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Canadian Journal of Physics

Externally stimulated excitonic system

Rajka P. Djajić-Jovanović, D. M. Ćirić, Momir Marinković, Bratislav S. Tosic

Published Feb 1, 1987• 2 citations
Publisher

Abstract

The behaviour of the excitonic system stimulated by an external microscopic electric field is analyzed. The mathematical analysis is applied using the Green function of the type [Formula: see text]. This opens the possibility of strictly applying Wick's theorem for the decoupling. The pairing of operators is performed for the same, as well as for different, moments of time. Using the Green function calculated in this way, we derive the dielectric constant and the refraction and absorption indices. It is shown that the presense of external stimulation shifts the principal absorption and refraction peaks towards higher frequencies, making them, at the same time, less prominent. Thus, the conclusion is that external stimulation cannot be used to construct better absorbers of the light energy although external stimulation is able to increase absorption as well as the refraction at frequencies higher than the resonant one.

DOI
10.1139/p87-025

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The behaviour of the excitonic system stimulated by an external microscopic electric field is analyzed. The mathematical analysis is applied using the Green function of the type [Formula: see text]. This opens the possibility of strictly applying Wick's theorem for the decoupling. The pairing of operators is performed for the same, as well as for different, moments of time. Using the Green function calculated in this way, we derive the dielectric constant and the refraction and absorption indices. It is shown that the presense of external stimulation shifts the principal absorption and refraction peaks towards higher frequencies, making them, at the same time, less prominent. Thus, the conclusion is that external stimulation cannot be used to construct better absorbers of the light energy although external stimulation is able to increase absorption as well as the refraction at frequencies higher than the resonant one.
Light absorption by impurity centres with generation of charge-transfer excitons is considered. The static electric field produced by already existing excitons shifts the excitation energy of non-excited centres and, hence, the probability of their excitation. This dependence of the absorption cross-section of a centre on the spatial distribution of excitons results in the nonlinear behaviour of the system under strong pumping. Computer simulation of exciton generation and annihilation shows that stationary powerful light transmitted through a sample has a time dependent power.
An exciton-phonon mechanism for producing cavityless optical bistability is suggested. We consider the influence of the oscillating subsystem of a crystal on the absorption process of a laser wave in the region of exciton frequencies. It is shown that exciton-phonon interaction leads to nonlinear dependence of the absorption coefficient on the density of the exciton gas. The increase of absorption with increasing exciton density, however, is possible only in the frequency region on the long-wavelength tail of the exiton band. As a result, the exciton density of the crystal becomes a hysteresis function of external parameters (intensity of the incident wave, temperature, etc.). We calculate the absorption coefficient of excitons and define the frequency and temperature regions where optical bistability may exist. We analyze different relaxation mechanisms of excitons and explain the experimental results of observing optical bistability in different semiconductor crystals.
We consider the spontaneous emission in an absorbing medium by calculating the quantum flow of energy from an emitting atom. For this purpose, we extend the analysis by Power and Thirunamachandran of quantized Maxwell fields in the vicinity of an atom in the free space to a situation where the emitter is in a dielectric medium. We represent the quantum flow in terms of the non-equal time commutators involving electric and magnetic fields, as well as the local displacement field. The commutators are calculated applying a previously developed microscopic theory of quantization of radiation in dielectrics. Consequently, we derive from first principles the rate of spontaneous emission in an absorbing medium containing local field factors and other refractive contributions. The results support the previous introduction of the (virtual cavity) local field correction by Barnett et al on a phenomenological basis, as well as our previous approach in which the spontaneous emission is considered as a resonance energy transfer to the far-zone atoms. A distinctive feature of the present formalism is that it deals with the spontaneous emission directly by calculating the quantum flow from the emitting atom. Therefore, the method is free from divergences appearing in other approaches analysing the spontaneous decay in absorbing media.
The effect of specific features of the exciton and phonon spectra of layered semiconductors on the conditions of realization of optical bistability in the exciton absorption region has been theoretically investigated by the Green’s function method. By the example of the 2 H polytype of PbI 2 , it is shown that effective exciton scattering from low-energy bending-wave vibrations leads to a blue shift of the frequency range of bistability realization and its narrowing; expansion of the temperature range of bistability observation; and a shift of the hysteresis loop to higher intensities, accompanied by a decrease in its height and width. The possibility of observing polarization optical bistability, which is related to the dependence of the exciton energy spectrum on the propagation direction of a light wave in a crystal, is also substantiated.
Abstract In this present study, the effects of electric, magnetic, and non-resonant intense laser field (ILF) on the linear, third-order nonlinear, and total optical absorption coefficients (TOACs) and relative refractive index changes (RRICs) of GaAs quantum well, having Hulthen confinement potential, were theoretically investigated. In addition, the dependence of the nonlinear optical properties in the structure on the optical intensity of incident photon and the inverse relaxation time was also calculated. To do this research, firstly the energy eigenvalues and eigenfunctions of the structure were calculated by using the effective mass and envelope function approaches. By using these calculated subband energy levels and wave functions belonging to these levels, the nonlinear optical properties of the system were obtained via the iterative method, within the compact density matrix approach framework. The obtained numerical results show that the optical properties of the considered system depend on the externally applied fields. With the applied external electric and magnetic field, the peak positions of TOACs and RRICs shift to higher energies, and the peak magnitudes increase. The high-frequency ILF applied to the structure shifts the peak positions of TOACs and RRICs initially towards higher energies and then towards lower energies and their peak sizes increase. These results show that the optical properties of the system can be adjusted purposively by changing the magnitude of applied external fields.