The phonon scattering assisted luminescence of semiconductor quantum well excitons after short pulse excitation is investigated. The presented analysis is based on the low-density limit of a set of equations for quantum correlation functions for electrons, phonons, and photons. The dynamics of the correlation functions describes the optical excitation and the decay of the coherent exciton polarization as well as the generation of an incoherent exciton occupation and its luminescence decay. Numerical solutions of the equations of motion demonstrate strong competition effects of the exciton-phonon and the exciton-photon interaction on a picosecond time scale and lead to a nonmonotonous temperature dependence of the time-resolved spontaneous emission. The angle resolved emission resembles the generation and decay dynamics of the exciton density for different in-plane momenta.
The phonon scattering assisted luminescence of semiconductor quantum well excitons after short pulse excitation is investigated. The presented analysis is based on the low-density limit of a set of equations for quantum correlation functions for electrons, phonons, and photons. The dynamics of the correlation functions describes the optical excitation and the decay of the coherent exciton polarization as well as the generation of an incoherent exciton occupation and its luminescence decay. Numerical solutions of the equations of motion demonstrate strong competition effects of the exciton-phonon and the exciton-photon interaction on a picosecond time scale and lead to a nonmonotonous temperature dependence of the time-resolved spontaneous emission. The angle resolved emission resembles the generation and decay dynamics of the exciton density for different in-plane momenta.
A fully microscopic quantum theory for the photoluminescence of a semiconductor quantum well is summarized. The dynamic equations for the interacting electron–hole pairs (excitons), phonons and photons are presented and specialized for the situations of interacting electron–hole populations and low density excitonic populations. Signatures of phonon assisted exciton formation are discussed in the low density limit, where the early dynamics is found to be strongly dependent on the emission angle. For long times the decay can be described by an angle-independent decay rate.
Summary form only given. The light emission of optically excited quantum well excitons can be divided into two parts: the nonscattered contribution (primary emission, where the momentum of the photon is conserved) and the scattered one (secondary emission). Recent theoretical work was focused on isolated mechanisms for the generation of secondary emission, such as exciton-disorder (Rayleigh signal), exciton-phonon and exciton-photon interactions. In extension of these studies, we treat a more general situation by studying the simultaneous action of several emission generating mechanisms for the ease of 1s-exciton excitation in the low density case. The theoretical approach is based on a coupled set of Heisenberg equations of motion for quantum correlation functions of excitons, photons, phonons and their assisted density matrices in a disordered system using 2nd order Born and Markovian approximation. First, we illustrate the procedure and numerical results for a coupled system of excitons, phonons and photons in an ordered quantum well.
This dissertation addresses both fundamental aspects of the coherent exciton kinetics in single semiconductor quantum wells and more application-oriented aspects of the collective excitonic optical properties in quantum well Bragg structures. We use a bosonic theory to investigate the ultrafast coherent exciton dynamics after an optical excitation in a single semiconductor quantum well. It is shown that, on intermediate time scales, nonlinear mean-field interactions between excitons lead to a coherent, wave-like evolution in the momentum distribution of optically inactive excitons, which can survive for some time before dephasing sets in. Driven by two-exciton correlations, this coherent quantum kinetic effect bridges the well-known kinetics associated with optical excitation on the one hand and incoherent relaxation on the other. We also study more general dynamical properties of bosonic mean field systems with N-species of excitons (in a single semiconductor quantum well). We find that the momentum-conserving exciton mean field equations, including the coupling to external fields and fermionic corrections, have the dynamical structure su(N,N). We show that one can define a non-real generalized "Bloch vector" and a non-hermitian "density matrix" description, which allow us to explicitly obtain all the constants of motion associated with the su(N,N) symmetry. The many-body effects and correlations of excitons in a single quantum well are mainly induced by the Coulomb interactions. In the case of a semiconductor quantum well Bragg structure, the light induced coupling between different quantum wells also dramatically affects the excitons' behavior, especially through the collective excitations of excitons in the whole structure. We investigate the linear excitonic optical properties of the quantum well Bragg structure induced by the collective excitations using the transfer matrix approach. We show that the so called "intermediate band" (IB) created by the exciton resonance, which does not exist in conventional photonic crystals, can be used for the stopping, storing and releasing of light, which is important in information processing devices. We also discuss the compensation of the dispersive distortion in the light delay process through reversing the IB band structure. Other conceptual and practical issues such as the decay rate of the IB modes and the generalized anti-reflection coating are also investigated.
