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Physical Review B

Temperature dependent resistivity in the low-resistance region for diffusive transport in two dimensions

D. J. W. Geldart, D. Neilson

Published Dec 28, 2004• 1 citation
Publisher

Abstract

The interpretation of the metal-insulator transition phenomena in disordered two-dimensional electron systems in terms of density-dependent scaling variables suggests the existence of a quantum critical point at some critical electron density. However a first principles scaling theory based on renormalization group (RG) methods predicts a strong temperature dependence of the dimensionless resistivity $\mathcal{R}(T)$, even at small $\mathcal{R}(T)$, that is not observed. The observed properties are in fact consistent with a weakly disordered Fermi liquid, and there are no indications of strong temperature dependence induced by scaling. While the RG expansion in a power series in $\mathcal{R}(T)$ has only been evaluated to lowest order, this should be sufficient to describe experiments in the region of very small $\mathcal{R}$. A further apparent anomaly is a return from metal-like to insulating-like behavior for increasing density. We explain these fundamental discrepancies between the first principles theory and experiment. We find that the $\mathcal{R}⪡1$ data in the currently attainable temperature range are in a weak scaling regime described by the logarithmic approximation. We independently determine the density dependent prefactor of the logarithm using data for the spin susceptibility and effective mass. We find good agreement between theory and experiment for $\mathcal{R}(T)$ in the diffusive regime. We point out that there are corrections to the leading logarithm approximation that should be observable at still lower temperatures.

