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Conference on Lasers and Electro-Optics

Demonstration of Squeezing on chip

Avik Dutt, Kevin J. Luke, Sasikanth Manipatruni, Alexander L. Gaeta, P. Nussenzveig, Michal F. Lipson

Published Jan 1, 2013• 1 citation
Publisher

Abstract

We report the first observation of squeezing in an on chip integrated platform based on SiN Optical parametric oscillator ring resonator. We demonstrate 1.7 dB squeezing in the intensity difference between the signal and idler beams.
DOI
10.1364/cleo_qels.2013.qth5b.1

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Integrated nonlinear microring resonators are promising sources of bright twin-beams exhibiting intensity difference squeezing. To take advantage of the noise reduction of these quantum states, many applications require high squeezing levels. However, the attainable on-chip squeezing is constrained by the ratio of intrinsic to coupling loss, which is strongly related to design and fabrication limits. Here, we demonstrate a silicon nitride microring resonator engineered to enable a set of periodic strongly overcoupled resonances from which the estimated on-chip intensity difference squeezing is 11.8 dB, exceptionally high for an integrated device. Due to significant setup loss, we directly measure 1.4±0.2 dB of squeezing, corresponding to an on-chip level of 9.2±5.1 dB. In addition, the new, to the best of our knowledge, design inherently suppresses mode competition in the modes surrounding the twin-beams, enabling a constant high squeezing level up to moderate powers. These results represent a significant step toward the miniaturization of integrated devices whose performance benefits from surpassing the quantum noise limit using squeezed states, with particular relevance to sensing applications.