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Journal of Physics Conference Series

High-Fidelity, Weak-Light Polarization Gate Using Room-Temperature Atomic Vapor

L. Deng, E. W. Hagley, Runbing Li, Chengjie Zhu

Published Mar 18, 2015• 0 citations
Publisher

Abstract

Using a polarization-selective-Kerr-phase-shift technique we demonstrate a fast, all-optical, high-fidelity polarization gate in a room-temperature atomic medium. By writing a π- phase shift to one selected circularly-polarized component of a linearly-polarized input signal field and by equalizing the gain of both circularly-polarized components we can maintain the original strength of the signal field and yet achieve a perfect 90° rotation of its linear polarization, demonstrating a fast, high-fidelity, dynamically-controlled polarization gate operation. The orthogonal linear polarization switching field intensity can be as low as 2 mW/cm 2 using a warm rubidium vapor, which is equivalent to a 100-nanosecond pulse containing about 200 photons and confined in a typical commercial photonic hollow-core fiber with a 5-μm mode diameter.

DOI
10.1088/1742-6596/594/1/012046

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We demonstrate a fast, all-optical polarization gate in a room-temperature atomic medium. Using a Polarization-Selective-Kerr-Phase-Shift (PSKPS) technique, we selectively write a π phase shift to one circularly-polarized component of a linearly-polarized input signal field. The output signal field maintains its original strength but acquires a 90° linear polarization rotation, demonstrating fast, high-fidelity, dynamically-controlled polarization gate operation. The intensity of the polarization-switching field used in this PKSPK-based polarization gate operation is only 2 mW/cm2, which would be equivalent to 0.5 nW of light power (λ = 800 nm) confined in a typical commercial photonic hollow-core fiber. This development opens a realm of possibilities for potential future extremely low light level telecommunication and information processing systems.
An all-optical atomic Controlled-NOT (CNOT)/polarization gate operation is demonstrated with low light intensities in a room-temperature atomic medium. Using a Polarization-Selective-Kerr-Phase-Shift (PSKPS) technique, a πππ phase shift is written to only one of the two circularly-polarized components of a linearly-polarized input signal field by a weak phase-control field with "magic" detuning. At the exit of the medium, the signal field maintains its original strength but acquires a 90o^{\rm o}o linear polarization rotation, demonstrating the first fast, high-fidelity CNOT/polarization gate operation in a room-temperature atomic medium. This development opens the realm of possibilities for potential future extremely low light level telecommunication and information processing systems.
We examine an all-optical atomic-polarization-gate scheme using a polarization-selective Kerr phase-shift technique. Using a Kerr $\ensuremath{\pi}$-phase-shift technique, we selectively write a $\ensuremath{\pi}$ phase shift to one of the circularly polarized components of a linearly polarized signal field while leaving the other component unchanged. Upon recombination, the signal field acquires a ${90}^{\ensuremath{\circ}}$ linear-polarization rotation, completing the critical polarization-gate operation. We demonstrate with numerical simulations that a special phase-control light-field detuning can be obtained which results in a complete linear-polarization rotation with a phase-control light.
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We demonstrate all-optical multilogic gate operations and transistor functionalities using a Kerr phase gate method in a room-temperature 85Rb^{85}\mathrm{Rb}85Rb vapor. Two symmetric Mach-Zehnder interferometers are constructed in the same vapor cell in which a Raman gain medium is established. We show three basic logic gates (and, or, and not) by controlling the output combinations from the two interferometers. With one weakly driven interferometer acting as the phase control light for a strongly driven interferometer, we further demonstrate optical field-effect transistor functionalities. More complex combinations of this Kerr phase gate method and scheme allow all eight basic logic gate operations including the controlled-not gate to be constructed and implemented.