This work presents new results of experimental studies of exciton relaxation in GaAs/AlGaAs multiple quantum well materials, using transient nonlinear laser spectroscopy techniques. In the low excitation regime, effective optical Bloch equations similar to the density matrix formalism of a two-level system describe the response. Solutions of these equations appropriate for three-pulse scattering studies are presented, along with a discussion of new experimental techniques used in this work. Non-ideal conditions present in the molecular beam epitaxy growth process introduce monolayer fluctuations in the quantum well thickness, leading to inhomogeneous broadening and exciton localization at sites of minimum energy. Localized excitons are separated in energy from extended, quasi-delocalized states by the mobility edge. Studies of localized exciton relaxation indicate that these excitons relax on a much slower timescale than delocalized excitons. The temperature dependence of the localized exciton relaxation rate shows that above 15K, the excitons are thermally activated to extended states above the mobility edge. Below 15K the excitons relax by phonon assisted migration between localization sites. For temperatures above 5K, and for exciton energies greater than 1 meV below line center, an extra dephasing mechanism characterizes the exciton relaxation. The inhomogeneous broadening of the exciton leads to the emission of stimulated photon echoes in the experimental geometry used in this work. The time-resolved emission demonstrates the stimulated photon echo nature at low excitation densities. At higher excitation densities, the decay dynamics is more complex. The time-resolved emission shows the presence of a stimulated photon echo and a free polarization decay. This unusual result suggests that both a homogeneous and an inhomogeneous exciton distribution comprise the exciton resonance. Exciton relaxation at low excitation densities represents the interaction of the exciton with the lattice. At higher excitation densities, exciton-exciton and exciton-free carrier interactions modify the relaxation rates. The dependence of the exciton relaxation rate on excitation density shows that many-body effects play an important role in the exciton physics. Free carrier interactions are more efficient at increasing the exciton relaxation rate; both types of interactions are more important in quantum well systems than in bulk materials.
Summary form only given. Effects of exciton-exciton correlations (e.g. bound biexciton, exciton-exciton scatterings) have been amply demonstrated in the /spl chi//sup (3)/ contributions to experiments measuring the interband polarization in semiconductor quantum wells. Increasing attention is currently being focussed on higher order excitonic correlation effects. One higher-order quantity is the incoherent exciton density (defined as total exciton density minus the interband polarization squared) which is created by excitons scattering each other out of the coherent component. Other than its role in the dephasing and relaxation of the system, the incoherent exciton density has not received much attention. In this contribution, we present results of our theoretical study on the behavior of this quantity and related correlation functions under conditions that inhibit relaxation. Our theory follows the general formulation of bosonic theories for excitons: the basic degrees of freedom are exact bosons, and the fermionic exchange effects are incorporated into the boson-boson and boson-photon effective Hamiltonians. We truncate the effective interaction at the two-boson level. No formal bosonization procedure is used: the matrix elements of our effective Hamiltonian are chosen in such a way that in the coherent /spl chi//sup (3)/ limit, our boson theory yields formally identical results as the standard fermionic dynamics controlled truncation formalism. Standard many-body techniques are used to derive equations of motion for densities, correlation functions, and measurable quantities such as the interband polarization.
Summary form only given. The coherence decay of optically excited electronic systems provides one of the most powerful tools to investigate interaction processes of excited states. In semiconductors, the optical coherence phenomena are usually investigated by nonlinear techniques such as four wave mixing (FWM), photon echo, or reflectivity experiments. Exciton-phonon, exciton-exciton, or exciton-free carriers scattering processes have been explored in recent years with these techniques. As demonstrated recently, a direct measurement of the optical dephasing time can be obtained through the temporal coherent control of electronic excitations. In these experiments, the emission following the excitation by an ultrashort optical pulse sequence, is detected in a non-specular direction (secondary emission). This provides an alternative approach to FWM techniques, which allows us to analyse the scattering processes either with phonons or due to mutual collisions. Using the coherent control technique monitored through the secondary emission (SE), we report on the coherent dynamics of excitons in bare quantum wells (QW) and compare it to that of exciton-polaritons in microcavity (MC) embedded quantum wells.