Soviet Journal of Quantum Electronics
Four-wave processes in cesium vapor involving electronic stimulated Raman scattering
A. K. Popov, V.P. Ran'shikov, V. P. Timofeev, V Sh Épshteĭn, G. V. Yurov
Abstract
Experimental and theoretical investigations were made of four-wave frequency mixing of the ?4? = ?1 ? ?2 ? ?3 type in cesium vapor enhanced by a Raman resonance (the field at the frequency ?2 is formed as a result of electronic stimulated Raman scattering of the pump field ?1). A strong dependence of the mixing characteristics on the conditions for excitation of electronic stimulated Raman scattering was identified and analyzed. Recommendations are given on the choice of optimal conditions for efficient frequency mixing in Raman resonance systems.