Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physical Review E

Modified spontaneous emission from a two-dimensional photonic crystal

Yong Zeng, Xiaoshuang Chen, Wei Lü

Published Oct 5, 2004• 15 citations
Publisher

Abstract

Decay kinetic properties of a two-level atom near the band edges of a two-dimensional photonic crystal are studied based on the Green's function expression for the evolution operator. Our calculations show that the decay kinetics can be controlled by changing the atomic parameters. We also find that there is a quite wide lifetime distribution in the spontaneous emission process.

DOI
10.1103/physreve.70.047601

Related papers

Photonic band gap effects on spontaneous emission lifetimes of an assembly of atoms in two-dimensional photonic crystals

Yun-Song Zhou, Xuehua Wang, Ben–Yuan Gu +1 more

The lifetime distribution functions of the spontaneous emission (SE) of the excited atoms embedded in two-dimensional (2D) photonic crystals (PCs) with square lattice, consisting of square air rods in dielectric medium with different filling factors, are calculated by using the plane wave expansion method. The numerical results show that the SE in the 2D PCs cannot be prohibited completely but it can be inhibited intensively by the pseudo-PBG of the PCs. In the pseudoband edges, the SE is accelerated obviously. The reduced average lifetime of the excited atoms and the extension of the reduced lifetime distribution in the 2D PCs both are the same as those in the 3D PCs in the order of magnitude. Our results provide an available way to control the behavior of the SE by changing the structures of the 2D PCs.

Physical Review E•Jul 15, 2005•12 citations

Decay Kinetic Properties of Atoms in Photonic Crystals with Absolute Gaps

Xuehua Wang, Ben–Yuan Gu, Rongzhou Wang +1 more

Decay kinetic properties of a two-level atom near the band edges of photonic crystals (PCs) with absolute gaps are studied based on the Green's function expression for the evolution operator. The local coupling strength between the photons and an atom is evaluated by an exact numerical method. It is found that the decay behavior of an excited atom can be fundamentally changed by the variation of the atomic position: Weisskopf-Wigner and non-Weisskopf-Wigner decay phenomena occur at different atomic positions in the PCs as a result of a significant difference in the local coupling strength. Our finding implies that it is possible to engineer the luminescence spectrum by controlling the atomic position.

Physical Review Letters•Sep 12, 2003•92 citations

Spontaneous emission of a two-level atom in photonic crystals

Lingjiang Yao, Jingcui Peng, Hongjian Li +6 more

We investigate spontaneous emission from a two-level atom embedded in photonic crystals. Due to the photon localization and the quantum interference between the two dressed states, some changes of the radiation field happen, and the energy is transferred among the excited atom, the localized field, the propagating field and the diffusion field. If there is a localized field, it appears quasi-oscillation behaves of the population evolution in the excited level. If there isn't a localized field, it appears no quasi-oscillation. Moreover, there have some steady-state trapped atom populations in the excited level, and the spontaneous emission spectrum near the forbidden gap edge is different from that in the vacuum. All these characteristics depend not only on the relative position of the excited level from the band-edge but also on the photon density of states (or the band-edge smoothing parameter) near the band edge.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•May 12, 2004•0 citations

Spontaneous emission from a two-level atom in a dynamic photonic crystal with an isotropic disoersion relation

Xing Rong, Xie Shuang-Yuan, Xu Jing-Ping +1 more

The spontaneous emission of a two-level atom, located in an isotropic photonic crystal with dynamically modulated photonic band edge, has been studied. When the photonic band edge is modulated with step functions or triangle functions, the evolution of atomic population on the upper level has been discussed. When the photonic band edge is modulated with step functions, the dynamics of atomic population depends not only on the detuning value of the atomic transition frequency from the band edge, but also on the time point of stepping. With the different time point of stepping, the dynamics of atomic population after stepping is different. When the photonic band edge is modulated with triangle functions, the atomic population oscillates quasi-periodically while decaying in general. The oscillation frequency, peak and valley values, and the decaying rate of oscillation can be modulated by choosing the frequency and initial phase of triangle functions.

Acta Physica Sinica•Jan 1, 2014•3 citations

Spontaneous emission from a two-level atom embedded in two-band three-dimensional photonic crystals

San Chen, Xie Shang-Yuan, Yang Ya-Ping +2 more

We have studied the properties of the spontaneous emission from a two-level atom embedded in two-band photonic crystals. Due to the anisotropic two-band dispersion relation, the localized and propagating fields cannot coexist, this leads to the non-quasi-oscillation behaviour of the upper level population. Thus the upper level population will tend to a constant as time goes to infinity, or decay with time in a power law, or decay with time exponentially, different from that in the isotropic one-band dispersion relation case. These properties are directly related to the relative position of the upper level from the band edge and the width of the gap.

