Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

European Conference on Optical Communication

One-bit all-optical memory

Filippo Ponzini

Published Jan 1, 2005• 5 citations
Publisher

Abstract

Erbium-doped fiber properties are exploited to store energy. An all-optical memory cell with 2.5 ms refresh time, 752 μJ writing energy, 316 pJ erasing energy, and contrast ratio up to 21 dB is experimentally demonstrated. (2 pages)
DOI
10.1049/cp:20050689

Related papers

An optical memory cell based on erbium-doped fiber

Filippo Ponzini, Nicola Andriolli, P. Castoldi +3 more

The optical packet switching (OPS) paradigm, where optical packets flow in the network within the optical layer, has the potential to solve the mismatch between the ever increasing link transmission capacity and the node switching capacity, limited by electronics constraints. Anyway, to make this solution feasible and cost-effective, some technological issues must be faced. In particular OPS network nodes, in analogy with current electronic packet network nodes, require some buffering capability to store the optical packets. Since optical random access memories (RAM) are not available, current solutions exploit fiber delay lines (FDL), whose drawbacks are the fixed and finite memorization time and the sequential access. In this paper we propose a novel approach for optical memories, which exploits erbium-doped fiber fluorescence. In particular, an erbium-doped fiber span serves as a one-bit all-optical memory cell associating the bit 1 to the fiber transparency state induced by a strong writing signal, and the bit 0 to the fiber absorption state without excitation. The memory state can be probed injecting a low power reading signal in the fiber span: if it reaches the output port the stored bit is 1, if it is completely absorbed the stored bit is 0. The advantages of this architecture are a long memorization time (up to millisecond range) and the possibility to read the cell at any time (rather than at fixed instants, as happens with FDL). If the memory needs to be reset, a proper erasing signal is sent to speed up the memory cleaning. Experimental results have shown the feasibility of the proposed approach: a one-bit optical memory cell with 2.5 ms refresh time, 752 /spl mu/J writing energy, 316 /spl mu/J erasing energy, and contrast ratio up to 21 dB is experimentally demonstrated.

IEEE/LEOS Workshop on Fibres and Optical Passive Components (WFOPC)•Jul 13, 2005•4 citations

Erbium–Ytterbium-Doped Fiber-Based Optical Flip-Flop

Antonio Malacarne, Antonella Bogoni, Luca Potì

Erbium-ytterbium-doped fiber absorption and fluorescence are exploited to realize an optical bistable device. An all-optical flip-flop with 10-ns transition time, 18.48-nJ set, and 19.82-nJ reset energies, is experimentally demonstrated. The possibility to reach an extinction ratio of more than 8 dB is demonstrated as well

IEEE Photonics Technology Letters•Jun 1, 2007•17 citations

Erbium-Based Photonic Flip-Flop Memories: Model and Experimental Validation

Luca Potì

Operating principle for a flip-flop memory cell based on erbium-doped devices is presented. A complete model for memory dynamics is introduced taking into account, at the same time, for memory writing, reading, and erasing. Simple equations are found relating writing, spontaneous and stimulated erasing times to device physical parameters, signals wavelength and power. In principle, for example, increasing writing and erasing energies at the appropriate wavelength it is possible to dramatically reduce transition times. Extinction ratio (ER) is also determined as a function of host medium, and signals properties. An optimization technique is proposed for erasing signal design in order to guarantee maximum ER. Numerical example are provided for Er and Er-Yb doped fibers whose doping ion density is rho = 1.1413middot1024ions/m3, and 2.0 middot1025ions/m3, respectively. Finally, an experimental demonstration giving an Er higher than 5 and 16 dB for the two fibers, respectively, is provided and discussed.

IEEE Journal of Quantum Electronics•Mar 12, 2008•6 citations

Optimizing erbium doped materials for optical processing, memory, and laser frequency stabilization applications at 1.5 /spl mu/m

Böttger, Thiel, Sun Sun

•Jan 1, 2004•0 citations

All-Optical Flip-Flop

Antonio Malacarne, Antonella Bogoni, Luca Potì

Erbium-ytterbium doped fibre absorption and fluorescence are exploited to realize an optical bistable device. An all-optical flip-flop with 10 ns transition time, 18.48 nJ set and 19.82 nJ reset energies, is experimentally demonstrated.

International Conference on Optical Internet•Jul 1, 2006•1 citation

Investigations of an Erbium doped optical fiber for quantum state storage

Rahmani Sara

•Jan 1, 2006•0 citations
The optical packet switching (OPS) paradigm, where optical packets flow in the network within the optical layer, has the potential to solve the mismatch between the ever increasing link transmission capacity and the node switching capacity, limited by electronics constraints. Anyway, to make this solution feasible and cost-effective, some technological issues must be faced. In particular OPS network nodes, in analogy with current electronic packet network nodes, require some buffering capability to store the optical packets. Since optical random access memories (RAM) are not available, current solutions exploit fiber delay lines (FDL), whose drawbacks are the fixed and finite memorization time and the sequential access. In this paper we propose a novel approach for optical memories, which exploits erbium-doped fiber fluorescence. In particular, an erbium-doped fiber span serves as a one-bit all-optical memory cell associating the bit 1 to the fiber transparency state induced by a strong writing signal, and the bit 0 to the fiber absorption state without excitation. The memory state can be probed injecting a low power reading signal in the fiber span: if it reaches the output port the stored bit is 1, if it is completely absorbed the stored bit is 0. The advantages of this architecture are a long memorization time (up to millisecond range) and the possibility to read the cell at any time (rather than at fixed instants, as happens with FDL). If the memory needs to be reset, a proper erasing signal is sent to speed up the memory cleaning. Experimental results have shown the feasibility of the proposed approach: a one-bit optical memory cell with 2.5 ms refresh time, 752 /spl mu/J writing energy, 316 /spl mu/J erasing energy, and contrast ratio up to 21 dB is experimentally demonstrated.
Operating principle for a flip-flop memory cell based on erbium-doped devices is presented. A complete model for memory dynamics is introduced taking into account, at the same time, for memory writing, reading, and erasing. Simple equations are found relating writing, spontaneous and stimulated erasing times to device physical parameters, signals wavelength and power. In principle, for example, increasing writing and erasing energies at the appropriate wavelength it is possible to dramatically reduce transition times. Extinction ratio (ER) is also determined as a function of host medium, and signals properties. An optimization technique is proposed for erasing signal design in order to guarantee maximum ER. Numerical example are provided for Er and Er-Yb doped fibers whose doping ion density is rho = 1.1413middot1024ions/m3, and 2.0 middot1025ions/m3, respectively. Finally, an experimental demonstration giving an Er higher than 5 and 16 dB for the two fibers, respectively, is provided and discussed.