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Optics Communications

Purcell effect observation in erbium doped lithium niobate photonic crystal structures

Chia-Hung Hou, M.-P. Bernal, Chii‐Chang Chen, Roland Salut, C. Sada, N. Argiolas, M. Bazzan, Maria Vittoria Ciampolillo

Published May 16, 2008• 6 citations
Publisher
DOI
10.1016/j.optcom.2008.04.044

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Lithium niobate on insulator (LNOI), thanks to its electro-optic properties and second order nonlinearity, is one of the most promising photonic materials for on-chip implementation of a complex photonic integrated circuit (PIC) [1]. Integration of rare earth ion emitters (RIE), characterized by high coherent transitions in both optical and microwave domains, into LNOI is a very attractive perspective to fully exploit the potential of this material in quantum optics applications and for on chip light generation and amplification. By choosing Erbium ions these functionalities can be implemented at telecom wavelengths (~1550 nm). Erbium integration in LNOI can be achieved using the smart cut technique [2]. However, this approach implies heating the material up to ~1100 °C, approaching the Curie temperature of lithium niobate (~1200 °C). Ion implantation also permits the incorporation of RIE into the lithium niobate (LN) crystal structure, operating at lower temperature with high spatial precision of the doped region in a complex PIC.

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Rare-earth-doped materials have garnered significant attention as material platforms in emerging quantum information and integrated photonic technologies. Concurrently, advances in its nanofabrication processes have unleashed thin film lithium niobate (LN) as a leading force of research in these technologies, encompassing many outstanding properties in a single material. Leveraging the scalability of ion implantation to integrate rare-earth erbium (Er3+), which emits at 1532 nm, into LN can enable a plethora of exciting photonic and quantum technologies operating in the telecom C-band. Many of these technologies rely on coupling via polarization-sensitive photonic structures such as waveguides and optical nanocavities, necessitating fundamental material studies. Toward this goal, we have conducted an extensive study on the role of implantation and post-implantation processing in minimizing implantation-induced defectivity in x-cut thin film LN on an insulator. By leveraging this, we have demonstrated a cutting-edge ensemble optical linewidth of 140 GHz for Er emission in x-cut thin-film LN at 77 K. This finding highlights the significant progress in minimizing implantation-induced defects through careful ion implantation engineering and post-implantation processing. To the best of our knowledge, this linewidth measured at a higher temperature (77 K) is the narrowest when compared to the values reported for bulk-doped and implanted LN crystals at liquid helium temperatures (∼3 K), showcasing the potential of our approach for higher-temperature operation devices. Furthermore, we show that the Er photoluminescence (PL) is highly polarized perpendicular to the x-cut LN c-axis through systematic and combinational PL and high-resolution scanning transmission electron microscopy (HRSTEM) studies. These results indicate that using Er emitters in thin film LN, along with their polarization characteristics and related ion implantation engineering, presents an opportunity to produce highly luminescent Er-doped LN photonic integrated devices and circuits for quantum and nanophotonic applications at telecom wavelengths.

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Lithium niobate on insulator (LNOI), thanks to its electro-optic properties and second order nonlinearity, is one of the most promising photonic materials for on-chip implementation of a complex photonic integrated circuit (PIC) [1]. Integration of rare earth ion emitters (RIE), characterized by high coherent transitions in both optical and microwave domains, into LNOI is a very attractive perspective to fully exploit the potential of this material in quantum optics applications and for on chip light generation and amplification. By choosing Erbium ions these functionalities can be implemented at telecom wavelengths (~1550 nm). Erbium integration in LNOI can be achieved using the smart cut technique [2]. However, this approach implies heating the material up to ~1100 °C, approaching the Curie temperature of lithium niobate (~1200 °C). Ion implantation also permits the incorporation of RIE into the lithium niobate (LN) crystal structure, operating at lower temperature with high spatial precision of the doped region in a complex PIC.
Rare-earth-doped materials have garnered significant attention as material platforms in emerging quantum information and integrated photonic technologies. Concurrently, advances in its nanofabrication processes have unleashed thin film lithium niobate (LN) as a leading force of research in these technologies, encompassing many outstanding properties in a single material. Leveraging the scalability of ion implantation to integrate rare-earth erbium (Er3+), which emits at 1532 nm, into LN can enable a plethora of exciting photonic and quantum technologies operating in the telecom C-band. Many of these technologies rely on coupling via polarization-sensitive photonic structures such as waveguides and optical nanocavities, necessitating fundamental material studies. Toward this goal, we have conducted an extensive study on the role of implantation and post-implantation processing in minimizing implantation-induced defectivity in x-cut thin film LN on an insulator. By leveraging this, we have demonstrated a cutting-edge ensemble optical linewidth of 140 GHz for Er emission in x-cut thin-film LN at 77 K. This finding highlights the significant progress in minimizing implantation-induced defects through careful ion implantation engineering and post-implantation processing. To the best of our knowledge, this linewidth measured at a higher temperature (77 K) is the narrowest when compared to the values reported for bulk-doped and implanted LN crystals at liquid helium temperatures (∼3 K), showcasing the potential of our approach for higher-temperature operation devices. Furthermore, we show that the Er photoluminescence (PL) is highly polarized perpendicular to the x-cut LN c-axis through systematic and combinational PL and high-resolution scanning transmission electron microscopy (HRSTEM) studies. These results indicate that using Er emitters in thin film LN, along with their polarization characteristics and related ion implantation engineering, presents an opportunity to produce highly luminescent Er-doped LN photonic integrated devices and circuits for quantum and nanophotonic applications at telecom wavelengths.
Rare earth ions are known as promising candidates for building quantum light-matter interface. However, tunable photonic cavity access to rare earth ions in their desired host crystal remains challenging. Here, we demonstrate the integration of erbium doped yttrium orthosilicate (Er3+:Y2SiO5) with thin-film lithium niobate photonic circuit by plasma-activated direct flip chip bonding. Resonant coupling to erbium ions is realized by on-chip electro-optically tuned high Q lithium niobate micro-ring resonators. Fluorescence and absorption of erbium ions at 1536.48 nm are measured in the waveguides, while the collective ion-cavity cooperativity with micro-ring resonators is assessed to be 0.36. This work presents a versatile scheme for future rare earth ion integrated quantum devices.