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Applied Physics Letters

Experimental demonstration of all-optical 1×2 quantum routing

Byoung Seung HAM

Published Aug 4, 2004• 29 citations
Publisher

Abstract

Using a quantum switching technique based on a two-photon coherence swapping, we experimentally demonstrate an all-optical 1×2 quantum routing, where the observed switching time of ∼5μs is two orders of magnitude faster than the carrier lifetime or the population relaxation time. Owing to the nonabsorption resonance and its enhanced nonlinearity, the observed switching efficiency (intensity ratio of switch-out signal to switch-in signal) is as high as 10%. Such an efficient and fast optical routing method has the potential to hyperterahertz all-optical quantum routers, where semiconductor quantum wells or quantum dots are chosen as the optical medium with a spin dephasing time in the range of picoseconds.

DOI
10.1063/1.1779968

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Using a quantum switching technique based on a two-photon coherence swapping, we experimentally demonstrate an all-optical 1×2 quantum routing, where the observed switching time of ∼5μs is two orders of magnitude faster than the carrier lifetime or the population relaxation time. Owing to the nonabsorption resonance and its enhanced nonlinearity, the observed switching efficiency (intensity ratio of switch-out signal to switch-in signal) is as high as 10%. Such an efficient and fast optical routing method has the potential to hyperterahertz all-optical quantum routers, where semiconductor quantum wells or quantum dots are chosen as the optical medium with a spin dephasing time in the range of picoseconds.
Summary form only given. Analysis of the physics of current optical switching techniques shows that the possible switching speed is less than THz even if one may use intersubband transitions of semiconductor quantum wells. The author demonstrates that the switching speed can be faster than the population relaxation time T/sub 1/ when quantum coherence is utilized. The observation of optical switching time is ten times faster than the population decay time. A spectral hole-burning crystal of Pr/sup 3+/ doped Y/sub 2/SiO/sub 5/ (Pr:YSO) is used for an initial experimental demonstration.
Electron-spin relaxation has been investigated in a variety of quantum confined structures including GaAs-based quantum wells and quantum wires as well as InP-based quantum wells, and it has been shown to exhibit ultrafast relaxation in the picosecond, and even in the femtosecond, range. This ultrafast relaxation has been used together with the exciton absorption nonlinearity as an novel principle of all-optical switching device which can avoid the speed limit due to the slow carrier lifetime in conventional switching devices. Experiments on GaAs-based quantum-well spin switches have shown 4-ps gate switch operation. Also, experimental analyses have shown the feasibility of these devices at a high contrast ratio (13 dB) and high repetition rate (40 GHz). The application of this device to a demultiplexer has been proposed.