Spin-photon interfaces are essential for communications between distant spin qubits in quantum technologies, but the interband optical excitation can also damp electrically driven hole-spin Rabi oscillations in semiconductor self-assembled quantum dots (SAQDs). We report a device-level modeling workflow that integrates realistic SAQD geometry and multiband electronic-structure analysis with models of electrically driven spin control, interband optical transitions, and open-system dynamics. This workflow enables device-level estimation of Rabi-oscillation damping arising from repeated interband absorption-emission cycles. As an example, for a gated GaAs SAQD subjected to a uniform magnetic field $B_0$ along the growth direction of the SAQD, we predict the Rabi frequency of the hole spin qubit and its damping under external illumination. At $B_0=2$ T, the calculations yield a hole-spin Rabi frequency of 37.3 MHz. When the electrically driven SAQD is illuminated by a broadband LED centered at a wavelength of 790 nm, increasing the optical power from 0.3 to 1.5 mW shortens the Rabi-oscillation decay time from 90.3 to 17.5 ns. Increasing the SAQD height reduces the electron-hole overlap and thus the emission rate, but the resulting redshift moves the interband transitions into stronger spectral overlap with the LED spectrum, thereby increasing the rate of repeated absorption-emission cycles and enhancing photon-induced Rabi-oscillation damping. The results show that geometry, spin-control conditions, and illumination spectrum should be co-optimized in semiconductor spin-photon devices.Spin-photon interfaces are essential for communications between distant spin qubits in quantum technologies, but the interband optical excitation can also damp electrically driven hole-spin Rabi oscillations in semiconductor self-assembled quantum dots (SAQDs). We report a device-level modeling workflow that integrates realistic SAQD geometry and multiband electronic-structure analysis with models of electrically driven spin control, interband optical transitions, and open-system dynamics. This workflow enables device-level estimation of Rabi-oscillation damping arising from repeated interband absorption-emission cycles. As an example, for a gated GaAs SAQD subjected to a uniform magnetic field $B_0$ along the growth direction of the SAQD, we predict the Rabi frequency of the hole spin qubit and its damping under external illumination. At $B_0=2$ T, the calculations yield a hole-spin Rabi frequency of 37.3 MHz. When the electrically driven SAQD is illuminated by a broadband LED centered at a wavelength of 790 nm, increasing the optical power from 0.3 to 1.5 mW shortens the Rabi-oscillation decay time from 90.3 to 17.5 ns. Increasing the SAQD height reduces the electron-hole overlap and thus the emission rate, but the resulting redshift moves the interband transitions into stronger spectral overlap with the LED spectrum, thereby increasing the rate of repeated absorption-emission cycles and enhancing photon-induced Rabi-oscillation damping. The results show that geometry, spin-control conditions, and illumination spectrum should be co-optimized in semiconductor spin-photon devices.

cond-mat.mes-hallCross-listedarXiv:2608.08475Aug 11, 2026

Field induced optical transitions in semiconductor quantum wells

Ikonić, Z., Milanović, V.

Jan 1, 19870 citations

Interband coherence in semiconductors; excitons and beyond

J. M. Hvam, D. Birkedal, Vygantas Mizeikis +1 more

Journal of LuminescenceJun 1, 19973 citations

Quantum Information Processing with Semiconductor Macroatoms

Eliana Biolatti, Rita Claudia Iotti, Paolo Zanardi A +1 more

An all optical implementation of quantum information processing with semiconductor macroatoms is proposed. Our quantum hardware consists of an array of quantum dots and the computational degrees of freedom are energy-selected interband optical transitions. The quantum-computing strategy exploits exciton-exciton interactions driven by ultrafast multicolor laser pulses. Contrary to existing proposals based on charge excitations, our approach does not require time-dependent electric fields, thus allowing for a subpicosecond, decoherence-free, operation time scale in realistic semiconductor nanostructures.An all optical implementation of quantum information processing with semiconductor macroatoms is proposed. Our quantum hardware consists of an array of quantum dots and the computational degrees of freedom are energy-selected interband optical transitions. The quantum-computing strategy exploits exciton-exciton interactions driven by ultrafast multicolor laser pulses. Contrary to existing proposals based on charge excitations, our approach does not require time-dependent electric fields, thus allowing for a subpicosecond, decoherence-free, operation time scale in realistic semiconductor nanostructures.

arXiv:quant-ph/0007034Physical Review LettersDec 25, 2000475 citations

The Calculation of Optical Transition Probabilities

M. G. Veselov

Jan 1, 19620 citations

B_0

along the growth direction of the SAQD, we predict the Rabi frequency of the hole spin qubit and its damping under external illumination. At

B_0=2

T, the calculations yield a hole-spin Rabi frequency of 37.3 MHz. When the electrically driven SAQD is illuminated by a broadband LED centered at a wavelength of 790 nm, increasing the optical power from 0.3 to 1.5 mW shortens the Rabi-oscillation decay time from 90.3 to 17.5 ns. Increasing the SAQD height reduces the electron-hole overlap and thus the emission rate, but the resulting redshift moves the interband transitions into stronger spectral overlap with the LED spectrum, thereby increasing the rate of repeated absorption-emission cycles and enhancing photon-induced Rabi-oscillation damping. The results show that geometry, spin-control conditions, and illumination spectrum should be co-optimized in semiconductor spin-photon devices.