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Physical Review Letters

Electronic Properties of the Insulating Half-Filled Hubbard Model

Niyazi Bulut, Douglas J. Scalapino, Steven R. White

Published Aug 1, 1994• 99 citations
Publisher

Abstract

Monte Carlo results for the frequency dependent conductivity ${\ensuremath{\sigma}}_{1}(\ensuremath{\omega})$, the angular resolved photoemission spectral weight $A(\mathbf{p},\ensuremath{\omega})$, and the electron momentum distribution $〈{n}_{\mathbf{p}}〉$ are calculated for a half-filled Hubbard model with the on-site Coulomb interaction $U$ equal to the bandwidth $8t$. We find that even for $U=8t$, a spin-density-wave approximation provides a sensible description of this data and hence a useful picture of the electronic degrees of freedom in the insulating state.

DOI
10.1103/physrevlett.73.748

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Exact-diagonalization and quantum Monte Carlo methods are used to study the occurrence of a metal-insulator transition and the distribution of charges and magnetic moments in the ground state of a one- and two-dimensional half-filled system of correlated electrons, described by a one-band simplified Hubbard model extended with bond-charge--site-charge interactions. Numerical results for the electrical conductivity, the density of states, and the spin- and charge-density correlation functions strongly suggest that the bond-charge--site-charge interaction plays a fundamental role in the occurrence of a metal-insulator transition and of ferromagnetic order.
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