The time lag of the crossed-polarized part of the transmitted probe pulse, which is due to photorefractive energy transfer from the pump pulse, is measured with respect to the original transmitted probe pulse. The average photorefractive response time of the crystal is estimated through theoretical analysis.
For understanding and optimization of the photo refractive gain it is important to know the basic parameters of photo-ionization and recombination processes. In the nanosecond regime the pulse energies required for maximum coupling gain in semiconductors easily reach the limit for saturation of the deep centers. especially if one of the recombination times is larger than the pulse duration. In that case, induced absorption (or bleaching) will appear due to a redistribution of the population of the different levels of the deep center and counterbalance photorefractive amplification. The present simultaneous study of the kinetics of the induced absorption and the photocurrent in an InP:Fe sample reveals a number of interesting parameters like electron and hole recombination times, ionization cross sections and Fe2+/Fe3+ concentrations.
Induced absorption was observed in an InP:Fe crystal under nanosecond pulse illumination at 1.06- mu m wavelength. The maximum induced absorption was 0.05 cm/sup -1/ when probed at a 1.06- mu m wavelength and 0.30 cm/sup -1/ when probed at a 1.30- mu m wavelength. The kinetics are studied together with the photocurrent giving the recombination times of holes (100 ns) at room temperature and an estimate for that of electrons (0.5 ns). The induced absorption is attributed to a population redistribution of the different iron impurity states. Computer simulations are able to explain all the features found in the experiments and give values for the photoionization cross sections, in particular for the unknown cross section Fe/sup 2+*/ to Fe/sup 3+/+e/sup -/.>