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Journal of Applied Physics

Application of Quantized Trapped Flux in a Superconducting Memory

David J. Dumin, James F. Gibbons

Published May 1, 1963• 1 citation
Publisher
DOI
10.1063/1.1729684

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Abstract Storage of a single magnetic flux quantum in a superconducting loop containing a Josephson junction represents a promising unit cell configuration for construction of a cryogenic memory of superconducting digital circuits. However, application of a DC bias current is required for operation of such a memory cell to maintain trapping of the flux quantum in the storage loop. In this work, we present a superconducting memory cell that uses a superconducting-magnetic π junction. The cell characteristics show flux quantum hysteresis centering at the zero-bias current. We develop a fabrication process that combines superconductor–ferromagnet–superconductor (SFS) junctions with superconductor–normal metal–superconductor (SNS) junctions. The critical current density of the SFS junctions shows a 0–π oscillation as a function of the ferromagnetic layer thickness. The formation of the π junction is confirmed further by the flux modulation curves of a superconducting quantum interference device made from SNS junctions with an additional SFS junction.

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Sensitivity of Ultracold Atoms to Quantized Flux in a Superconducting Ring

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We report on the magnetic trapping of an ultracold ensemble of (87)Rb atoms close to a superconducting ring prepared in different states of quantized magnetic flux. The niobium ring of 10 μm radius is prepared in a flux state n Φ(0), where Φ(0)=h/2e is the flux quantum and n varying between ±6. An atomic cloud of 250 nK temperature is positioned with a harmonic magnetic trapping potential at ∼18 μm distance below the ring. The inhomogeneous magnetic field of the supercurrent in the ring contributes to the magnetic trapping potential of the cloud. The induced deformation of the magnetic trap impacts the shape of the cloud, the number of trapped atoms, as well as the center-of-mass oscillation frequency of Bose-Einstein condensates. When the field applied during cooldown of the chip is varied, the change of these properties shows discrete steps that quantitatively match flux quantization.

arXiv:1502.01858•Physical Review Letters•Mar 17, 2015•29 citations
Abstract Storage of a single magnetic flux quantum in a superconducting loop containing a Josephson junction represents a promising unit cell configuration for construction of a cryogenic memory of superconducting digital circuits. However, application of a DC bias current is required for operation of such a memory cell to maintain trapping of the flux quantum in the storage loop. In this work, we present a superconducting memory cell that uses a superconducting-magnetic π junction. The cell characteristics show flux quantum hysteresis centering at the zero-bias current. We develop a fabrication process that combines superconductor–ferromagnet–superconductor (SFS) junctions with superconductor–normal metal–superconductor (SNS) junctions. The critical current density of the SFS junctions shows a 0–π oscillation as a function of the ferromagnetic layer thickness. The formation of the π junction is confirmed further by the flux modulation curves of a superconducting quantum interference device made from SNS junctions with an additional SFS junction.
We report on the magnetic trapping of an ultracold ensemble of (87)Rb atoms close to a superconducting ring prepared in different states of quantized magnetic flux. The niobium ring of 10 μm radius is prepared in a flux state n Φ(0), where Φ(0)=h/2e is the flux quantum and n varying between ±6. An atomic cloud of 250 nK temperature is positioned with a harmonic magnetic trapping potential at ∼18 μm distance below the ring. The inhomogeneous magnetic field of the supercurrent in the ring contributes to the magnetic trapping potential of the cloud. The induced deformation of the magnetic trap impacts the shape of the cloud, the number of trapped atoms, as well as the center-of-mass oscillation frequency of Bose-Einstein condensates. When the field applied during cooldown of the chip is varied, the change of these properties shows discrete steps that quantitatively match flux quantization.