Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
Direct observation of slow light in the noise spectrum of a laser
Abdelkrim El Amili, B.-X. Miranda, Fabienne Goldfarb, Ghaya Baili, G. Beaudoin, Isabelle Sagnes, Fabien Bretenaker, Mehdi Alouini
Abstract
Coherent population oscillations (CPO), an ubiquitous mechanism inducing slow and fast light (SFL), is present in any active medium provided that a strong optical beam saturates this medium. Thus, CPO must be present in any single frequency laser since the oscillating beam acts as a strong pump which saturates the active medium. This effect could be observed using an external probe whose angular frequency is detuned with respect to the oscillating mode, by less than the inverse of the population inversion lifetime. This effect should be visible in the laser excess noise, using the spontaneous emission present in the non-lasing side longitudinal modes of a single-frequency laser as probe of the CPO effect. Class-A vertical external cavity surface emitting semiconductor lasers (VECSELs) [1] recently developed for their low noise characteristics make them perfectly suited for the observation of CPO induced SFL in their noise spectrum. The single-frequency laser used in our experiment is a VECSEL which operates at ∼ 1 µm. We focus on the excess noise due to the beat notes between the laser line and the spontaneous emission noise at neighboring longitudinal mode frequencies [2,3]. At the pthFSR frequency pΔ, the noise spectrum is thus the sum of two Lorentzian peaks due to the beat notes of the lasing mode with the corresponding sidebands (pthand −pthmodes). When the pumping rate is increased, we found experimentally that the excess noise consists of two peaks separated by δf = fp− f−p∼ 100 kHz (inset of Fig.1(a)). This frequency shift is given by: δf ≈ ν0Lmover L+n0Lm(δnp+δn−p), where n0 is the bulk refractive index of the semiconductor structure, L and Lmare the length of the cavity and the gain medium respectively. δn±pare the modifications of the refractive index of the structure experienced by the ±p side modes and induced by the dispersion associated with the CPO effect. In a semiconductor active medium, thanks to the Bogatov effect [4], the dispersion is not an odd function of the frequency detuning with respect to ½0. Thus, δnp≠ −δn−pand the two beat note frequencies fpand f−pcorresponding to the p and −p modes occur at slightly different frequencies, as evidenced by the double peak of Fig.1(a). This CPO induced index modification can be derived from the gain medium rate equation including the phase-intensity coupling coefficient α (Henry's factor) that is responsible for the Bogatov effect. This CPO effect is also responsible for the modification of the refractive index seen by the side modes which modifies the round-trip phase accumulated by each side mode Fig.1(b). Notice also that since the cavity FSR Δ is sufficiently large that we are probe the wings of the dispersion profile of Fig.1(b), i. e., in the slow light regime. In conclusion, we experimentally evidenced the existence of intracavity slow light effects in a laser induced by the CPO mechanism. These effects are probed by the laser spontaneous emission noise present in the non lasing modes.