We demonstrate the efficient generation of ultraslow bright and dark optical solitons in a lifetime-broadened three-level atomic medium by using only a low-intensity pulsed laser radiation. The proposed scheme may be useful, in principle, for the control technology of optical delay lines and optical buffers.
We demonstrate the formation of ultraslow dark optical solitons with a four-level scheme in an asymmetric semiconductor double quantum well (SDQW) structure based on intersubband transitions by using only a low-intensity pulsed laser radiation. With appropriate conditions we show numerically that the dark optical soliton can travel with a ultraslow group velocity V g /c ∼ – 10 −3 . Such a semiconductor system is much more practical than its atomic counterpart because of its flexible design and the controllable interference strength. This nonlinear optical process in the SDQW solid-state material may be used for the control technology of optical delay lines and optical buffers.
Abstract A theoretical scheme is proposed to investigate the formation of three coupled slow temporal vector optical solitons in a lifetime-broadened seven-state atomic medium. We demonstrate that the three polarized components of a low intensity linear-polarized pulsed probe field can evolve into three coupled slow temporal vector optical solitons due to the fact that group-velocity dispersion can be well compensated by the self- and cross-phase-modulation effects. Moreover, this atomic system could support the existence of various types of three coupled slow temporal vector solitons, such as bright–bright–bright, bright–dark–bright, dark–dark–dark, and bright–dark–dark vector solitons.