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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Optical quantum control of localized spins in semiconductors

Carlo Piermarocchi

Published May 25, 2004• 0 citations
Publisher

Abstract

We discuss schemes for the realization of quantum information devices using optical techniques and the electronic and spin degrees of freedom of diluted impurities in semiconductors. State-of-the-art nano-optical techniques can address a single impurity localized in a semiconductor. The optical properties of the host can be used to efficiently control the internal degrees of freedom of the impurities, and therefore to encode and process quantum information.

DOI
10.1117/12.547072

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We discuss schemes for the realization of quantum information devices using optical techniques and the electronic and spin degrees of freedom of diluted impurities in semiconductors. State-of-the-art nano-optical techniques can address a single impurity localized in a
semiconductor. The optical properties of the host can be used to
efficiently control the internal degrees of freedom of the impurities,
and therefore to encode and process quantum information.
Abstract We shall present a review of semiconductor spin‐based implementation schemes for the realization of quantum information/computation solid‐state devices. After briefly describing the fundamentals of quantum computation theory, we shall introduce and discuss potential implementation schemes based on the spin degrees of freedom in semiconductor nanostructures. More specifically, we shall describe an implementation scheme for quantum information processing in which the spin degrees of freedom of electrons confined to a quantum dot are the computational degrees of freedom, and spins are manipulated/controlled through interaction between trionic states created by interband optical transitions by ultrafast sequences of multicolor laser pulses. We will also review briefly an adiabatic method for operating the two‐qubit gate that avoids the main imperfections present in real quantum dots: exciton decay, hole mixing, and phonon decoherence.
A review of semiconductor-based schemes for the realization of quantum information processing devices is presented. After recalling the fundamentals of quantum information/computation theory, we shall discuss potential implementation schemes based on charge and/or spin degrees of freedom in semiconductor nanostructures. More specifically, we shall present an all-optical implementation scheme of quantum information processing with semiconductor macroatoms/molecules, where the computational degrees of freedom are interband optical transitions (excitonic states) manipulated/controlled by ultrafast sequences of multicolor laser pulses. We shall primarily focus on implementation schemes dealing with charge excitations in GaAs as well as GaN quasi-zero-dimensional structures. We shall finally discuss the possibility to combine charge and spin degrees of freedom, thus, allowing for fast-quantum gates, which do not translate into fast-decoherence times.
Spins localized in semiconductor nanostructures have been intensively investigated for quantum spintronics. These include the spin of single electron localized by quantum dots or impurities, and spins of the lattice nuclei. These localized spins can be exploited as carriers of quantum information, while in some circumstances they also play the role of deleterious noise sources for other quantum objects through their couplings. Quantum control of the spins in semiconductor nanostructures is therefore of central interest for quantum applications. In this thesis, we address several problems related to the quantum control of electron or hole spin and nuclear spins in semiconductor quantum dots and impurity centers. The first problem studied is the control of nuclear spin bath for a hole spin qubit in III-V semiconductor quantum dot. In quantum dots formed on III-V compounds, the direct band gap of the host material allows ultrafast optical addressability of a single electron or hole spin qubit. However, nonzero nuclear spins of group III and group V elements result in a large statistical fluctuation in the Zeeman splitting of the spin qubit which then dephases in nanosecond time scale. We present a novel feedback scheme to suppress the statistical fluctuation of the nuclear spin field for enhancing the coherence time of the hole spin qubit. We also find positive feedback control which can amplify the magnitude of the nuclear field, so that a bimodal distribution can develop, realizing a quantum environment that can not be described by a single temperature. The second problem addressed here is the control of donor spin qubits in silicon architecture which have ultra-long quantum coherence time. We developed the quantum control scheme to realize the quantum metrology of magnetic field gradient, based on the celebrated Kane’s architecture for quantum computation. The scheme can also be generalized to calibrate the locations of the donors. In the third part of the thesis, we investigate a novel type of quantum dot formed in a new class of two-dimensional semiconductors, monolayer transition metal dichalcogenides (TMDs), which exhibit interesting spin and pseudospin physics. This novel quantum dot system may offer new opportunity for quantum spintronics in the ultimate 2D limit, and we investigate here the valley pseudospin as a possible quantum bit carrier. A main finding is that, contrary to the intuition, the lateral confinement by the quantum dot potential does not lead to noticeable valley hybridization, and therefore the valley pseudospin in monolayer TMDs QD can well inherit the valley physics such as the valley optical selection rules from the 2D bulk which implies a variety of quantum control possibilities.
A review of semiconductor-based schemes for the realization of quantum information processing devices is presented. After recalling the fundamentals of quantum information/computation theory, we shall discuss potential implementation schemes based on charge and/or spin degrees of freedom in semiconductor nanostructures. More specifically, we shall present an all-optical implementation scheme of quantum information processing with semiconductor macroatoms/molecules, where the computational degrees of freedom are interband optical transitions (excitonic states) manipulated/controlled by ultrafast sequences of multicolor laser pulses. We shall primarily focus on implementation schemes dealing with charge excitations in GaAs as well as GaN quasi-zero-dimensional structures. We shall finally discuss the possibility to combine charge and spin degrees of freedom, thus allowing for fast quantum gates which do not translate into fast decoherence times.
Implementations of quantum information processing systems based on optically controlled electron spins in semiconductor quantum dots are particulary appealing due to several features. These features include inherent ultrafast gate operation times, reasonably long decoherence times, small optical control power and a natural ability to link to optical fiber communication networks. We will discuss the current state of the art in the experimental implementations of the main elements of semiconductor spin qubits: qubit initialization, single-qubit gates, two-qubit gates, entanglement distribution, projective measurement, quantum memory and indistinguishable single-photon generation.