Acta Physica Sinica•Jan 1, 2003•3 citations

Spontaneous Emission from a Two-level Atom in Photonic Crystals

Feng Lin

Spontaneous emission from a two-level atom embedded in photonic crystals was investigated in this paper. Due to the photon localization and the quantum interference between the two dressed states, some changes in the radiation field take place: when the excited level moves from the gap to the band, the energy of the localized field is transferred to the propagating field through the diffusion field. If the localized field and the propagating field could coexist, the population evolution in the excited level would exhibit quasi-oscillation behavior. If they could not coexist, there would be no quasi-oscillation. The steady-state trapped atom population in the excited level is changed also. All these characteristics depend not only on the relative position δ of the excited level ω _1 with respect to the band-edge ω _c but also on the photon density of states ρ(ω_k) (or the band-edge smoothing parameter e ) near the band edge.

光谱学与光谱分析•Jan 1, 2003•0 citations
Decay kinetic properties of a two-level atom near the band edges of a two-dimensional photonic crystal are studied based on the Green's function expression for the evolution operator. Our calculations show that the decay kinetics can be controlled by changing the atomic parameters. We also find that there is a quite wide lifetime distribution in the spontaneous emission process.
The lifetime distribution functions of the spontaneous emission (SE) of the excited atoms embedded in two-dimensional (2D) photonic crystals (PCs) with square lattice, consisting of square air rods in dielectric medium with different filling factors, are calculated by using the plane wave expansion method. The numerical results show that the SE in the 2D PCs cannot be prohibited completely but it can be inhibited intensively by the pseudo-PBG of the PCs. In the pseudoband edges, the SE is accelerated obviously. The reduced average lifetime of the excited atoms and the extension of the reduced lifetime distribution in the 2D PCs both are the same as those in the 3D PCs in the order of magnitude. Our results provide an available way to control the behavior of the SE by changing the structures of the 2D PCs.
Decay kinetic properties of a two-level atom near the band edges of photonic crystals (PCs) with absolute gaps are studied based on the Green's function expression for the evolution operator. The local coupling strength between the photons and an atom is evaluated by an exact numerical method. It is found that the decay behavior of an excited atom can be fundamentally changed by the variation of the atomic position: Weisskopf-Wigner and non-Weisskopf-Wigner decay phenomena occur at different atomic positions in the PCs as a result of a significant difference in the local coupling strength. Our finding implies that it is possible to engineer the luminescence spectrum by controlling the atomic position.
We investigate spontaneous emission from a two-level atom embedded in photonic crystals. Due to the photon localization and the quantum interference between the two dressed states, some changes of the radiation field happen, and the energy is transferred among the excited atom, the localized field, the propagating field and the diffusion field. If there is a localized field, it appears quasi-oscillation behaves of the population evolution in the excited level. If there isn't a localized field, it appears no quasi-oscillation. Moreover, there have some steady-state trapped atom populations in the excited level, and the spontaneous emission spectrum near the forbidden gap edge is different from that in the vacuum. All these characteristics depend not only on the relative position of the excited level from the band-edge but also on the photon density of states (or the band-edge smoothing parameter) near the band edge.
The spontaneous emission of a two-level atom, located in an isotropic photonic crystal with dynamically modulated photonic band edge, has been studied. When the photonic band edge is modulated with step functions or triangle functions, the evolution of atomic population on the upper level has been discussed. When the photonic band edge is modulated with step functions, the dynamics of atomic population depends not only on the detuning value of the atomic transition frequency from the band edge, but also on the time point of stepping. With the different time point of stepping, the dynamics of atomic population after stepping is different. When the photonic band edge is modulated with triangle functions, the atomic population oscillates quasi-periodically while decaying in general. The oscillation frequency, peak and valley values, and the decaying rate of oscillation can be modulated by choosing the frequency and initial phase of triangle functions.
We have studied the properties of the spontaneous emission from a two-level atom embedded in two-band photonic crystals. Due to the anisotropic two-band dispersion relation, the localized and propagating fields cannot coexist, this leads to the non-quasi-oscillation behaviour of the upper level population. Thus the upper level population will tend to a constant as time goes to infinity, or decay with time in a power law, or decay with time exponentially, different from that in the isotropic one-band dispersion relation case. These properties are directly related to the relative position of the upper level from the band edge and the width of the gap.
Spontaneous emission from a two-level atom embedded in photonic crystals was investigated in this paper. Due to the photon localization and the quantum interference between the two dressed states, some changes in the radiation field take place: when the excited level moves from the gap to the band, the energy of the localized field is transferred to the propagating field through the diffusion field. If the localized field and the propagating field could coexist, the population evolution in the excited level would exhibit quasi-oscillation behavior. If they could not coexist, there would be no quasi-oscillation. The steady-state trapped atom population in the excited level is changed also. All these characteristics depend not only on the relative position δ of the excited level ω _1 with respect to the band-edge ω _c but also on the photon density of states ρ(ω_k) (or the band-edge smoothing parameter e ) near the band edge.