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Physical Chemistry Chemical Physics

Side-hole to anti-hole conversion in time-resolved transient spectral hole-burning of emerald: ground state level versus excited state population storage in low magnetic fields

Brendan F. Hayward, Hans Riesen

Published Jan 1, 2005• 5 citations
Publisher

Abstract

Time-resolved transient spectral hole-burning experiments in zero field and in low magnetic fields B( parallelc) are reported for the chromium(III) R(1)-line, 2A((2)E)<-- 2A((4)A(2)) of Chatham lab created emerald, Be(3)Al(2)Si(6)O(18)ratio Cr(III)(0.0017% per weight), in the temperature range of 3 to 12 K. In low magnetic fields and temperatures >5 K conversion of side-holes to anti-holes is observed with progressing time. Anti-holes are due to the population stored in ground state levels. The dynamics of the hole pattern can be well modelled by a set of coupled differential equations for the levels of the (4)A(2) and (2)E multiplets. The measurements allow the simultaneous determination of g-factors and spin-lattice relaxation rates in the excited state and the ground state. At 6 K the relaxation times between the split +/-1/2 2A((2)E) excited state levels and +/-3/2 2A((4)A(2)) levels of the ground state are about 0.16 ms and 9 ms, respectively. From the temperature dependence it follows that the spin-lattice relaxation rates are dominated by Orbach processes in the experimental temperature range.

DOI
10.1039/b502079d

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Wavelength-selective excited-state lifetime measurements and absorption, luminescence, and hole-burning spectra of a natural African emerald crystal are reported. The (2)E excited-state lifetime displays an extreme wavelength dependence, varying from 190 to 37 μs within 1.8 nm of the R(1)-line. Overall, the excited state is strongly quenched, in comparison to laboratory-created emerald (τ=1.3 ms), with an average quenching rate of ∼6 × 10(3) s(-1) at 2.5 K. This quenching is attributed to photoinduced electron transfer caused by a relatively high concentration of Fe(2+) ions. The forward electron-transfer rate, k(f), from the nearest possible Fe(2+) sites at around 5 Å is estimated to be ∼20 × 10(3) s(-1) at 2.5 K. The photoreductive quenching of the excited Cr(3+) ions by Fe(2+) is followed by rapid electron back-transfer in the ground state upon deactivation. The exchange interaction based quenching can be modeled by assuming a random quencher distribution within the possible Fe(2+) sites with the forward electron-transfer rate, k(f), given as a function of acceptor-donor separation R by exp[(R(f)-R)/a(f)]; R(f) and a(f) values of 13.5 and 2.7 Å are obtained at 2.5 K. The electron transfer/back-transfer reorganizes the local crystal lattice, occasionally leading to a minor variation of the short-range structure around the Cr(3+) ions. This provides a mechanism for spectral hole-burning for which a moderately high quantum efficiency of about ∼0.005% is observed. Spectral holes are subject to spontaneous hole-filling and spectral diffusion, and both effects can be quantified within the standard two-level systems for non-photochemical hole-burning. Importantly, the absorbance increases on both sides of broad spectral holes, and isosbestic points are observed, in accord with the expected distribution of the "photoproduct" in a non-photochemical hole-burning process.

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Side-hole to anti-hole conversion in time-resolved spectral hole burning of ruby: Long-lived spectral holes due to ground state level population storage

