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Applied Physics Letters

Amplified spontaneous emission of F+3 color centers in a LiF crystal

Lixing Zheng, Guo Shaozhang, Liangfeng Wan

Published Feb 10, 1986• 12 citations
Publisher

Abstract

This letter reports the observation of one- and two-dimensional amplified spontaneous emission of F+3 color centers in a LiF crystal and a measurement of its optical gain coefficient.
DOI
10.1063/1.96558

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Luminescence and absorption spectra of LiF crystals with F2− color centers (CCs) were studied in the 14–300 K temperature range. The Huang–Rhys factors measured from absorption and emission spectra were equal in magnitude and calculated to be 3.2 and 2.72 at 77 and 300 K, respectively. It was shown that below 40 K inhomogeneous broadening of the zero phonon line of the F2− CC prevails over homogeneous broadening. Inhomogeneous broadening of the zero phonon line was observed to vary from 5 to 15 cm−1 for different crystal preparations. Persistent spectral hole burning stable at room temperature was realized in LiF:F2− crystals.
Color centers, which are point defects in crystals, play a crucial role in altering the optical properties of their host materials, enabling widespread applications in the field of quantum information processing. While the majority of the state-of-the-art color centers are inorganic, they come with limitations such as the challenging material preparations and insufficient amount of available centers. In contrast, organic color centers have recently gained attention due to their ease of preparations and tailorable functionalities. Here, pentacene-doped p-terphenyl (Pc:Ptp), an organic color-center system normally used for microwave quantum electronics, is demonstrated for the first time its ability of self-cavity laser emission at room temperature. The laser emission is characterized by strong polarization and high anisotropy, attributed to the unique packing of the color-center molecules within the crystal. The optical coherence is found to be a figure of merit to distinguish the processes of the amplified spontaneous emission (ASE) and lasing in Pc:Ptp. This work highlights the potential of Pc:Ptp as a compact and efficient platform for light-matter interactions , offering significant promise for enhancing the performance of solid-state quantum devices based on this organic color-center system.
Amplified spontaneous emission (ASE) occurs in media with large gain, and affects both the magnitude and the spatial distribution of the inversion. In this work we theoretically study the effect of ASE in three-dimensional, rectangular slab amplifiers, using Monte Carlo type computer simulations. We found that in one-dimensional amplifiers ASE is always larger at the edges so that the inversion has a maxima at the center of the amplifier. However, in two- and three-dimensional amplifiers, the inversion has a minimum at the center of the amplifier for low gain, and a maximum at the center of the amplifier for high gain. Thus, the inversion profile can be changed by increasing the gain from a minimum at the center, through a plateau, to a maximum at the center. A simple analytical theory was developed and agrees with these results.