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Optics Communications

Influence of two-photon absorption on bistable switching in a silicon photonic crystal microcavity

Chao Li, Jun-Fang Wu, Wen‐Cheng Xu

Published Apr 12, 2010• 3 citations
Publisher
DOI
10.1016/j.optcom.2010.03.053

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We demonstrate extremely low-power all-optical bistability by utilizing silicon photonic crystal nanocavities, based on the plasma effect of carriers generated by two-photon absorption. Owing to the high quality factor and the small volume of the nanocavities, the photon density inside the cavity becomes extremely high, which leads to a large reduction in operation power. Optical bistable operation in a single nanocavity permits optical read-write memory operation, which opens the possibility of an integrated optical logic circuit on a single chip, based on photonic crystals. The demonstrated bistable threshold power is 0.4 mW with a set pulse energy of 74 fJ, at a switching speed of <100 ps.
The authors observe experimentally optical bistability enhanced through Fano interferences in high-Q localized silicon photonic crystal resonances (Q∼30000 and modal volume ∼0.98 cubic wavelengths). This phenomenon is analyzed through nonlinear coupled-mode formalism, including the interplay of χ(3) effects such as two-photon absorption and related free-carrier dynamics, and optical Kerr as well as thermal effects and linear losses. Experimental and theoretical results demonstrate Fano resonance based bistable states with switching thresholds of 185μW and 4.5fJ internally stored cavity energy (∼540fJ consumed energy) in silicon for scalable optical buffering and logic.
We observe experimentally optical bistability enhanced through Fano interferences in high-Q localized silicon photonic crystal resonances (Q ~ 30,000 and modal volume ~ 0.98 cubic wavelengths). This phenomenon is analyzed through nonlinear coupled-mode formalism, including the interplay of chi(3) effects such as two-photon absorption and related free-carrier dynamics, and optical Kerr as well as thermal effects and linear losses. Our experimental and theoretical results demonstrate for the first time Fano-resonance based bistable states with switching thresholds of 185 micro-Watt and 4.5 fJ internally stored cavity energy (~ 540 fJ consumed energy) in silicon for scalable optical buffering and logic.