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Coherent Control of Light Absorption and CarrierDynamics in Semiconductor Nanostructures

W. Pötz, Xuedong Hu

Published Jan 1, 1998• 1 citation
Publisher

Abstract

We present two examples of coherent control of inter(sub)band transitions in a semiconductor double well by coherent light sources. Accounting for the upper hole subband and two lowest electron subbands, a microscopic theoretical analysis shows that electron‐hole pair generation by a sub‐picosecond pump pulse can be controlled by the intensity and the phase of a dc microwave field which resonantly couples the two electron subbands. Light absorption can be either enhanced or reduced. Secondly, it is shown that proper combination of two pulsed laser fields allows control of electron inter(sub)band transitions and final‐state population, i.e., the formation of indirect versus direct excitons.

DOI
10.1155/1998/32057

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We present two examples of coherent control of inter(sub)band transitions in a semiconductor double well by coherent light sources. Accounting for the upper hole subband and two lowest electron subbands, a microscopic theoretical analysis shows that electron‐hole pair generation by a sub‐picosecond pump pulse can be controlled by the intensity and the phase of a dc microwave field which resonantly couples the two electron subbands. Light absorption can be either enhanced or reduced. Secondly, it is shown that proper combination of two pulsed laser fields allows control of electron inter(sub)band transitions and final‐state population, i.e., the formation of indirect versus direct excitons.
We investigate theoretically coherent control of optical absorption and emission (optical gain) in semiconductor double wells by use of two coherent light sources. Our analysis is based on a microscopic theory of optical excitation in semiconductors which accounts for many-body effects. Specifically, we show that electron–hole pair (exciton) formation in an asymmetric double well can be controlled by intensity and phase of a dc microwave (MW) field if the pulse duration lies below the MW-induced Rabi period. Similarly, resonant MW fields are shown to allow control of intersubband absorption and emission spectra of semiconductor heterostructures.
We study electronic transitions between a subband and a lower subband doublet which is driven by a coherent microwave (MW) field in a semiconductor double well structure. Within a microscopic three-band model, we show that variation of the MW phase allows manipulation of the optical gain provided the probe pulse duration is shorter than the period of the MW-field-generated interband polarization in the doublet. Moreover, we find that optical gain without inversion can be achieved in spite of subpicosecond dissipative mechanisms provided by electron-phonon coupling and electron tunneling into and out of the double well.
We present results for two coherent control schemes in semiconductor heterostructures obtained within Boltzmann- Bloch equations. The latter are obtained from Dyson's equation within the Keldysh nonequilibrium Green's function approach and allow a microscopic analysis of coherent control schemes in semiconductors. Here we focus on the coherent control of optical gain and longitudinal optical photon emission rates in intersubband transitions in a three-subband model of a biased asymmetric double well. We show that by coupling the two energetically close subbands with a coherent microwave field, we can induce coherence into the carriers in the double well, thus manipulating intersubband transitions. By adjusting the phase of the microwave field, we can achieve significant modification to the gain spectra for light pulses shorter than the period of the low frequency intersubband polarization. Similarly, LO- phonon induced intersubband transitions can be controlled due to quantum interference between electron-lattice and electron-light interactions.
Structural coherent control is used to design open semiconductor heterostructures whose intersubband absorption displays either single-slit or double-slit quantum interference. In this theoretical study we show that in the ``double-slit'' structure, optical intersubband absorption of a light pulse can be modified by adjustment of the phase of a control field. By careful choice of the steady-state subband population via charge transport through the heterostructure, an incident pump pulse can either be amplified or attenuated. This coherent control mechanism is absent in the ``single-slit'' structure. Our results and physical interpretation are based on a microscopic self-consistent semiclassical theory of the light-matter interaction in semiconductors and the use of a gauge which allows direct physical interpretation of the electron kinetic equations.
Optical interband excitonic absorption of semiconductor quantum wells (QW’s) driven by a coherent pump field is investigated on the basis of semiconductor Bloch equations. The pump field has a photon energy close to the intersubband spacing between the first two conduction subbands in the QW’s. An external weak optical field probes the interband transition. The excitonic effects and pump-induced population redistribution within the conduction subbands in the QW system are included. When the density of the electron–hole pairs in the QW structure is low, the pump field induces an Autler–Townes splitting of the exciton absorption spectrum. The split size and the peak positions of the absorption doublet depend not only on the pump frequency and intensity but also on the carrier density. As the density of the electron–hole pairs is increased, the split contrast (the ratio between the maximum and the minimum values) is decreased, because the exciton effect is suppressed at higher densities owing to the many-body screening.