronger than EIS in contributing to the coherent response of the semiconductor.