Optical conductivity in a simple model of the pseudogap state

Ph. Nozières, F. Pistolesi

Giang H. Bach, Jorge G. Hirsch, F. Marsiglio

M. V. Sadovskii, N. A. Strigina

A 2D model of the pseudogap state is considered on the basis of the scenario of strong electron scattering by short-range-order fluctuations of the “dielectric” (antiferromagnetic or charge density wave) type. A system of recurrence relations is constructed for a one-particle Green’s function and the vertex part, describing the interaction of electrons with an external field. This system takes into account all Feynman diagrams for electron scattering at short-range-order fluctuations. The results of detailed calculations of optical conductivity are given for various geometries (topologies) of the Fermi surface, demonstrating both the effects of pseudogap formation in the electron spectrum and the localization effects. The obtained results are in qualitative agreement with experimental data for underdoped HTSC cuprates.

Nikolay M. Plakida

N. A. Kuleeva, É. Z. Kuchinskiǐ

The influence of disorder and pseudogap fluctuations on the Mott insulator-metal transition in strongly correlated systems has been studied in the framework of the generalized dynamic mean field theory (DMFT + Σ approach). Using the results of investigations of the density of states (DOS) and optical conductivity, a phase diagram (disorder-Hubbard interaction-temperature) is constructed for the paramagnetic Anderson-Hubbard model, which allows both the effects of strong electron correlations and the influence of strong disorder to be considered. Strong correlations are described using the DMFT, while a strong disorder is described using a generalized self-consistent theory of localization. The DOS and optical conductivity of the paramagnetic Hubbard model have been studied in a pseudogap state caused by antiferromagnetic spin (or charge) short-range order fluctuations with a finite correlation length, which have been modeled by a static Gaussian random field. The effect of a pseudogap on the Mott insulator-metal transition has been studied. It is established that, in both cases, the static Gaussian random field (related to the disorder or pseudogap fluctuations) leads to suppression of the Mott transition, broadening of the coexistence region of the insulator and metal phases, and an increase in the critical temperature at which the coexistence region disappears.

W. Brenig