Hans Riesen, Brendan F. Hayward, Alex Szabo

Journal of Luminescence•Apr 9, 2007•11 citations
Time-resolved transient spectral hole-burning experiments in zero field and in low magnetic fields B( parallelc) are reported for the chromium(III) R(1)-line, 2A((2)E)<-- 2A((4)A(2)) of Chatham lab created emerald, Be(3)Al(2)Si(6)O(18)ratio Cr(III)(0.0017% per weight), in the temperature range of 3 to 12 K. In low magnetic fields and temperatures >5 K conversion of side-holes to anti-holes is observed with progressing time. Anti-holes are due to the population stored in ground state levels. The dynamics of the hole pattern can be well modelled by a set of coupled differential equations for the levels of the (4)A(2) and (2)E multiplets. The measurements allow the simultaneous determination of g-factors and spin-lattice relaxation rates in the excited state and the ground state. At 6 K the relaxation times between the split +/-1/2 2A((2)E) excited state levels and +/-3/2 2A((4)A(2)) levels of the ground state are about 0.16 ms and 9 ms, respectively. From the temperature dependence it follows that the spin-lattice relaxation rates are dominated by Orbach processes in the experimental temperature range.
Slow light based on transient spectral hole-burning is reported for emerald, Be(3)Al(2)Si(6)O(18):Cr(3+). Experiments were conducted in π polarization on the R(1)(± 3/2) line (E2 ← A(2)4) at 2.2 K in zero field and low magnetic fields B||c. The hole width was strongly dependent on B||c, and this allowed us to smoothly tune the pulse delay from 40 to 154 ns between zero field and B||c = 15.2 mT. The latter corresponds to a group velocity of 16 km/s. Slow light in conjunction with a linear filter theory can be used as a powerful and accurate technique in time-resolved spectroscopy, e.g., to determine spectral hole-widths as a function of time.
Wavelength-selective excited-state lifetime measurements and absorption, luminescence, and hole-burning spectra of a natural African emerald crystal are reported. The (2)E excited-state lifetime displays an extreme wavelength dependence, varying from 190 to 37 μs within 1.8 nm of the R(1)-line. Overall, the excited state is strongly quenched, in comparison to laboratory-created emerald (τ=1.3 ms), with an average quenching rate of ∼6 × 10(3) s(-1) at 2.5 K. This quenching is attributed to photoinduced electron transfer caused by a relatively high concentration of Fe(2+) ions. The forward electron-transfer rate, k(f), from the nearest possible Fe(2+) sites at around 5 Å is estimated to be ∼20 × 10(3) s(-1) at 2.5 K. The photoreductive quenching of the excited Cr(3+) ions by Fe(2+) is followed by rapid electron back-transfer in the ground state upon deactivation. The exchange interaction based quenching can be modeled by assuming a random quencher distribution within the possible Fe(2+) sites with the forward electron-transfer rate, k(f), given as a function of acceptor-donor separation R by exp[(R(f)-R)/a(f)]; R(f) and a(f) values of 13.5 and 2.7 Å are obtained at 2.5 K. The electron transfer/back-transfer reorganizes the local crystal lattice, occasionally leading to a minor variation of the short-range structure around the Cr(3+) ions. This provides a mechanism for spectral hole-burning for which a moderately high quantum efficiency of about ∼0.005% is observed. Spectral holes are subject to spontaneous hole-filling and spectral diffusion, and both effects can be quantified within the standard two-level systems for non-photochemical hole-burning. Importantly, the absorbance increases on both sides of broad spectral holes, and isosbestic points are observed, in accord with the expected distribution of the "photoproduct" in a non-photochemical hole-burning process.
We report transient spectral hole-burning experiments conducted in the R1(±1/2) line of 53-chromium(III) doped Al2O3 in zero field and low magnetic fields B∥c at 3 K. These facile experiments enable, in principle, the simultaneous determination of the hyperfine coupling parameters for both the 4A2 ground state and the Ē(E2) excited state, and in both directions to the crystal caxis. In order to determine these parameters we have applied a global fit by simulated spectra to the experimental data and good agreement between calculated and measured hole-burning patterns is achieved. The relevant resulting parameters for the Ē(E2) excited state are A∥=18±4 MHz and A⊥=40±4 MHz.
The temperature dependence of transient and persistent spectral holes is reported for the R-lines ( 2 E ← 4 A 2 transitions) in 4% chromium(III) doped NaMgAl(oxalate) 3 ·9H 2 O. The temperature dependence is well described by taking into account two pseudolocal vibrations in a weak electron−phonon coupling model and the direct process between the two 2 E levels. The persistent spectral hole-burning is based on a non photochemical mechanism involving mainly a rearrangement of a water molecule of crystallization. The 1.12 GHz width of the transient hole in the R 2 line provides a value for the relaxation rate within the 2 E multiplet, k (R 2 → R 1 ) = 3.5 × 10 9 s -1 at 2.5 K. The observed optical line width of Γ = 46 MHz for the R 1 -line at 2.5 K is most likely dominated by chromium(III)−chromium(III) spin−spin interactions. Spectral diffusion on the ms time scale causes persistent spectral holes to be significantly broader and holewidths of 260 MHz and 1.63 GHz for the R 1 and R 2 -line, respectively, are observed. Spontaneous hole-filling is thermally activated and spectral diffusion on the minute time scale is slow in the investigated temperature range of 2.5−30 K.
We report on the observation of slow light induced by transient spectral hole-burning in a solid, that is based on excited-state population storage. Experiments were conducted in the R1-line (2E←4A2 transition) of a 2.3 mm thick pink ruby (Al2O3:Cr(III) 130 ppm). Importantly, the pulse delay can be controlled by the application of a low external magnetic field B||c≤9 mT and delays of up to 11 ns with minimal pulse distortion are observed for ~55 ns Gaussian pulses. The delay corresponds to a group velocity value of ~c/1400. The experiment is very well modelled by linear spectral filter theory and the results indicate the possibility of using transient hole-burning based slow light experiments as a spectroscopic technique.