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Physica C Superconductivity

Doping dependence of optical conductivity and photoemission spectra in high Tc copper oxides

Takami Tohyama, Sadamichi Maekawa

Published Dec 1, 1991• 9 citations
Publisher
DOI
10.1016/0921-4534(91)90914-k

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We consider a single copper oxide plane with infinite Hubbard U on the copper sites and direct oxygen-oxygen and copper-oxygen overlaps as a model for high-${\mathit{T}}_{\mathit{c}}$ materials. Using a slave-boson representation, we find a region of parameter space with a charge-transfer-type metal-insulator transition at zero doping, i.e, half-filling in a mean-field limit. Performing a 1/N expansion we calculate the photoemission and inverse-photoemission spectra near the transition for both the n-type and p-type high-${\mathit{T}}_{\mathit{c}}$ materials using the sudden approximation.

Physical review. B, Condensed matter•Apr 1, 1990•47 citations
We consider a single copper oxide plane with infinite Hubbard U on the copper sites and direct oxygen-oxygen and copper-oxygen overlaps as a model for high-Tc{\mathit{T}}_{\mathit{c}}Tc​ materials. Using a slave-boson representation, we find a region of parameter space with a charge-transfer-type metal-insulator transition at zero doping, i.e, half-filling in a mean-field limit. Performing a 1/N expansion we calculate the photoemission and inverse-photoemission spectra near the transition for both the n-type and p-type high-Tc{\mathit{T}}_{\mathit{c}}Tc​ materials using the sudden approximation.