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Physical Review Letters

Resonant Nonlinear Dielectric Response in a Photonic Band Gap Material

Sajeev John, Tran Quang

Published Apr 1, 1996• 63 citations
Publisher

Abstract

We study the dielectric response of impurity two-level atoms in a photonic band gap (PBG) to an applied laser field. In this system, the atoms may exchange energy coherently by resonance dipole-dipole interaction (RDDI) which is assumed to be strong compared to the spontaneous emission rate. When the applied Rabi frequency exceeds the RDDI energy scale, nonlinear saturation of the absorptive part of the susceptibility occurs while the real part of the nonlinear susceptibility remains large. This suggests that doped PBG materials may act as nearly lossless, but highly nonlinear dielectrics.

DOI
10.1103/physrevlett.76.2484

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Journal of Physics B Atomic Molecular and Optical Physics•Nov 29, 2006•15 citations
We study the dielectric response of impurity two-level atoms in a photonic band gap (PBG) to an applied laser field. In this system, the atoms may exchange energy coherently by resonance dipole-dipole interaction (RDDI) which is assumed to be strong compared to the spontaneous emission rate. When the applied Rabi frequency exceeds the RDDI energy scale, nonlinear saturation of the absorptive part of the susceptibility occurs while the real part of the nonlinear susceptibility remains large. This suggests that doped PBG materials may act as nearly lossless, but highly nonlinear dielectrics.
We discuss the nonlinear response of impurity two-level atoms in a pseudophotonic band gap (PBG) to an applied laser field. It is shown that in the case when the variance of resonant dipole-dipole interaction (RDDI) is much larger than its average value and the spontaneous emission rate, a nonequilibrium second-order phase transition occurs when the applied field strength parameter exceeds the variance of RDDI. This situation arises when the atomic density is low and the resonance frequency is near the center of a wide PBG. At this threshold the system changes from glassy phase to ferroelectric phase. In the case when the average value of RDDI is larger than its variance and spontaneous emission decay rate, this phase transition becomes first order, leading to optical bistability. This situation arises when the atomic density is high or when the photon localization length within the PBG extends over many optical wavelengths. The influence of RDDI fluctuation on bistability is discussed. These results suggest that disordered, impurity-doped, PBG materials may exhibit very low threshold switching properties. \textcopyright{} 1996 The American Physical Society.
Summary form only given. Unlike semiconductors which facilitate the coherent propagation of electrons, photonic band gap (PBG) materials execute their novel functions through the coherent localization of photons. When a PBG material is doped with impurity atoms which have an electronic transition that lies within the gap, spontaneous emission of light from the atom is inhibited. Inside the gap, the photon forms a bound state to the atom. Outside the gap, radiative dynamics in the colored vacuum is highly nonMarkovian. I discuss the influence of these memory effects on laser action. When spontaneous emission is absent, the next order radiative effect (resonance dipole-dipole interaction between atoms) must be incorporated, leading to anomalous nonlinear optical effects which occur at a much lower threshold than in ordinary vacuum. I describe the collective switching of two-level atoms near a photonic band edge, by external laser field, from a passive stare to one exhibiting population inversion. This effect is forbidden in ordinary vacuum. Finally, I discuss the prospects for a phase sensitive, single (3-level) atom quantum memory device, onto which information may be written by an external laser pulse. By scattering polarized photons (flying qubit) this system may execute certain quantum logic operations.
A theory of linear susceptibility has been developed in the presence of dipole-dipole interaction for photonic-band-gap (PBG) materials doped with an ensemble of five-level nanoparticles. An external probe laser induces dipole moments in nanoparticles. When the concentration of the particles is high, the induced dipoles interact with one another through dipole-dipole interaction. Mean-field theory is used to include the effect of dipole-dipole interaction in the calculation of susceptibility. Numerical simulations are performed for the real and imaginary susceptibilities and it is found that the system switches between inversionless and noninversionless states. In addition the system switches between absorptionless and nonabsorptionless states. These occur when the resonance energy lies near the valence-band edge of the photonic-band-gap material. The theory also predicts a polarization catastrophe in PBG materials doped with nanoparticles.
We demonstrate the coherent control of spontaneous emission for a three-level atom located within a photonic band gap (PBG) material, with one resonant frequency near the edge of the PBG. Spontaneous emission from the three-level atom can be totally suppressed or strongly enhanced depending on the relative phase between the steady-state control laser coupling the two upper levels and the pump laser pulse used to create an excited state of the atom in the form of a coherent superposition of the two upper levels. Unlike the free-space case, the steady-state inversion of the atomic system is strongly dependent on the externally prescribed initial conditions. This non-zero steady-state population is achieved by virtue of the localization of light in the vicinity of the emitting atom. It is robust to decoherence effects provided that the Rabi frequency of the control laser field exceeds the rate of dephasing interactions. As a result, such a system may be relevant for a single-atom, phase-sensitive optical memory device on the atomic scale. The protected electric dipole within the PBG provides a basis for a qubit to encode information for quantum computations. A detailed literature survey on the nature, fabrication and applications of PBG materials is presented to provide context for this research.
The phenomenon of spontaneous emission cancellation has been investigated in photonic-band-gap materials in the presence of dipole-dipole interaction. The material is densely doped with an ensemble of five-level nanoparticles. The mean field theory is used to calculate the effect of the dipole-dipole interaction whereas the linear response theory is used to calculate the expressions for the real and imaginary susceptibilities. Numerical simulations are performed for an isotropic photonic-band-gap material. Interesting results are predicted such as the control of the spontaneous emission cancellation by moving the resonance energies between the energy band and energy gap. It is also found that the photonic-band-gap material can be switched between absorptive and nonabsorptive states by changing the strength of the dipole-dipole interaction and the resonance energies in the energy band.
The susceptibility has been calculated for a photonic crystal in the presence of spontaneous cancellation and dipole–dipole interaction. The crystal is densely doped with an ensemble of four-level nano-particles in Y-type configuration. Probe and a pump laser fields are applied to manipulate the absorption coefficient of the system. The expression of the susceptibility has been calculated in the linear response regime of the probe field but nonlinear terms are included for the pump field. It is found that in the presence of spontaneous emission cancellation there is an increase in the height of the two absorption peaks however the phenomenon of electromagnetically induced transparency (EIT) is not affected. On the other hand, there is a change in the height and location of the two peaks in the presence of dipole–dipole interactions. For certain values the particle density of the system can be switched from the EIT state to the non-EIT state. It is also found that when the resonance energies for two spontaneous emission channels lie close to the band edge, the EIT phenomenon disappears.