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Physical review. B, Condensed matter

Magnetic susceptibility of the doped Mott insulator: Gauge theory

L. B. Ioffe, Vadim Kalmeyer

Published Jul 1, 1991• 33 citations
Publisher

Abstract

We discuss the orbital part of the magnetic susceptibility ${\mathrm{\ensuremath{\chi}}}_{\mathit{d}}$ of the doped Mott insulator in two dimensions. Starting from the U(1) gauge theory, we obtain corrections to ${\mathrm{\ensuremath{\chi}}}_{\mathit{d}}$ due to gauge-field fluctuations. We find that these fluctuations reduce the Bose contribution to the susceptibility, implying that the Bose-condensation temperature is strongly suppressed by gauge interactions. The temperature dependence of ${\mathrm{\ensuremath{\chi}}}_{\mathit{d}}$ is obtained by a numerical simulation of a lattice Bose gas interacting with a random magnetic field, and found to be consistent with recent data on high-${\mathit{T}}_{\mathit{c}}$ oxides.

DOI
10.1103/physrevb.44.750

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A slave-fermion gauge-theory approach of the t-J model: Doping-induced complex magnetic structure and Z2_{2}2​ spin-gapped anomalous metal in an antiferromagnetic doped Mott insulator
We reinvestigate a doped antiferromagnetic Mott insulator based on the slave-fermion approach of the t-J model, where antiferromagnetic spin fluctuations and doped holes are described by bosonic spinons and fermionic holons, respectively. Earlier studies have shown that an effective field theory for the doped antiferromagnetic Mott insulator is given by a non-relativistic fermion (holon) U(1) gauge theory for charge dynamics and a relativistic boson (spinon) U(1) gauge theory for spin dynamics, thus allowing an anomalous metallic phase where bosonic spinons are gapped away from an antiferromagnetic state, analogous to the U(1) spin liquid phase in the slave-boson approach of the t-J model. We argue that the emergent U(1) gauge structure in this approach is based on a simplified picture for antiferromagnetic correlations. Considering that dynamics of doped holes frustrates a collinear antiferromagnetic spin configuration, we show that doped holes enhance ferromagnetic spin correlations and result in a complex magnetic structure. The presence of such a complex spin texture reduces the U(1) gauge structure down to Z2_{2}2​, thus a different effective field theory results for the spin-gapped non-Fermi liquid metal at low temperatures because there are no gapless U(1) gauge fluctuations.
Employing Nernst-Einstein decomposition $\ensuremath{\sigma}={e}^{2}{\ensuremath{\chi}}_{c}D$ of the conductivity $\ensuremath{\sigma}$ onto charge susceptibility (compressibility) ${\ensuremath{\chi}}_{c}$ and diffusion constant DDD, we argue that the bad-metallic behavior of $\ensuremath{\sigma}$ in the regime of high temperatures and lightly doped insulator is dominated by the strong temperature and doping dependence of ${\ensuremath{\chi}}_{c}$. In particular, we show how at small dopings ${\ensuremath{\chi}}_{c}$ strongly decreases towards undoped-insulating values with increasing temperature and discuss a simple picture leading to the linear-in-temperature resistivity with the prefactor increasing inversely with decreasing concentration (p)(p)(p) of doped holes, $\ensuremath{\rho}\ensuremath{\propto}T/p$. On the other hand, DDD shows weak temperature and doping dependence in the corresponding regime. We support our arguments by numerical results on the two-dimensional Hubbard model and discuss the proposed picture from the experimental point of view.
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