DOI
10.1103/physrevb.70.235336

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The interpretation of the metal-insulator transition phenomena in disordered two-dimensional electron systems in terms of density-dependent scaling variables suggests the existence of a quantum critical point at some critical electron density. However a first principles scaling theory based on renormalization group (RG) methods predicts a strong temperature dependence of the dimensionless resistivity R(T)\mathcal{R}(T)R(T), even at small R(T)\mathcal{R}(T)R(T), that is not observed. The observed properties are in fact consistent with a weakly disordered Fermi liquid, and there are no indications of strong temperature dependence induced by scaling. While the RG expansion in a power series in R(T)\mathcal{R}(T)R(T) has only been evaluated to lowest order, this should be sufficient to describe experiments in the region of very small R\mathcal{R}R. A further apparent anomaly is a return from metal-like to insulating-like behavior for increasing density. We explain these fundamental discrepancies between the first principles theory and experiment. We find that the R⪡1\mathcal{R}⪡1R⪡1 data in the currently attainable temperature range are in a weak scaling regime described by the logarithmic approximation. We independently determine the density dependent prefactor of the logarithm using data for the spin susceptibility and effective mass. We find good agreement between theory and experiment for R(T)\mathcal{R}(T)R(T) in the diffusive regime. We point out that there are corrections to the leading logarithm approximation that should be observable at still lower temperatures.
We consider a two-component scaling picture for the resistivity of two-dimensional (2D) weakly disordered interacting electron systems at low temperature with the aim of describing both the vicinity of the bifurcation and the low resistance metallic regime in the same framework. We contrast the essential features of one-component and two-component scaling theories. We discuss why the conventional lowest order renormalization group equations do not show a bifurcation in 2D, and a semiempirical extension is proposed which does lead to bifurcation. Parameters, including the product $z\ensuremath{\nu},$ are determined by least squares fitting to experimental data. An excellent description is obtained for the temperature and density dependence of the resistance of silicon close to the separatrix. Implications of this two-component scaling picture for a quantum critical point are discussed.
We consider the Finkelstein action describing a system of spin-polarized or spinless electrons in $2+2\ensuremath{\epsilon}$ dimensions, in the presence of disorder as well as the Coulomb interactions. We extend the renormalization-group analysis of our previous work and evaluate the metal-insulator transition of the electron gas to second order in an $\ensuremath{\epsilon}$ expansion. We obtain the complete scaling behavior of physical observables like the conductivity and the specific heat with varying frequency, temperature, and/or electron density. We extend the results for the interacting electron gas in $2+2\ensuremath{\epsilon}$ dimensions to include the quantum critical behavior of the plateau transitions in the quantum Hall regime. Although these transitions have a very different microscopic origin and are controlled by a topological term in the action $(\ensuremath{\theta}$ term), the quantum critical behavior is in many ways the same in both cases. We show that the two independent critical exponents of the quantum Hall plateau transitions, previously denoted as $\ensuremath{\nu}$ and p, control not only the scaling behavior of the conductances ${\ensuremath{\sigma}}_{\mathrm{xx}}$ and ${\ensuremath{\sigma}}_{\mathrm{xy}}$ at finite temperatures T, but also the non-Fermi-liquid behavior of the specific heat ${(c}_{v}\ensuremath{\propto}{T}^{p}).$ To extract the numerical values of $\ensuremath{\nu}$ and p it is necessary to extend the experiments on transport to include the specific heat of the electron gas.
We reconcile the possible presence of a quantum critical point in metal insulator transition phenomena in two-dimensional electron systems with observed electronic properties in the low resistivity region which are those of a weakly disordered Fermi liquid. The central issue of whether the ground state of an interacting 2D electron system in the presence of weak potential scattering from disorder is a metal or an insulator remains unresolved. Additional new effects which may become important at extremely low electron densities are briefly mentioned.
The quantum phase transition observed experimentally in two-dimensional (2D) electron systems has been a subject of theoretical and experimental studies for almost 30 years. We suggest Gaussian approximation to the mean-field theory of the second-order phase transition to explain the experimental data. Our approach explains self-consistently the universal value of the critical exponent 3/2 (found after scaling measured resistivities on both sides of the transition as a function of temperature) as the result of the divergence of the correlation length when the electron density approaches the critical value. We also provide numerical evidence for the stretched exponential temperature dependence of the metallic phase's resistivities in a wide range of temperatures and show that it leads to correct qualitative results. Finally, we interpret the phase diagram on the density-temperature plane exhibiting the quantum critical point, quantum critical trajectory and two crossover lines. Our research presents a theoretical description of the seminal experimental results.
This chapter focuses on experimental results obtained in low-disordered strongly interacting two-dimensional (2D) electron systems; in particular in (100)-silicon metal-oxide-semiconductor field-effect transistors (MOSFET). It describes the additional confirmation in favor of zero-temperature zero-field metal-insulator transition is provided by magnetic and thermopower measurements. The chapter argues that the metal-insulator transition in silicon samples with very low level of disorder is driven by interactions. In a low-disordered 2D electron system in silicon MOSFETs, the resistivity at a certain "critical" electron density shows virtually no temperature dependence over a wide range of temperatures. In 2000, it was experimentally found that the ratio between the spin and the cyclotron splittings in silicon MOSFETs strongly increases at low electron densities. The strong enhancement of the spin susceptibility has indicated that at low electron densities, the system behaves well beyond the weakly interacting Fermi liquid.
The problem of disordered interacting electrons is considered. We study a model for a generic disordered Fermi liquid without cooper pairs and in the absence of any spin-flip mechanisms. We prove to within logarithmic accuracy that there is a stable renormalization-group fixed point to all orders in a loop expansion. We prove that the conductivity exponent at this fixed point is identically equal to zero, while the spin-diffusion constant scales to zero with an exponent \ensuremath{\gamma}=4+O(d-2). By an explicit two-loop calculation we then show that this fixed point is suppressed by logarithmic terms, but a sizeable scaling region persists. The main conclusion is that the metal-insulator transition is preceded on the metallic side by a near instability in the spin system. There is a scaling region leading from a spin-diffusion phase to a region of very slow spin transport. Throughout this scaling region the charge transport is unaffected. Experiments are discussed in the light of these results, and further experiments to test the theory are proposed.